天堂国产午夜亚洲专区-少妇人妻综合久久蜜臀-国产成人户外露出视频在线-国产91传媒一区二区三区

當前位置:主頁 > 科技論文 > 電子信息論文 >

一種低溫度系數(shù)觸發(fā)電流的可控硅設計

發(fā)布時間:2018-10-17 15:19
【摘要】:可控硅從上世紀50年代問世以來,經(jīng)過近60年的發(fā)展已經(jīng)在現(xiàn)代社會的生產(chǎn)和生活中扮演著越來越重要的角色:由于具有優(yōu)良的調(diào)頻、變速性能,可控硅被廣泛應用在工業(yè)生產(chǎn);同時可控硅也被大量應用在漏電保護器、白色家電以及摩托車配件等消費電子領域。根據(jù)觸發(fā)電流的大小,可控硅被大致劃分為強觸發(fā)可控硅和微觸發(fā)可控硅兩大類。其中微觸發(fā)可控硅由于具有常溫下觸發(fā)電流小、柵極功耗低等優(yōu)點越來越受到市場的重視,但是微觸發(fā)可控硅的觸發(fā)電流受溫度影響較大,高溫下觸發(fā)電流減小會帶來誤觸發(fā)的問題,嚴重時甚至會使可控硅處于長開狀態(tài),失去開關的作用;低溫下觸發(fā)電流增大會帶來觸發(fā)困難,柵極功耗增大的問題;诖,本文分別提出可以減小低溫環(huán)境和高溫環(huán)境下觸發(fā)電流溫度系數(shù)的方法,并且提供一種低溫度系數(shù)觸發(fā)電流的可控硅設計,旨在穩(wěn)定微觸發(fā)可控硅的觸發(fā)電流溫度系數(shù),使其在高溫下能穩(wěn)定工作,避免誤觸發(fā)等問題的發(fā)生。本設計的主要參數(shù)指標是:正反向耐壓均在800V以上,導通電壓小于2V,常溫下(25℃)的觸發(fā)電流小于100μA,高溫下(80℃)觸發(fā)電流和常溫下觸發(fā)電流大小的比值大于0.5。本文主要包括以下幾個方面:1、詳細介紹可控硅的觸發(fā)原理,從理論上分析觸發(fā)電流隨溫度變化的原因,分別提出能夠穩(wěn)定低溫和高溫下觸發(fā)電流溫度系數(shù)的方法;2、對帶有多晶硅電阻條的可控硅結構進行工藝仿真,拉偏工藝參數(shù),優(yōu)化過后使仿真結果符合設計要求。確定各部分尺寸后進行版圖設計;3、完成工藝仿真、版圖設計后進行流片實驗,流片完成后進行測試,測試結果:正向擊穿電壓為800V,反向擊穿電壓1000V;125℃時的正向漏電為35μA,反向漏電為50μA;常溫下(25℃)的觸發(fā)電流IGT(25℃)為60μA,高溫下(80℃)的觸發(fā)電流IGT(80℃)為36μA,觸發(fā)電流的溫度系數(shù)IGT(80℃)/IGT(25℃)等于0.6;正向?qū)▔航禐?.96V;臨界di/dt值為18A/μs,臨界dv/dt值為20V/μs。測試結果表明:各項參數(shù)均達到設計要求。
[Abstract]:Since the advent of SCR in the 1950s, after nearly 60 years of development, it has played an increasingly important role in the production and life of modern society. Thyristor is widely used in industrial production, and it is also widely used in consumer electronics such as leakage protectors, white appliances and motorcycle accessories. According to the magnitude of trigger current, thyristor is divided into two categories: strong trigger thyristor and microtriggered thyristor. Among them, the micro-trigger thyristor has been paid more and more attention to by the market because of its advantages of low trigger current and low grid power consumption at room temperature, but the trigger current of micro-trigger thyristor is greatly affected by temperature. The decrease of trigger current at high temperature will lead to the problem of false trigger, and in serious cases, the thyristor will be in a long open state and lose the function of switch. At low temperature, the increase of trigger current will lead to the trigger difficulty and the increase of grid power consumption. Based on this, this paper proposes a method to reduce the trigger current temperature coefficient in low temperature environment and high temperature environment, and provides a low temperature coefficient trigger current thyristor design. The aim of this paper is to stabilize the trigger current temperature coefficient of microtrigger thyristor, so that it can work stably at high temperature and avoid the problem of misfiring. The main parameters of this design are as follows: the forward and backward voltages are above 800V, the conduction voltage is less than 2V, the triggering current at room temperature (25 鈩,

本文編號:2277093

資料下載
論文發(fā)表

本文鏈接:http://sikaile.net/kejilunwen/dianzigongchenglunwen/2277093.html


Copyright(c)文論論文網(wǎng)All Rights Reserved | 網(wǎng)站地圖 |

版權申明:資料由用戶c4eda***提供,本站僅收錄摘要或目錄,作者需要刪除請E-mail郵箱bigeng88@qq.com