發(fā)布時間：2018-10-12 14:07

【摘要】：硅具有資源豐富、耐高溫、易與現(xiàn)有集成電路技術(shù)兼容的優(yōu)點,在半導(dǎo)體行業(yè)中具有廣泛的應(yīng)用。但是,硅的禁帶寬度為1.12eV,因此對波長長于1100nm的入射光基本無光電響應(yīng)。這一固有性質(zhì)限制其在近紅外領(lǐng)域的應(yīng)用。硫族元素超飽和摻雜黑硅突破了這一限制,在可見—近紅外波段均具有高吸收的特性。因此,硫族元素摻雜黑硅在近紅外探測和光電池等領(lǐng)域具有巨大的應(yīng)用前景。本文利用飛秒激光輻照具有雜質(zhì)膜層的硅表面,制備了硒超飽和摻雜黑硅。系統(tǒng)研究了脈沖數(shù)目、硒膜厚度對黑硅的表面形貌、光學(xué)、電學(xué)特性的影響。并基于摻雜黑硅制備n+-n光電探測器,分析探測器的暗電流特性與光電響應(yīng)特性。研究發(fā)現(xiàn),制備的硒摻雜黑硅在400～2200nm波段吸收率達到90%以上,遠高于晶體硅的吸收率。分析認為,在400～1100nm波段,吸收率的提高是由于表面微結(jié)構(gòu)的多次反射作用;在1100～2200nm波段,吸收率的提高是由于表面微結(jié)構(gòu)、表面缺陷與硒元素超飽和摻雜的共同作用。硒摻雜黑硅的表面結(jié)構(gòu)尺寸、吸收率、表面載流子密度均隨脈沖數(shù)目的增大而升高,但載流子遷移率卻隨之降低�；谖鴵诫s黑硅制備的探測器響應(yīng)度隨脈沖數(shù)目增大而提高,脈沖數(shù)目為250時響應(yīng)度最高,在1064nm處達到0.889A/W。當(dāng)脈沖數(shù)目進一步增大至500時,響應(yīng)度反而降低。分析認為,響應(yīng)度受到表面吸收率與微結(jié)構(gòu)尺寸的共同影響。脈沖數(shù)目過大時,盡管吸收率升高,但表面結(jié)構(gòu)尺寸增大,載流子遷移率過低,大量光生載流子未能成功渡越兩極參與導(dǎo)電,因此響應(yīng)度反而降低�；谝陨涎芯拷Y(jié)果,恒定脈沖數(shù)目為250,研究不同硒膜厚度對硒摻黑硅及其器件性能的影響。研究發(fā)現(xiàn),硒摻雜黑硅的表面結(jié)構(gòu)尺寸、吸收率、表面載流子密度均隨硒膜增大而升高,但載流子遷移率卻隨之降低。黑硅探測器在1064nm處光電響應(yīng)度隨硒膜厚度增大而增大,硒膜厚度125nm時制備的器件響應(yīng)度最高。本文根據(jù)脈沖數(shù)目和硒膜厚度兩個變量設(shè)計實驗,分析材料的表面形貌、光學(xué)、電學(xué)及光電響應(yīng)特性,優(yōu)化實驗參數(shù),提高器件光電響應(yīng)度。在脈沖數(shù)目250,硒膜厚度125nm時,制備出響應(yīng)度最高的探測器,達到1.22A/W。
[Abstract]:Silicon is widely used in semiconductor industry because of its advantages of rich resources, high temperature resistance and compatibility with existing IC technology. However, the band gap of silicon is 1.12eV, so there is no photoelectric response to incident light with wavelength longer than 1100nm. This inherent property limits its application in the near infrared field. The sulfur element oversaturated doped black silicon overcomes this limitation and has high absorption in the visible-near infrared band. Therefore, sulfur doped black silicon has great application prospect in near infrared detection and photocell. Selenium supersaturated doped black silicon was prepared by femtosecond laser irradiation on the surface of silicon with impurity film. The effects of the number of pulses and the thickness of selenium film on the surface morphology, optical and electrical properties of black silicon were systematically studied. N-n photodetectors were prepared based on doped black silicon, and the dark current and photoelectric response characteristics of the detectors were analyzed. It is found that the absorptivity of selenium doped black silicon is over 90% in 400~2200nm band, which is much higher than that of crystal silicon. It is concluded that the increase of absorptivity in 400~1100nm band is due to the multiple reflection of surface microstructure, while in 1100~2200nm band, the increase of absorptivity is due to the interaction of surface microstructure, surface defects and selenium supersaturation doping. The surface structure size, absorptivity and surface carrier density of selenium-doped black silicon increase with the increase of the number of pulses, but the carrier mobility decreases. The responsivity of the detector based on selenium-doped black silicon increases with the increase of the number of pulses. When the number of pulses is 250, the responsivity is the highest, reaching 0.889 A / W at 1064nm. When the number of pulses increases to 500, the responsivity decreases. It is concluded that the responsivity is affected by both the surface absorptivity and the size of the microstructure. When the number of pulses is too large, the surface structure size increases, the carrier mobility is too low, and a large number of photogenerated carriers fail to successfully cross the poles to participate in the conduction, so the responsivity decreases. Based on the above results, the effects of different thickness of selenium film on the properties of selenium-doped black silicon and its devices were studied with constant pulse number of 250. It is found that the surface structure size, absorptivity and surface carrier density of Se-doped black silicon increase with the increase of selenium film, but the carrier mobility decreases. The photoelectric responsivity of the black silicon detector increases with the increase of the thickness of the selenium film at 1064nm, and the highest responsivity of the device is obtained when the thickness of the selenium film is 125nm. In this paper, experiments are designed according to the number of pulses and the thickness of selenium film. The surface morphology, optical, electrical and photoelectric response characteristics of the materials are analyzed, and the experimental parameters are optimized to improve the photoelectric responsivity of the devices. When the number of pulses is 250 and the thickness of selenium film is 125nm, a detector with the highest responsivity of 1.22A / W is prepared.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN249;TN304.1

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本文編號：2266406