【摘要】：碳化硅(SiC)功率金屬-氧化物半導(dǎo)體場效應(yīng)管(MOSFET)以其優(yōu)越的性能受到廣泛關(guān)注,但受限于器件設(shè)計和工藝技術(shù)水平,器件的潛力尚未得到充分發(fā)揮。介紹了SiC功率MOSFET的結(jié)構(gòu)設(shè)計和加工工藝,采用一氧化氮(NO)柵氧退火工藝技術(shù)研制出擊穿電壓為1 800 V、比導(dǎo)通電阻為8mΩ·cm~2的SiC MOSFET器件,測試評價了器件的直流和動態(tài)特性,關(guān)斷特性顯著優(yōu)于Si IGBT。評估了SiC MOSFET器件柵氧結(jié)構(gòu)的可靠性,器件的柵氧介質(zhì)壽命及閾值電壓穩(wěn)定性均達(dá)到工程應(yīng)用要求。
[Abstract]:Silicon carbide (SiC) power metal-oxide semiconductor field effect transistor (MOSFET) has attracted wide attention for its superior performance. However, due to the level of device design and technology, the potential of the device has not been fully utilized. The structure design and fabrication process of SiC power MOSFET are introduced. A SiC MOSFET device with a breakdown voltage of 1 800 V and a specific on-resistance of 8 m 惟 cm~2 is developed by using the nitric oxide (NO) gate oxygen annealing technology. The DC and dynamic characteristics of the device are tested and evaluated. Turn-off characteristics are significantly better than Si IGBT. The reliability of gate oxygen structure of SiC MOSFET device is evaluated. The lifetime of gate oxygen medium and the stability of threshold voltage of SiC MOSFET device meet the requirements of engineering application.
【作者單位】： 寬禁帶半導(dǎo)體電力電子器件國家重點實驗室南京電子器件研究所;
【分類號】：TN386

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