【摘要】：采用源漏區(qū)域孔陣列挖槽的方法降低氮化鎵n型歐姆接觸的合金溫度,并改善合金后金屬形貌。相對(duì)于非源漏區(qū)域孔陣列挖槽的氮化鎵n型歐姆接觸合金,合金溫度可降低40℃,合金后源漏金屬形貌尤其是金屬側(cè)邊形貌顯著改善,這對(duì)于提高相關(guān)器件及電路性能、成品率及可靠性很有好處。
[Abstract]:The temperature of n-type ohmic contact of gallium nitride was reduced and the metal morphology was improved by the method of hole array in source and drain area. Compared with n-type gallium nitride ohmic contact alloy with non-source drain area hole array, the alloy temperature can be reduced by 40 鈩，

本文編號(hào)：2212855