硅基GaN功率MISFET新結構研究
發(fā)布時間：2018-11-06 07:01
【摘要】：由于GaN能和AlGaN等多元合金形成異質結并在異質結界面形成高遷移率的二維電子氣(2DEG)且具有高禁帶寬度,所以第三代半導體GaN異質結器件在高功率、高頻應用中具有極大優(yōu)勢而受到了廣泛研究。為了更好地兼容傳統(tǒng)硅器件工藝平臺而降低成本,硅基氮化鎵(GaN-on-Si)增強型AlGaN/GaN功率金屬絕緣層半導體場效應晶體管(MISFET)是目前研究的重點。為了解決傳統(tǒng)增強型器件過度依賴精確度不高的干法刻蝕工藝這一問題,本文圍繞設計結構、構造模型、仿真優(yōu)化三個方面對硅基GaN功率MISFET新結構進行了研究,主要內容如下:(1)分析傳統(tǒng)增強型AlGaN/GaN功率MISFET實現(xiàn)方法,對利用凹槽柵、p帽層、F離子處理等實現(xiàn)增強型性能的手段進行討論,針對一種解決了批量生產閾值穩(wěn)定性差、亞閾區(qū)斜率過高等問題且避免了使用難以激活的p型材料的新型柵調制金屬-二維電子氣隧穿器件進行了細致分析。(2)為了解決傳統(tǒng)異質結器件的缺陷,以及進一步地優(yōu)化柵調制隧穿器件性能,首先,本文提出并詳細研究了側槽柵隧穿場效應管(SG-TFET)新結構,其次,沿著SG-TFET的思路提出了淺場板集成柵(SFG)技術與一種配套的高溫快速刻蝕制備工藝,并在此基礎上提出了淺場板集成柵場效應管(SFG-FET)、半槽型陽極整流器(SHA-FER)等新結構,另外,通過SFG技術也提出了一種新型伽馬型陽極肖特基陽極二極管(GA-SBD),實現(xiàn)了超低開啟電壓與高阻斷特性的結合。本文通過數(shù)學物理方法深入分析并細致仿真了這幾種全新的增強型器件結構,對其電流輸運機理進行了細致探討,建立了SG-TFET、SFG-FET與GA-SBD的電流電壓模型,證明了這幾類器件中的三極管具有低亞閾區(qū)擺幅,而所有新器件均具有凹槽工藝的高度容錯性(或完全避免了凹槽刻蝕),且具有高電流輸運能力、有功能集成等特點。
[Abstract]:Because GaN can form heterojunction with multicomponent alloys such as AlGaN and high mobility two-dimensional electron gas (2DEG) is formed on the heterojunction surface, and has high band gap, the third generation semiconductor GaN heterojunction devices have high power. High-frequency applications have great advantages and have been widely studied. In order to be more compatible with the traditional silicon device technology platform and reduce the cost, the silicon based gallium nitride (GaN-on-Si) enhanced AlGaN/GaN power metal insulating semiconductor field effect transistor (MISFET) is the focus of current research. In order to solve the problem that the traditional enhanced device is too dependent on the dry etching process with low precision, the new structure of silicon based GaN power MISFET is studied in this paper from three aspects: design structure, model construction and simulation optimization. The main contents are as follows: (1) the traditional enhanced AlGaN/GaN power MISFET implementation method is analyzed, and the methods to realize the enhanced performance, such as groove gate, p-cap layer and F ion treatment, are discussed. In order to solve the problem of low threshold stability in batch production, In order to solve the defects of traditional heterojunction devices, a novel gate modulated metal-two-dimensional electron-gas tunneling device, which is characterized by high sub-threshold slope and avoiding the difficult to activate p-type material, is analyzed in detail. (2) in order to solve the defects of traditional heterojunction devices, a novel gate modulation metal-two-dimensional electron gas tunneling device is analyzed in detail. And further optimize the performance of gate modulation tunneling devices. Firstly, a new structure of side-grooved gate tunneling field effect transistors (SG-TFET) is proposed and studied in detail. Along with the idea of SG-TFET, the technology of shallow field integrated gate (SFG) and a matching high temperature rapid etching process are proposed. On the basis of this, a shallow field plate integrated gate field effect transistor (SFG-FET) is proposed. In addition, a new gamma-ray anode Schottky anode diode (GA-SBD) is proposed by SFG technology, which combines ultra-low opening voltage with high blocking characteristics. This paper analyzes and simulates these new enhanced device structures by mathematical and physical methods, discusses the mechanism of current transport, and establishes the current and voltage models of SG-TFET,SFG-FET and GA-SBD. It is proved that the transistor of these kinds of devices has low subthreshold swing, and all the new devices have the characteristics of high fault-tolerant (or completely avoiding groove etching), high current transport ability and functional integration.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
本文編號：2313498
[Abstract]:Because GaN can form heterojunction with multicomponent alloys such as AlGaN and high mobility two-dimensional electron gas (2DEG) is formed on the heterojunction surface, and has high band gap, the third generation semiconductor GaN heterojunction devices have high power. High-frequency applications have great advantages and have been widely studied. In order to be more compatible with the traditional silicon device technology platform and reduce the cost, the silicon based gallium nitride (GaN-on-Si) enhanced AlGaN/GaN power metal insulating semiconductor field effect transistor (MISFET) is the focus of current research. In order to solve the problem that the traditional enhanced device is too dependent on the dry etching process with low precision, the new structure of silicon based GaN power MISFET is studied in this paper from three aspects: design structure, model construction and simulation optimization. The main contents are as follows: (1) the traditional enhanced AlGaN/GaN power MISFET implementation method is analyzed, and the methods to realize the enhanced performance, such as groove gate, p-cap layer and F ion treatment, are discussed. In order to solve the problem of low threshold stability in batch production, In order to solve the defects of traditional heterojunction devices, a novel gate modulated metal-two-dimensional electron-gas tunneling device, which is characterized by high sub-threshold slope and avoiding the difficult to activate p-type material, is analyzed in detail. (2) in order to solve the defects of traditional heterojunction devices, a novel gate modulation metal-two-dimensional electron gas tunneling device is analyzed in detail. And further optimize the performance of gate modulation tunneling devices. Firstly, a new structure of side-grooved gate tunneling field effect transistors (SG-TFET) is proposed and studied in detail. Along with the idea of SG-TFET, the technology of shallow field integrated gate (SFG) and a matching high temperature rapid etching process are proposed. On the basis of this, a shallow field plate integrated gate field effect transistor (SFG-FET) is proposed. In addition, a new gamma-ray anode Schottky anode diode (GA-SBD) is proposed by SFG technology, which combines ultra-low opening voltage with high blocking characteristics. This paper analyzes and simulates these new enhanced device structures by mathematical and physical methods, discusses the mechanism of current transport, and establishes the current and voltage models of SG-TFET,SFG-FET and GA-SBD. It is proved that the transistor of these kinds of devices has low subthreshold swing, and all the new devices have the characteristics of high fault-tolerant (or completely avoiding groove etching), high current transport ability and functional integration.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
【參考文獻】
相關碩士學位論文 前1條
1 李建;三維增強型AlGaN/GaN HEMT的仿真分析[D];電子科技大學;2016年
，本文編號：2313498
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