低功耗CMOS帶隙基準電壓源設計
發(fā)布時間:2018-09-11 09:05
【摘要】:從帶隙基準原理出發(fā),通過對傳統(tǒng)的帶隙基準電路中的反饋環(huán)路進行了改進,設計了一種帶啟動電路的帶隙基準電壓源。帶隙基準電壓源電路具有結(jié)構簡單、功耗低、電壓抑制比高以及溫度系數(shù)低等特點。采用TSMC 0.13μm工藝對電路進行流片,管芯面積為100μm×94μm。測試結(jié)果顯示,電源電壓1V時,在-30~120℃范圍內(nèi)溫度系數(shù)為6.6×10-6/℃,功耗僅1.8μW;電源電壓從0.76V變化到2V,輸出電壓偏差僅1.52mV,電源抑制比達58dB。
[Abstract]:Based on the principle of bandgap reference, the feedback loop in the traditional bandgap reference circuit is improved, and a bandgap voltage reference source with starting circuit is designed. Bandgap voltage reference circuit has the advantages of simple structure, low power consumption, high voltage rejection ratio and low temperature coefficient. The TSMC 0.13 渭 m process is used for the flow sheet of the circuit. The core area is 100 渭 m 脳 94 渭 m. The test results show that the temperature coefficient is 6.6 脳 10 ~ (-6) / 鈩,
本文編號:2236245
[Abstract]:Based on the principle of bandgap reference, the feedback loop in the traditional bandgap reference circuit is improved, and a bandgap voltage reference source with starting circuit is designed. Bandgap voltage reference circuit has the advantages of simple structure, low power consumption, high voltage rejection ratio and low temperature coefficient. The TSMC 0.13 渭 m process is used for the flow sheet of the circuit. The core area is 100 渭 m 脳 94 渭 m. The test results show that the temperature coefficient is 6.6 脳 10 ~ (-6) / 鈩,
本文編號:2236245
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