【摘要】：N型多米諾或門是高性能集成電路常用的動(dòng)態(tài)單元,負(fù)偏置溫度不穩(wěn)定性(NBTI)引起的PMOS管老化問題已成為降低多米諾或門電路可靠性的主要因素之一。仿真分析表明,N型多米諾或門中各種PMOS管受NBTI的影響有明顯差別。針對(duì)這種差異,提出一種雙閾值配置的抗老化多米諾或門。對(duì)電路老化起關(guān)鍵作用的保持PMOS管和反相器PMOS管采用低閾值電壓設(shè)計(jì)。仿真結(jié)果表明,在保證噪聲容限和功耗的條件下,該雙閾值配置PMOS管的多米諾或門在10年NBTI老化后仍有0.397%的時(shí)序余量。
[Abstract]:N-type dominoes or gates are commonly used dynamic cells in high performance integrated circuits. The aging problem of PMOS tubes caused by negative bias temperature instability (NBTI) has become one of the main factors to reduce the reliability of domino or gate circuits. Simulation results show that various PMOS tubes in N-type dominoes or gates are significantly different from each other under the influence of NBTI. In view of this difference, a double threshold configuration of anti-aging dominoes or gates is proposed. The low threshold voltage design is used for holding PMOS transistor and inverter PMOS transistor which play a key role in circuit aging. The simulation results show that under the condition of ensuring the noise tolerance and power consumption, the domino or gate with the double threshold PMOS transistor still has a time series allowance of 0.393% after 10 years of NBTI aging.
【作者單位】： 合肥工業(yè)大學(xué)電子科學(xué)與應(yīng)用物理學(xué)院;江蘇商貿(mào)職業(yè)學(xué)院電子信息系;
【基金】：國家自然科學(xué)基金資助項(xiàng)目(61371025,61574052) 南通市應(yīng)用基礎(chǔ)研究科技計(jì)劃資助項(xiàng)目(GY12015037)
【分類號(hào)】：TN386.1

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