【摘要】：隨著航天技術(shù)的不斷發(fā)展,衛(wèi)星數(shù)傳對發(fā)射機(jī)有著更高的要求。功率放大器作為決定發(fā)射機(jī)性能的模塊之一,更高的效率、大帶寬、小體積、高穩(wěn)定性等特點(diǎn)是其永恒的設(shè)計(jì)目標(biāo)。目前在X波段常用的行波管放大器體積大、成本高,GaAs固態(tài)放大器的輸出功率和效率偏低,二者均不能完全兼顧以上指標(biāo)要求。由于GaN半導(dǎo)體技術(shù)的發(fā)展,GaN功率器件輸出功率大、增益高、帶寬大、效率高、穩(wěn)定性好,適用于高效、大帶寬功放的設(shè)計(jì)。論文的研究目的是研制出X波段的30W輸出功率GaN固態(tài)功率放大器原理樣機(jī)。論文首先介紹了GaN功放器件的特點(diǎn)、GaN器件對比GaAs器件的優(yōu)勢以及國內(nèi)外發(fā)展動態(tài)和現(xiàn)狀,并提出了論文的設(shè)計(jì)目標(biāo)。之后簡單闡述了功放設(shè)計(jì)的基本原理以及功放的主要參數(shù)。在第三章介紹了提取功放實(shí)際性能參數(shù)的大信號負(fù)載牽引測試技術(shù)、小信號的去嵌入技術(shù)以及相應(yīng)的TRL校準(zhǔn)技術(shù)的原理。論文在功放的設(shè)計(jì)中主要完成了以下工作:(1)通過需求分析和比較器件性能,制定了以SGK7785-30A作為GaN主功放器件的三級放大的電路設(shè)計(jì)方案;(2)設(shè)計(jì)了GaN放大器的夾具、校準(zhǔn)件并完成了負(fù)載遷移測試,確定了功放的工作阻抗;依次設(shè)計(jì)了阻抗匹配網(wǎng)絡(luò)、偏置網(wǎng)絡(luò)、電路原理圖并進(jìn)行了相應(yīng)的仿真分析;(3)設(shè)計(jì)、優(yōu)化了電路版圖及結(jié)構(gòu),并投板加工,進(jìn)行了對功放性能的測試以及結(jié)果分析。測試結(jié)果表明,GaN功放在8.1GHz中心頻率下輸出功率大于33W,整機(jī)增益大于36dB、GaN單級效率大于35%,整機(jī)效率大于30%,帶寬大于500MHz,帶內(nèi)增益平坦度小于1dB,功放結(jié)構(gòu)的物理尺寸150 x 100 x 26 mm3。相較于同頻段GaAs固態(tài)功放在輸出功率、效率、增益上均有明顯優(yōu)勢。
[Abstract]:With the continuous development of space technology, satellite data transmission has higher requirements for transmitters. As one of the modules that determine the transmitter performance, power amplifier has the characteristics of high efficiency, large bandwidth, small volume and high stability. At present, the traveling wave tube amplifiers commonly used in X-band are large in volume, high in cost, and low in output power and efficiency of GaAs solid-state amplifiers. Neither of them can fully meet the above requirements. Due to the development of GaN semiconductor technology, GaN power devices have large output power, high gain, large bandwidth, high efficiency and good stability. It is suitable for the design of high efficiency and large bandwidth power amplifier. The purpose of this paper is to develop a 30 W output power GaN solid state power amplifier principle prototype in X band. This paper first introduces the characteristics of GaN power amplifier devices, the advantages of GaN devices compared with GaAs devices, as well as the development trends and present situation at home and abroad, and puts forward the design objectives of the paper. After that, the basic principle of power amplifier design and the main parameters of power amplifier are briefly described. In the third chapter, the principle of large signal load traction test technique, small signal de-embedding technique and TRL calibration technique are introduced. The main work of this paper is as follows: (1) by analyzing the requirements and comparing the performance of the power amplifier, a three-stage amplifier circuit with SGK7785-30A as the main power amplifier device is designed, and (2) the clamp of the GaN amplifier is designed. The load transfer test is completed, and the working impedance of the power amplifier is determined. The impedance matching network, bias network, circuit schematic diagram and corresponding simulation analysis are designed in turn. (3) the layout and structure of the circuit are optimized. The performance of power amplifier was tested and the results were analyzed. The test results show that the output power of GaN power amplifier is more than 33W at the central frequency of 8.1GHz, the single-stage efficiency of the whole amplifier is more than 35dBGaN, the efficiency of the whole amplifier is more than 30m Hz, the bandwidth is more than 500MHz, the in-band gain flatness is less than 1dB, the physical size of the power amplifier structure is 150d100x 26 mm3.. Compared with the same frequency band GaAs solid-state power amplifier has obvious advantages in output power efficiency and gain.
【學(xué)位授予單位】：中國科學(xué)院國家空間科學(xué)中心
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN722.75

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