一種全MOS型超低功耗基準(zhǔn)電壓源設(shè)計
發(fā)布時間：2018-10-23 20:41
【摘要】：在0.18μm標(biāo)準(zhǔn)CMOS工藝模型下,利用亞閾值MOS管以及深線性區(qū)MOS管的特性,設(shè)計了一種全MOS型基準(zhǔn)電壓源。該基準(zhǔn)源不使用電阻,具有超低功耗、低溫度系數(shù)的特點,并且可在電源電壓低于1V的情況下正常工作。當(dāng)電源電壓為1.2V,溫度范圍為-55℃~125℃,該基準(zhǔn)源的溫度系數(shù)為2.67×10~(-5)/℃,電源抑制比為-45.42dB@100Hz,功耗為105.96nW。
[Abstract]:Based on the 0.18 渭 m standard CMOS process model, a full MOS voltage reference source is designed using the characteristics of subthreshold MOS transistor and deep linear MOS transistor. The reference source does not use resistor, has the characteristics of ultra-low power consumption, low temperature coefficient, and can work normally when the supply voltage is less than 1V. When the power supply voltage is 1.2V and the temperature range is -55 鈩，
本文編號：2290406
[Abstract]:Based on the 0.18 渭 m standard CMOS process model, a full MOS voltage reference source is designed using the characteristics of subthreshold MOS transistor and deep linear MOS transistor. The reference source does not use resistor, has the characteristics of ultra-low power consumption, low temperature coefficient, and can work normally when the supply voltage is less than 1V. When the power supply voltage is 1.2V and the temperature range is -55 鈩，
本文編號：2290406
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