發(fā)布時間：2018-11-03 13:14

【摘要】：由In Ga As材料制備的短波紅外探測器因其具有成本低、靈敏度高、可靠性高等特點,被廣泛應(yīng)用于工業(yè)、醫(yī)療和軍事領(lǐng)域。近些年,由于材料生長和制備工藝的快速發(fā)展,各個領(lǐng)域?qū)n Ga As焦平面陣列(FPA)的性能要求和需求越來越高。串音是影響焦平面陣列的成像性能的關(guān)鍵性因素,因此,In Ga As焦平面陣列的串音研究越來越受到人們關(guān)注。在本文的前半部分,我們首先系統(tǒng)地介紹了在模擬中用到的理論模型公式,我們在模擬中使用了泊松方程、載流子連續(xù)性方程、傳輸方程和產(chǎn)生-復(fù)合理論模型等經(jīng)典的公式模型。然后,為了驗證理論模型的合理性,我們模擬了In Ga As焦平面陣列的量子效率。在得到了量子效率正確結(jié)果的基礎(chǔ)上,我們分析了暗電流與探測器結(jié)構(gòu)、吸收層厚度、摻雜濃度的變化關(guān)系,定量地給出了In0.53Ga0.47As/In P PIN探測器的p-i結(jié)的耗盡層厚度值和n-i結(jié)的耗盡層厚度值,以及兩者的電勢分布情況。結(jié)果表明:平面結(jié)構(gòu)的暗電流小于臺面結(jié)構(gòu);在我們設(shè)計的結(jié)構(gòu)下,在吸收層厚度小于1.5?m時,暗電流隨著吸收層厚度的增加而增大,而當(dāng)吸收層厚度大于1.5?m時,暗電流將趨于穩(wěn)定,不再變動;In Ga As探測器的暗電流在吸收層低摻雜時,隨著摻雜濃度的增大而減小;p-i結(jié)的耗盡層的寬度和分壓能力比n-i結(jié)的耗盡層要大,并得到結(jié)論:在進行In0.53Ga0.47As/In P PIN探測器的理論分析時,n-i結(jié)相對于p-i結(jié)可以忽略。在本文的后半部分,我們進一步地,定量計算了In0.53Ga0.47As/In P探測器焦平面陣列的電串音與光波波長、入射方向和臺面的刻蝕深度的變化關(guān)系。結(jié)果顯示:臺面結(jié)構(gòu)器件的電串音抑制性能比平面結(jié)構(gòu)的要好;由于材料吸收深度和異質(zhì)結(jié)耗盡層寬度的影響,短波長入射光的電串音比長波長要小,正照射光的串音比背照射光要小;此外,當(dāng)臺面結(jié)構(gòu)的刻蝕深度穿透吸收層時,其電串?dāng)_幾乎完全被抑制。研究結(jié)果提出了相應(yīng)的In Ga As FPA的低串音設(shè)計。除了以上內(nèi)容,本文還對Vis-SWIR In Ga As探測器的量子效率和上海技術(shù)物理研究所的兩個測量串音的實驗進行了模擬。
[Abstract]:The short-wave infrared detectors prepared from In Ga As materials have been widely used in industrial, medical and military fields because of their low cost, high sensitivity and high reliability. In recent years, due to the rapid development of material growth and preparation technology, the performance requirements and requirements of In Ga As focal plane array (FPA) are becoming higher and higher in various fields. Crosstalk is a key factor affecting the imaging performance of focal plane arrays (FPAs), so the crosstalk of, In Ga As focal plane arrays (FPAs) has attracted more and more attention. In the first half of this paper, we first systematically introduce the theoretical model formulas used in the simulation, we use the Poisson equation, the carrier continuity equation, Classical formula models such as transmission equation and generation-composite theory model. Then, in order to verify the rationality of the theoretical model, we simulate the quantum efficiency of In Ga As focal plane arrays. Based on the correct results of quantum efficiency, we analyze the relationship between the dark current and the structure of the detector, the thickness of the absorption layer, and the doping concentration. The depletion layer thickness of p-i junction and the depletion layer thickness of n-i junction of In0.53Ga0.47As/In P PIN detector are quantitatively given, as well as their potential distribution. The results show that the dark current of planar structure is smaller than that of Mesa structure. When the thickness of the absorption layer is less than 1.5 m, the dark current increases with the increase of the thickness of the absorption layer, but when the thickness of the absorption layer is greater than 1.5 m, the dark current will be stable and will not change. When the absorption layer is low, the dark current of In Ga As detector decreases with the increase of doping concentration. The depletion layer width and partial pressure capacity of p-i junction are larger than that of n-i junction. It is concluded that the n-i junction can be neglected relative to p-i junction in the theoretical analysis of the In0.53Ga0.47As/In P PIN detector. In the second half of this paper, we further quantitatively calculate the relationship between electric crosstalk and wavelength, incident direction and etching depth of In0.53Ga0.47As/In P detector focal plane array. The results show that the crosstalk suppression performance of Mesa structure is better than that of planar structure. Due to the influence of material absorption depth and heterojunction depletion layer width, the electric crosstalk of short wavelength incident light is smaller than that of long wavelength, and the crosstalk of positive beam is smaller than that of backlit light. In addition, when the etching depth of the Mesa structure penetrates the absorption layer, its crosstalk is almost completely suppressed. The results show that the corresponding low crosstalk design of In Ga As FPA is proposed. In addition to the above, the quantum efficiency of Vis-SWIR In Ga As detector and two experiments of measuring crosstalk in Shanghai Institute of Technical Physics are simulated.
【學(xué)位授予單位】：上海交通大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN215

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本文編號：2307892