超高壓4H-SiC GTO晶閘管的結(jié)構(gòu)優(yōu)化設(shè)計(jì)
發(fā)布時(shí)間：2018-11-02 12:28
【摘要】：雖然Si晶閘管已成功應(yīng)用多年,但是它的耐壓和dv/dt、di/dt耐量已逐漸逼近Si材料的物理極限,僅依靠Si晶閘管的結(jié)構(gòu)設(shè)計(jì)和制造工藝的優(yōu)化來進(jìn)一步提高單個(gè)晶閘管的耐壓潛力已十分有限。隨著SiC體材料的發(fā)展成熟,以SiC材料替代常規(guī)的Si材料,開發(fā)SiC晶閘管越來越引起人們的關(guān)注。為此,本文采用軟件仿真方法,以20kVSiC門極可關(guān)斷晶閘管(GTO)為例,開展超高壓SiC p-GTO晶閘管結(jié)構(gòu)設(shè)計(jì)與優(yōu)化研究工作,研究器件的開通機(jī)制以及溫度和少子壽命對器件性能的影響。主要研究內(nèi)容和結(jié)論為:1.進(jìn)行了 20kV SiC GTO晶閘管的設(shè)計(jì)和優(yōu)化。采用n+-SiC襯底外延形成的p/n/p/p/n穿通型器件結(jié)構(gòu)進(jìn)行優(yōu)化,優(yōu)化結(jié)果為,p長基區(qū)的濃度和厚度分別為2×1014cm-3和160μm; P長基區(qū)和襯底間p+緩沖層的濃度和厚度分別為5×1017cm-3和1.5μm;其他外延層結(jié)構(gòu)參數(shù)分別為:p+發(fā)射區(qū) (濃度5×1019cm-3,厚度3.0μm,橫向長度30μm)、n短基區(qū) (濃度 2×1017cm-3,厚度 1.5 μm)和 n+襯底(濃度 2×1019cm-3 厚度 350 μ m)。2.研究了碳化硅GTO晶閘管的開通過程。與硅GTO晶閘管的擴(kuò)展時(shí)間遠(yuǎn)遠(yuǎn)大于延遲時(shí)間不同,碳化硅GTO晶閘管的延遲時(shí)間和擴(kuò)展時(shí)間屬于同一納秒數(shù)量級;SiCGTO晶閘管的擴(kuò)展速度(1.64×104cm/s)遠(yuǎn)大于硅GTO晶閘管的擴(kuò)展速度(1×104cm/s),約為1.64倍;SiCGTO晶閘管的擴(kuò)展是受漂移和擴(kuò)散共同作用的。3.完成了溫度、壽命對SiCGTO晶閘管特性影響的研究。溫度升高,碳化硅GTO晶閘管的正向阻斷電壓略微下降,而且在600K的高溫下依然處于正向阻斷模式,無自觸發(fā)現(xiàn)象。溫度從300K升高到600K,正向壓降(@IAK=100A/cm2)約降低0.42V。溫度從300K升高到500K,開通時(shí)間降低約38ns,關(guān)斷時(shí)間增加約78ns。常溫下,長基區(qū)的少子壽命由1μs增加到5 μs,正向壓降降低顯著,當(dāng)少子壽命大于5μs后,正向壓降基本不變;因此,對于20kVSiCGTO晶閘管,要獲得較低的正向壓降,長基區(qū)少子壽命應(yīng)不低于5μs。
[Abstract]:Although Si thyristors have been successfully used for many years, their voltage resistance and dv/dt,di/dt tolerance have gradually approached the physical limit of Si materials. It is very limited to improve the voltage resistance of single thyristor only by optimizing the structure design and manufacturing process of Si thyristor. With the development and maturity of SiC materials, the development of SiC thyristors with SiC instead of conventional Si materials has attracted more and more attention. In this paper, a software simulation method is used to study the structure design and optimization of 20kVSiC gate turn-off thyristor (GTO). The on-off mechanism and the effects of temperature and minority carrier lifetime on the device performance are studied. The main contents and conclusions are as follows: 1. The design and optimization of 20kV SiC GTO thyristor are carried out. The structure of p/n/p/n perforated devices formed by n SiC substrate epitaxy is optimized. The results show that the concentration and thickness of p-long base region are 2 脳 1014cm-3 and 160 渭 m, respectively. The concentration and thickness of P buffer layer in the long base region and between the substrates are 5 脳 1017cm-3 and 1. 5 渭 m, respectively. The other structural parameters of the epitaxial layer are: p-emitting region (concentration 5 脳 1019cm-3, thickness 3.0 渭 m), transverse length 30 渭 m), n short base region (concentration 2 脳 1017cm-3, thickness 1.5 渭 m) and n substrate (concentration 2 脳 1019cm-3 thickness 350 渭 m). 2). The turn-on process of silicon carbide GTO thyristor is studied. The delay time and expansion time of silicon GTO thyristor are of the same nanosecond order, which is different from that of silicon GTO thyristor. The expansion speed of SiCGTO thyristor (1.64 脳 104cm/s) is much higher than that of silicon GTO thyristor (1 脳 104cm/s), which is about 1.64 times, and that of SiCGTO thyristor is affected by drift and diffusion. The effects of temperature and lifetime on the characteristics of SiCGTO thyristor were studied. With the increase of temperature, the forward blocking voltage of silicon carbide GTO thyristor decreases slightly, and it is still in the forward blocking mode at 600K high temperature, and there is no self-triggering phenomenon. When the temperature increases from 300K to 600K, the forward pressure drop (@ IAK=100A/cm2) decreases about 0.42V. When the temperature rises from 300K to 500K, the opening time decreases about 38ns, and the turn-off time increases about 78ns. At room temperature, the minority carrier lifetime in the long base region increases from 1 渭 s to 5 渭 s, and the forward pressure drop decreases significantly. When the minority carrier lifetime is greater than 5 渭 s, the forward pressure drop is basically unchanged. Therefore, for 20kVSiCGTO thyristors, in order to obtain lower forward pressure drop, the minority carrier lifetime in the long base region should not be less than 5 渭 s.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN34
本文編號：2306014
[Abstract]:Although Si thyristors have been successfully used for many years, their voltage resistance and dv/dt,di/dt tolerance have gradually approached the physical limit of Si materials. It is very limited to improve the voltage resistance of single thyristor only by optimizing the structure design and manufacturing process of Si thyristor. With the development and maturity of SiC materials, the development of SiC thyristors with SiC instead of conventional Si materials has attracted more and more attention. In this paper, a software simulation method is used to study the structure design and optimization of 20kVSiC gate turn-off thyristor (GTO). The on-off mechanism and the effects of temperature and minority carrier lifetime on the device performance are studied. The main contents and conclusions are as follows: 1. The design and optimization of 20kV SiC GTO thyristor are carried out. The structure of p/n/p/n perforated devices formed by n SiC substrate epitaxy is optimized. The results show that the concentration and thickness of p-long base region are 2 脳 1014cm-3 and 160 渭 m, respectively. The concentration and thickness of P buffer layer in the long base region and between the substrates are 5 脳 1017cm-3 and 1. 5 渭 m, respectively. The other structural parameters of the epitaxial layer are: p-emitting region (concentration 5 脳 1019cm-3, thickness 3.0 渭 m), transverse length 30 渭 m), n short base region (concentration 2 脳 1017cm-3, thickness 1.5 渭 m) and n substrate (concentration 2 脳 1019cm-3 thickness 350 渭 m). 2). The turn-on process of silicon carbide GTO thyristor is studied. The delay time and expansion time of silicon GTO thyristor are of the same nanosecond order, which is different from that of silicon GTO thyristor. The expansion speed of SiCGTO thyristor (1.64 脳 104cm/s) is much higher than that of silicon GTO thyristor (1 脳 104cm/s), which is about 1.64 times, and that of SiCGTO thyristor is affected by drift and diffusion. The effects of temperature and lifetime on the characteristics of SiCGTO thyristor were studied. With the increase of temperature, the forward blocking voltage of silicon carbide GTO thyristor decreases slightly, and it is still in the forward blocking mode at 600K high temperature, and there is no self-triggering phenomenon. When the temperature increases from 300K to 600K, the forward pressure drop (@ IAK=100A/cm2) decreases about 0.42V. When the temperature rises from 300K to 500K, the opening time decreases about 38ns, and the turn-off time increases about 78ns. At room temperature, the minority carrier lifetime in the long base region increases from 1 渭 s to 5 渭 s, and the forward pressure drop decreases significantly. When the minority carrier lifetime is greater than 5 渭 s, the forward pressure drop is basically unchanged. Therefore, for 20kVSiCGTO thyristors, in order to obtain lower forward pressure drop, the minority carrier lifetime in the long base region should not be less than 5 渭 s.
【學(xué)位授予單位】：西安理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN34
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