【摘要】：以碳化硅(SiC)材料為代表的第三代寬禁帶半導(dǎo)體材料具有寬帶隙、高臨界擊穿電場(chǎng)、高熱導(dǎo)率、高載流子飽和漂移速率等特點(diǎn),特別適合制作耐高溫、高電壓、大功率的電力電子器件,現(xiàn)已成為制備電力電子器件的理想材料。以碳化硅材料制備的功率器件,具有擊穿電壓高、功率大、耐高溫、可靠性高、損耗低等特點(diǎn),將成為構(gòu)建新一代高效輸配電網(wǎng)絡(luò)、滿足新能源發(fā)展需要、支撐我國(guó)國(guó)民經(jīng)濟(jì)發(fā)展的關(guān)鍵性技術(shù)。本文的工作是在國(guó)家863項(xiàng)目(《基于寬禁帶電力電子器件的光伏逆變器研制及示范應(yīng)用》SQ2014AAJY1062)的支持下進(jìn)行的,主要從基于碳化硅器件制備中的關(guān)鍵工藝角度來(lái)研究制備工藝特性,提高器件的成品率,并改善器件的可靠性。主要內(nèi)容包括:1、本文針對(duì)碳化硅功率器件做了工藝研究,特別是對(duì)歐姆接觸工藝做了深入研究,從金屬與半導(dǎo)體接觸理論入手,分析了歐姆接觸的形成機(jī)理,介紹了歐姆接觸獲得低接觸電阻的條件。針對(duì)碳化硅材料研究了碳化硅與金屬的接觸特性。2、通過(guò)對(duì)碳化硅歐姆接觸特性進(jìn)行理論和實(shí)驗(yàn)調(diào)查分析,針對(duì)碳化硅歐姆接觸設(shè)計(jì)了實(shí)驗(yàn)。本文制備了金屬與碳化硅接觸樣品,并使用快速退火設(shè)備進(jìn)行了不同工藝條件下的金屬與碳化硅歐姆接觸退火。3、本文針對(duì)金屬和碳化硅接觸性能做了測(cè)試和分析,分析了不同退火溫度對(duì)金屬碳化硅接觸特性的影響,通過(guò)測(cè)試比接觸電阻隨溫度的變化關(guān)系,發(fā)現(xiàn)退火溫度越高,比接觸電阻率越低,并優(yōu)化出最佳工藝條件為:1000度退火2分鐘,在此工藝條件下得到的比接觸電阻為2.3×10-5Ωcm2。4、本文介紹了在使用等離子體刻蝕機(jī)刻蝕碳化硅工藝中,調(diào)整刻蝕參數(shù)使樣品底部的微溝道削弱的刻蝕技術(shù),研究了刻蝕機(jī)刻蝕功率、反應(yīng)腔室壓力等條件對(duì)刻蝕結(jié)果的影響,著重闡述了RF功率對(duì)刻蝕微溝道效應(yīng)和刻蝕速率的影響并進(jìn)行了優(yōu)化。通過(guò)對(duì)測(cè)試結(jié)果的分析,得出了適合實(shí)際工藝的優(yōu)化條件,獲得了無(wú)微溝道效應(yīng)的刻蝕工藝,刻蝕速率達(dá)到100nm/min,底部粗糙度1.3nm,為設(shè)計(jì)高壓器件提供了工藝保障。
[Abstract]:The third generation wide band gap semiconductor material, represented by silicon carbide (SiC) material, has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift rate and so on, so it is especially suitable for making high temperature resistance and high voltage. High power electronic devices have become an ideal material for power electronic devices. The power device made of silicon carbide material, with the characteristics of high breakdown voltage, high power, high temperature resistance, high reliability and low loss, will become a new generation of high-efficiency transmission and distribution network to meet the needs of new energy development. The key technology that supports our country national economy development. The work of this paper is carried out under the support of the National 863 Project ("Research and demonstration Application of Photovoltaic Inverter based on wide Band-gap Power Electronic Devices"), which is mainly based on the key process of fabrication of silicon carbide devices. Improve the yield of the device and improve the reliability of the device. The main contents are as follows: 1. The process of silicon carbide power devices is studied in this paper, especially the ohmic contact technology. The formation mechanism of ohmic contact is analyzed based on the contact theory of metal and semiconductor. The conditions for obtaining low contact resistance by ohmic contact are introduced. The contact characteristics between silicon carbide and metal were studied. 2. Through theoretical and experimental investigation and analysis of ohmic contact characteristics of silicon carbide, an experiment was designed for ohmic contact of silicon carbide. In this paper, the contact samples of metal and silicon carbide were prepared, and the contact annealing between metal and silicon carbide under different process conditions was carried out by using rapid annealing equipment. 3. The contact properties of metal and silicon carbide were tested and analyzed in this paper. The influence of different annealing temperatures on the contact characteristics of metal silicon carbide is analyzed. By testing the relation between specific contact resistance and temperature, it is found that the higher the annealing temperature, the lower the specific contact resistivity. The optimum process conditions are as follows: annealing at 1000 degree for 2 minutes, and the specific contact resistance of 2.3 脳 10 ~ (-5) 惟 cm2.4, is obtained under this condition. In this paper, the process of silicon carbide etching with plasma etching machine is introduced. The etching technique of adjusting the etching parameters to weaken the microchannel at the bottom of the sample was used to study the influence of etching power and pressure of the reaction chamber on the etching results. The influence of RF power on the etch microchannel effect and etching rate is discussed and optimized. Through the analysis of the test results, the optimum conditions suitable for the practical process are obtained, and the etching process without microchannel effect is obtained. The etching rate is 100 nm / min and the bottom roughness is 1.3 nm, which provides a technological guarantee for the design of high voltage devices.
【學(xué)位授予單位】：北京工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.24

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本文編號(hào)：2273274