【摘要】：大功率射頻振蕩器可以將直流能量轉(zhuǎn)化為大功率射頻能量,廣泛應(yīng)用于工業(yè)、醫(yī)學(xué)、軍事、科研等眾多領(lǐng)域。射頻功率振蕩器作為構(gòu)成射頻功率電源的核心技術(shù),應(yīng)用在等離子激發(fā)、激光激發(fā)、醫(yī)療核磁共振、射頻感應(yīng)加熱等眾多方面。隨著半導(dǎo)體技術(shù)的發(fā)展,產(chǎn)生了眾多適用于功率電子技術(shù)的大功率、高頻率的功率半導(dǎo)體器件,也隨之推動(dòng)了大功率射頻振蕩器固態(tài)化、高頻化、高效率方向的發(fā)展。功率放大器是射頻功率振蕩器的核心組成部分,主要完成能量的交互和積累,功率放大器的性能在一定程度上直接決定了射頻功率振蕩器的性能。E類功率放大器理想效率可達(dá)100%,將其用于射頻功率振蕩器可大大提高整體效率,并且具有元件少、體積小、成本低、重量輕等優(yōu)點(diǎn)。本文設(shè)計(jì)和研究了一種以軟開關(guān)E類功率放大器為核心的射頻功率振蕩器。首先對E類射頻功率振蕩器的組成形式,E類射頻功率放大器的結(jié)構(gòu)、工作原理進(jìn)行了分析。重點(diǎn)介紹了E類功率放大器的設(shè)計(jì)原理,從理論上分析了損耗的產(chǎn)生,并以此為基礎(chǔ)設(shè)計(jì)制作了高效率的E類射頻振蕩器電路。振蕩器工作在E類軟開關(guān)狀態(tài),采用ARF461型MOSFET作為核心功率放大器件,要求工作頻率為13.56MHz,輸出功率100W,效率90%。然后通過ADS仿真軟件對不同條件下的電路性能進(jìn)行分析,針對存在的問題根據(jù)E類射頻振蕩器的原理進(jìn)行電路的優(yōu)化,對實(shí)物的制作具有指導(dǎo)作用。最后,根據(jù)現(xiàn)有條件對E類射頻功率振蕩器進(jìn)行電路實(shí)驗(yàn),進(jìn)一步驗(yàn)證設(shè)計(jì)的可行性。通過對實(shí)驗(yàn)波形和實(shí)驗(yàn)中發(fā)現(xiàn)的問題的分析和探討,為后續(xù)的研究工作的展開奠定了基礎(chǔ)。
[Abstract]:High power RF oscillator can convert DC energy into high power RF energy. It is widely used in many fields, such as industry, medicine, military, scientific research and so on. As the core technology of RF power supply, RF power oscillator is applied in plasma excitation, laser excitation, medical nuclear magnetic resonance, RF induction heating and so on. With the development of semiconductor technology, there are many high-power and high-frequency power semiconductor devices suitable for power electronic technology, which also promote the development of high-power RF oscillator solid-state, high-frequency and high-efficiency. Power amplifier is the core component of RF power oscillator, which mainly completes the interaction and accumulation of energy. The performance of the power amplifier directly determines the performance of the RF power oscillator to a certain extent. Small size, low cost, light weight and other advantages. In this paper, a kind of RF power oscillator with soft switching E power amplifier as its core is designed and studied. First, the composition of class E RF power oscillator, the structure and working principle of class E RF power amplifier are analyzed. This paper mainly introduces the design principle of class E power amplifier, analyzes the generation of loss theoretically, and designs and manufactures a high efficiency class E RF oscillator circuit based on it. The oscillator operates in the class E soft switching state. ARF461 type MOSFET is used as the core power amplifier device. The operating frequency is 13.56 MHz, the output power is 100 W, and the efficiency is 90%. Then the circuit performance under different conditions is analyzed by ADS simulation software, and the circuit is optimized according to the principle of class E RF oscillator. Finally, according to the existing conditions, the class E RF power oscillator circuit experiments are carried out to further verify the feasibility of the design. Through the analysis and discussion of the experimental waveform and the problems found in the experiment, it lays a foundation for further research work.
【學(xué)位授予單位】：鄭州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN752

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本文編號：2300069