【摘要】：隨著航天技術(shù)的不斷發(fā)展,衛(wèi)星數(shù)傳對(duì)發(fā)射機(jī)有著更高的要求。功率放大器作為決定發(fā)射機(jī)性能的模塊之一,更高的效率、大帶寬、小體積、高穩(wěn)定性等特點(diǎn)是其永恒的設(shè)計(jì)目標(biāo)。目前在X波段常用的行波管放大器體積大、成本高,GaAs固態(tài)放大器的輸出功率和效率偏低,二者均不能完全兼顧以上指標(biāo)要求。由于GaN半導(dǎo)體技術(shù)的發(fā)展,GaN功率器件輸出功率大、增益高、帶寬大、效率高、穩(wěn)定性好,適用于高效、大帶寬功放的設(shè)計(jì)。論文的研究目的是研制出X波段的30W輸出功率GaN固態(tài)功率放大器原理樣機(jī)。論文首先介紹了GaN功放器件的特點(diǎn)、GaN器件對(duì)比GaAs器件的優(yōu)勢(shì)以及國(guó)內(nèi)外發(fā)展動(dòng)態(tài)和現(xiàn)狀,并提出了論文的設(shè)計(jì)目標(biāo)。之后簡(jiǎn)單闡述了功放設(shè)計(jì)的基本原理以及功放的主要參數(shù)。在第三章介紹了提取功放實(shí)際性能參數(shù)的大信號(hào)負(fù)載牽引測(cè)試技術(shù)、小信號(hào)的去嵌入技術(shù)以及相應(yīng)的TRL校準(zhǔn)技術(shù)的原理。論文在功放的設(shè)計(jì)中主要完成了以下工作:(1)通過需求分析和比較器件性能,制定了以SGK7785-30A作為GaN主功放器件的三級(jí)放大的電路設(shè)計(jì)方案;(2)設(shè)計(jì)了GaN放大器的夾具、校準(zhǔn)件并完成了負(fù)載遷移測(cè)試,確定了功放的工作阻抗;依次設(shè)計(jì)了阻抗匹配網(wǎng)絡(luò)、偏置網(wǎng)絡(luò)、電路原理圖并進(jìn)行了相應(yīng)的仿真分析;(3)設(shè)計(jì)、優(yōu)化了電路版圖及結(jié)構(gòu),并投板加工,進(jìn)行了對(duì)功放性能的測(cè)試以及結(jié)果分析。測(cè)試結(jié)果表明,GaN功放在8.1GHz中心頻率下輸出功率大于33W,整機(jī)增益大于36dB、GaN單級(jí)效率大于35%,整機(jī)效率大于30%,帶寬大于500MHz,帶內(nèi)增益平坦度小于1dB,功放結(jié)構(gòu)的物理尺寸150 x 100 x 26 mm3。相較于同頻段GaAs固態(tài)功放在輸出功率、效率、增益上均有明顯優(yōu)勢(shì)。
[Abstract]:With the continuous development of space technology, satellite data transmission has higher requirements for transmitters. As one of the modules that determine the transmitter performance, power amplifier has the characteristics of high efficiency, large bandwidth, small volume and high stability. At present, the traveling wave tube amplifiers commonly used in X-band are large in volume, high in cost, and low in output power and efficiency of GaAs solid-state amplifiers. Neither of them can fully meet the above requirements. Due to the development of GaN semiconductor technology, GaN power devices have large output power, high gain, large bandwidth, high efficiency and good stability. It is suitable for the design of high efficiency and large bandwidth power amplifier. The purpose of this paper is to develop a 30 W output power GaN solid state power amplifier principle prototype in X band. This paper first introduces the characteristics of GaN power amplifier devices, the advantages of GaN devices compared with GaAs devices, as well as the development trends and present situation at home and abroad, and puts forward the design objectives of the paper. After that, the basic principle of power amplifier design and the main parameters of power amplifier are briefly described. In the third chapter, the principle of large signal load traction test technique, small signal de-embedding technique and TRL calibration technique are introduced. The main work of this paper is as follows: (1) by analyzing the requirements and comparing the performance of the power amplifier, a three-stage amplifier circuit with SGK7785-30A as the main power amplifier device is designed, and (2) the clamp of the GaN amplifier is designed. The load transfer test is completed, and the working impedance of the power amplifier is determined. The impedance matching network, bias network, circuit schematic diagram and corresponding simulation analysis are designed in turn. (3) the layout and structure of the circuit are optimized. The performance of power amplifier was tested and the results were analyzed. The test results show that the output power of GaN power amplifier is more than 33W at the central frequency of 8.1GHz, the single-stage efficiency of the whole amplifier is more than 35dBGaN, the efficiency of the whole amplifier is more than 30m Hz, the bandwidth is more than 500MHz, the in-band gain flatness is less than 1dB, the physical size of the power amplifier structure is 150d100x 26 mm3.. Compared with the same frequency band GaAs solid-state power amplifier has obvious advantages in output power efficiency and gain.
【學(xué)位授予單位】：中國(guó)科學(xué)院國(guó)家空間科學(xué)中心
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN722.75

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 陳熾;胡濤;陳俊;菊衛(wèi)東;汪蕾;;星載氮化鎵功率放大器設(shè)計(jì)[J];固體電子學(xué)研究與進(jìn)展;2014年05期

2 武小坡;趙海洋;奚松濤;;星載高功率固態(tài)功放關(guān)鍵技術(shù)與實(shí)驗(yàn)研究[J];雷達(dá)學(xué)報(bào);2014年03期

3 崔玉興;王民娟;付興昌;馬杰;倪濤;蔡樹軍;;高效率X波段GaN MMIC功率放大器的研制[J];半導(dǎo)體技術(shù);2012年07期

4 余振坤;劉登寶;;S波段寬帶GaN芯片高功率放大器的應(yīng)用研究[J];微波學(xué)報(bào);2011年02期

5 韋小剛;吳明贊;;基于負(fù)載牽引技術(shù)的射頻功率放大器設(shè)計(jì)[J];電氣電子教學(xué)學(xué)報(bào);2010年02期

6 方建洪;倪峰;馮皓;;X波段50W GaN功放管的應(yīng)用研究[J];火控雷達(dá)技術(shù);2010年01期

7 陳熾;郝躍;馮輝;馬曉華;張進(jìn)城;胡仕剛;;X波段單級(jí)氮化鎵固態(tài)放大器[J];西安電子科技大學(xué)學(xué)報(bào);2009年06期

8 邢靖;孫衛(wèi)忠;;基于負(fù)載牽引測(cè)試系統(tǒng)的功率管參數(shù)提取[J];微波學(xué)報(bào);2009年03期

9 劉迪;;怎樣設(shè)計(jì)和驗(yàn)證TRL校準(zhǔn)件及具體過程[J];電子產(chǎn)品世界;2008年03期

10 余振坤;曲文英;;射頻大功率測(cè)量誤差分析[J];微波學(xué)報(bào);2006年03期

相關(guān)碩士學(xué)位論文 前8條

1 孫世滔;GaN高效率功率放大器研究[D];合肥工業(yè)大學(xué);2014年

2 鄭云飛;基于負(fù)載牽引系統(tǒng)的LDMOS功放設(shè)計(jì)[D];西安電子科技大學(xué);2014年

3 謝樹義;高效率與寬帶功率放大器研制[D];電子科技大學(xué);2013年

4 裴晨;高效率S波段GaN線性功率放大器的設(shè)計(jì)與實(shí)現(xiàn)[D];南京理工大學(xué);2013年

5 魏濤;X波段GaN基功率放大器設(shè)計(jì)[D];電子科技大學(xué);2012年

6 安明;基于負(fù)載牽引法的微波大功率自動(dòng)調(diào)配器的控制軟件的研究及其應(yīng)用[D];西安電子科技大學(xué);2011年

7 盧俊鋒;微波平面電路網(wǎng)絡(luò)S參數(shù)測(cè)試校準(zhǔn)方法的研究[D];西安電子科技大學(xué);2011年

8 武曉鶯;X波段GaN微波單片低噪聲放大器的設(shè)計(jì)[D];西安電子科技大學(xué);2010年

，

本文編號(hào)：2293748