基于橢圓偏振測量技術(shù)的氮化物半導(dǎo)體材料光學(xué)特性研究
發(fā)布時(shí)間：2018-09-06 08:09
【摘要】：近年來,氮化鎵(GaN)和相關(guān)材料已經(jīng)實(shí)現(xiàn)了許多應(yīng)用,例如發(fā)光二極管(LED)、藍(lán)光/紫外光半導(dǎo)體激光器、大功率電子器件和太陽能電池等。GaN是優(yōu)異的壓電材料,其表現(xiàn)出小的殘余應(yīng)力,可以優(yōu)化光電器件的物理特性和器件性能。銦鎵氮(InGaN)是直接帶隙材料,其禁帶寬度從0.7 eV(InN)到3.4 eV(GaN)連續(xù)可調(diào),涵蓋從紅外(IR)到紫外(UV)的寬光譜范圍,這使其適用于全光譜的光電器件領(lǐng)域。高質(zhì)量高In組分InGaN薄膜的發(fā)展已經(jīng)引起了人們的重視和努力。類似地,氮化鎵鋁(AlGaN)合金由于其導(dǎo)熱性高,介電常數(shù)高和帶隙連續(xù)可調(diào),在高溫、大功率和深紫外光電子器件的開發(fā)中具有非常意義的研究價(jià)值。本文針對氮化物半導(dǎo)體材料的光學(xué)特性,利用橢偏測量技術(shù)對GaN,InGaN和AlGaN的光學(xué)常數(shù)進(jìn)行了分析研究。本論文的主要內(nèi)容如下:(1)對金屬有機(jī)化學(xué)氣相沉積法(MOCVD)在c面藍(lán)寶石基底上生長的硅摻雜的n型GaN薄膜樣品進(jìn)行室溫下多角度的橢圓偏振光譜的測試,并采用 Gaussian、Psemi-Mo 和 Psemi-Tri 振子模型在 193 nm-1650 nm 范圍內(nèi)模擬描述GaN薄膜和GaN緩沖層。經(jīng)過對橢偏數(shù)據(jù)進(jìn)行處理分析,可以高效的得到實(shí)驗(yàn)樣品可靠的光學(xué)常數(shù),為研究材料的能帶結(jié)構(gòu)提供了一個(gè)新的思路。(2)對高壓化學(xué)氣相沉積法(HPCVD)生長的含有不同In組分的InxGa1-xN薄膜樣品進(jìn)行多角度變溫橢偏光譜測量實(shí)驗(yàn),測試溫度范圍為室溫至500℃。使用Tauch-Lorentz振子模型描述InxGa1-xN薄膜的光學(xué)常數(shù)。隨In分量的增加InxGa1-xN光學(xué)常數(shù)出現(xiàn)和測試溫度的增加時(shí)相同的趨勢。(3)采用高精度的橢圓偏振測量技術(shù)研究了 A1組分變化和溫度變化(300 K-823 K)對AlxGa1-N外延層的光學(xué)性能的影響。隨著溫度的升高,透明區(qū)域的折射率增加,所有研究樣品的光學(xué)帶隙值都降低。
[Abstract]:In recent years, gallium nitride (GaN) and related materials have achieved many applications, such as (LED), blue / ultraviolet semiconductor lasers, high-power electronic devices and solar cells. It shows small residual stress and can optimize the physical characteristics and device performance of optoelectronic devices. Indium gallium nitrogen (InGaN) is a direct bandgap material, whose band gap is continuously adjustable from 0.7 eV (InN) to 3.4 eV (GaN), covering a wide spectrum range from infrared (IR) to ultraviolet (UV), which makes it suitable for the field of optoelectronic devices with full spectrum. The development of high quality and high In component InGaN thin films has attracted people's attention and efforts. Similarly, because of its high thermal conductivity, high dielectric constant and continuous tunable band gap, Gallium AlN (AlGaN) alloy is of great significance in the development of high temperature, high power and deep ultraviolet photoelectronic devices. In this paper, the optical constants of GaN,InGaN and AlGaN are studied by ellipsometry according to the optical properties of nitride semiconductor materials. The main contents of this thesis are as follows: (1) the silicon doped n-type GaN films grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) were measured at room temperature by multi-angle elliptical polarization spectroscopy. Gaussian,Psemi-Mo and Psemi-Tri oscillator models were used to simulate and describe the GaN film and GaN buffer layer in the range of 193 nm-1650 nm. After processing and analyzing the ellipsometry data, the reliable optical constants of the experimental samples can be obtained efficiently. A new idea is provided for the study of the energy band structure of the materials. (2) the multiangle thermo-ellipsometry of InxGa1-xN thin films with different In components grown by high pressure chemical vapor deposition (HPCVD) method is carried out. The measured temperature ranges from room temperature to 500 鈩，
本文編號：2225746
[Abstract]:In recent years, gallium nitride (GaN) and related materials have achieved many applications, such as (LED), blue / ultraviolet semiconductor lasers, high-power electronic devices and solar cells. It shows small residual stress and can optimize the physical characteristics and device performance of optoelectronic devices. Indium gallium nitrogen (InGaN) is a direct bandgap material, whose band gap is continuously adjustable from 0.7 eV (InN) to 3.4 eV (GaN), covering a wide spectrum range from infrared (IR) to ultraviolet (UV), which makes it suitable for the field of optoelectronic devices with full spectrum. The development of high quality and high In component InGaN thin films has attracted people's attention and efforts. Similarly, because of its high thermal conductivity, high dielectric constant and continuous tunable band gap, Gallium AlN (AlGaN) alloy is of great significance in the development of high temperature, high power and deep ultraviolet photoelectronic devices. In this paper, the optical constants of GaN,InGaN and AlGaN are studied by ellipsometry according to the optical properties of nitride semiconductor materials. The main contents of this thesis are as follows: (1) the silicon doped n-type GaN films grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) were measured at room temperature by multi-angle elliptical polarization spectroscopy. Gaussian,Psemi-Mo and Psemi-Tri oscillator models were used to simulate and describe the GaN film and GaN buffer layer in the range of 193 nm-1650 nm. After processing and analyzing the ellipsometry data, the reliable optical constants of the experimental samples can be obtained efficiently. A new idea is provided for the study of the energy band structure of the materials. (2) the multiangle thermo-ellipsometry of InxGa1-xN thin films with different In components grown by high pressure chemical vapor deposition (HPCVD) method is carried out. The measured temperature ranges from room temperature to 500 鈩，
本文編號：2225746
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