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微坑陣列模具掩膜電化學(xué)刻蝕研究

發(fā)布時(shí)間:2018-10-29 08:39
【摘要】:隨著MEMS技術(shù)的快速發(fā)展,細(xì)胞生物學(xué)、水環(huán)境污染分析、蛋白質(zhì)分離等領(lǐng)域?qū)ξ⒘骺匦酒男枨笥訌?qiáng)烈,同時(shí),與金屬模具制造技術(shù)相關(guān)的掩膜電化學(xué)刻蝕工藝也受到了密切關(guān)注。本文主要研究了兩種金屬材料微坑陣列模具的制作工藝:模具鋼與鎳微坑陣列模具。研究結(jié)果能夠?yàn)榻饘倌>咧谱飨嚓P(guān)領(lǐng)域提供工藝參考。利用COMSOL軟件對(duì)單個(gè)微坑及微坑陣列的電流密度分布規(guī)律進(jìn)行了有限元分析。首先,本文分別對(duì)單個(gè)微坑及微坑陣列進(jìn)行了建模,掩膜孔徑分別取50μm與100μm。然后,分別設(shè)置邊界條件,電流密度設(shè)定為5A/dm2。最后,通過(guò)求解及后處理,得到了陽(yáng)極表面電流密度的分布規(guī)律,為掩膜電化學(xué)刻蝕微坑陣列提供了參考。對(duì)掩膜電化學(xué)刻蝕模具鋼微坑陣列模具進(jìn)行了實(shí)驗(yàn)研究。首先,本文采用BN308光刻膠作為掩膜并通過(guò)實(shí)驗(yàn)分析了拋光工藝對(duì)刻蝕均勻性的影響。然后,研究了酸洗對(duì)基板刻蝕的影響,得出酸洗可以改善刻蝕均勻性的結(jié)論,并通過(guò)調(diào)節(jié)溶液pH的方法,解決了沉淀問(wèn)題。最后,通過(guò)高低電流密度搭配(10A/dm2、5A/dm2)的加工方法,改善了微坑陣列均勻性。對(duì)掩膜電化學(xué)刻蝕鎳微坑陣列模具進(jìn)行了實(shí)驗(yàn)研究。首先,本文通過(guò)引入變異系數(shù)的方法,定量分析了掩膜孔徑與電流密度對(duì)微坑陣列均勻性的影響。然后,通過(guò)基板拋光、酸洗工藝及調(diào)節(jié)pH的方法,提高了微坑陣列均勻性并解決了溶液的沉淀問(wèn)題。對(duì)掩膜電化學(xué)刻蝕鎳凹槽模具進(jìn)行了探索性研究。本文通過(guò)掩膜電化學(xué)刻蝕方法加工了不同線寬的凹槽,并討論了不同線寬與加工區(qū)域凹槽的側(cè)蝕量與蝕刻系數(shù)。
[Abstract]:With the rapid development of MEMS technology, the demand for microfluidic chips is increasing in the fields of cell biology, water pollution analysis, protein separation and so on. The mask electrochemical etching technology related to metal die manufacturing technology has also received close attention. In this paper, the fabrication process of two kinds of metal materials microcrater array die: die steel and nickel microcrater array die is studied. The results can be used as a reference for metal die making related fields. The current density distribution of single microcrater and microcrater array is analyzed by using COMSOL software. Firstly, a single microcrater and a microcrater array are modeled, and the mask aperture is 50 渭 m and 100 渭 m, respectively. Then, the boundary conditions are set, and the current density is set to 5 A / DM 2. Finally, the distribution of the current density on the anode surface is obtained by solving and post-processing, which provides a reference for the mask electrochemical etching microcrater array. An experimental study was carried out on the steel microcrater array die for the electrochemical etching of the mask. Firstly, BN308 photoresist is used as mask and the effect of polishing process on etching uniformity is analyzed experimentally. Then, the effect of pickling on substrate etching was studied, and the conclusion that acid pickling could improve etching uniformity was concluded, and the precipitation problem was solved by adjusting solution pH. Finally, the uniformity of the microcrater array is improved by the method of high and low current density collocation (10A / dm ~ (2) / 5 A / D ~ (2). An experimental study on the electrochemical etching of nickel microcrater array die by mask was carried out. Firstly, the influence of mask aperture and current density on the uniformity of the microcrater array is quantitatively analyzed by introducing the coefficient of variation. Then, by polishing substrate, pickling and adjusting pH, the uniformity of microcrater array is improved and the solution precipitation problem is solved. An exploratory study on the electrochemical etching of nickel grooves with mask was carried out. In this paper, the grooves with different linewidths are fabricated by means of mask electrochemical etching, and the side erosion amount and etching coefficient of grooves in different linewidths and machining regions are discussed.
【學(xué)位授予單位】:大連理工大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TN305.7

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 江一;汪煒;劉正塤;何鐵軍;彭昀;;激波輔助純鈦微細(xì)群孔光刻電解試驗(yàn)研究[J];電加工與模具;2010年01期



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