石墨烯場效應晶體管微波建模技術研究
發(fā)布時間：2018-09-01 11:03
【摘要】：以硅材料為核心的傳統(tǒng)元器件日益趨近物理極限,越來越難以滿足電子系統(tǒng)小型化、高性能的需求。石墨烯作為一種新型電子材料,以其優(yōu)異的電性能、熱性能和應力性能引起國內(nèi)外研究者的廣泛關注,有望成為下一代半導體器件的核心電子材料之一。以石墨烯為導電層的場效應晶體管作為一種新型納米器件,能夠滿足高性能與小型化結構的要求,成為目前電子器件的研究熱點。準確建立器件模型,對于微波和射頻電路的設計至關重要。本文針對石墨烯場效應晶體管器件模型展開研究,建立了等效電路模型并進行參數(shù)提取。介紹了石墨烯場效應晶體管的基本結構,分析了其工作原理和電學特性。根據(jù)石墨烯場效應晶體管的雙極性輸運的性質(zhì),分析了其輸出特性、開關比、飽和性能。作為對器件工藝的反饋,建立了小信號等效電路模型,包括石墨烯場效應晶體管的等效電路模型參數(shù)的初值測試提取方法,以及S參數(shù)優(yōu)化方法。在小信號模型的基礎上,論文對比了MOSFET、HEMT與石墨烯場效應晶體管的異同,對Angelov非線性模型進行了簡化與改進,提出了電流-電壓,柵源、柵漏電容非線性表達式,建立了石墨烯場效應晶體管射頻大信號模型。并將完整的模型嵌入電路仿真軟件,進行電路參數(shù)仿真,與晶體管的實測數(shù)據(jù)對比顯示,本文建立的模型具有較好的準確度和實用性。
[Abstract]:As a new type of electronic material, graphene, with its excellent electrical, thermal and stress properties, has attracted wide attention of researchers at home and abroad, and is expected to become the core of the next generation semiconductor devices. As a new type of nano-device, field effect transistor with graphene as conductive layer can satisfy the requirements of high performance and miniaturization structure, which has become a hot spot in the research of electronic devices. The basic structure of graphene field effect transistor is introduced, its working principle and electrical characteristics are analyzed. According to the bipolar transport properties of graphene field effect transistor, its output characteristics, switching ratio and saturation performance are analyzed. Based on the feedback, a small signal equivalent circuit model is established, including the initial value test and extraction method of the equivalent circuit model parameters of graphene field effect transistor, and the S parameter optimization method.On the basis of small signal model, the similarities and differences of MOSFET, HEMT and graphene field effect transistor are compared, and the Angelov nonlinear model is simplified. With the improvement, the non-linear expressions of current-voltage, gate source and gate-drain capacitance are presented, and the RF large-signal model of graphene FET is established.
【學位授予單位】：合肥工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
本文編號：2216996
[Abstract]:As a new type of electronic material, graphene, with its excellent electrical, thermal and stress properties, has attracted wide attention of researchers at home and abroad, and is expected to become the core of the next generation semiconductor devices. As a new type of nano-device, field effect transistor with graphene as conductive layer can satisfy the requirements of high performance and miniaturization structure, which has become a hot spot in the research of electronic devices. The basic structure of graphene field effect transistor is introduced, its working principle and electrical characteristics are analyzed. According to the bipolar transport properties of graphene field effect transistor, its output characteristics, switching ratio and saturation performance are analyzed. Based on the feedback, a small signal equivalent circuit model is established, including the initial value test and extraction method of the equivalent circuit model parameters of graphene field effect transistor, and the S parameter optimization method.On the basis of small signal model, the similarities and differences of MOSFET, HEMT and graphene field effect transistor are compared, and the Angelov nonlinear model is simplified. With the improvement, the non-linear expressions of current-voltage, gate source and gate-drain capacitance are presented, and the RF large-signal model of graphene FET is established.
【學位授予單位】：合肥工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN386
【參考文獻】
相關期刊論文 前2條
1 李昕;郭士西;宋輝;李全福;師俊杰;方明;王小力;劉衛(wèi)華;;石墨烯晶體管研究進展[J];西安交通大學學報;2014年10期
2 李洪芹,孫曉瑋,夏冠群,程知群,王德斌;HEMT小信號等效電路參數(shù)提取[J];功能材料與器件學報;2000年01期
相關博士學位論文 前2條
1 桑磊;AlGaN/GaN HEMT功率器件建模研究及高效率放大器設計[D];電子科技大學;2013年
2 王彥;石墨烯的制備及其在聚合物復合材料中的應用[D];上海交通大學;2012年
相關碩士學位論文 前2條
1 王永存;石墨烯場效應晶體管設計加工及特性研究[D];中北大學;2014年
2 楊光;微波毫米波超寬帶低噪聲放大單片技術研究[D];電子科技大學;2009年
，本文編號：2216996
本文鏈接：http://sikaile.net/kejilunwen/dianzigongchenglunwen/2216996.html
教材專著
