發(fā)布時(shí)間：2018-08-29 09:32

【摘要】：碳化硅(SiC)作為第三代半導(dǎo)體的代表材料,具有禁帶寬度大、熱導(dǎo)率高和臨界擊穿電場高等特點(diǎn),所制備的光電器件在高溫、強(qiáng)輻射等極端、惡劣條件下有巨大的應(yīng)用潛力。本文綜述了國內(nèi)外SiC發(fā)光性質(zhì)的研究現(xiàn)狀,介紹SiC發(fā)光的實(shí)際應(yīng)用,闡述了單晶、納米晶和薄膜不同形態(tài)SiC的制備方法及發(fā)光特點(diǎn),并對SiC發(fā)光調(diào)控的研究進(jìn)展進(jìn)行了探討與展望。利用新興技術(shù)手段,可實(shí)現(xiàn)對SiC發(fā)光光譜和發(fā)光效率等性質(zhì)的調(diào)控。
[Abstract]:As the representative material of the third generation semiconductor, silicon carbide (SiC) has the characteristics of wide band gap, high thermal conductivity and high critical breakdown electric field. The photovoltaic devices prepared have great application potential under extreme and bad conditions such as high temperature, strong radiation and so on. In this paper, the research status of SiC luminescence properties at home and abroad is reviewed, and the practical applications of SiC luminescence are introduced. The preparation methods and luminescence characteristics of SiC with different morphology of single crystal, nanocrystalline and thin film are described. The research progress of SiC luminescence regulation is also discussed and prospected. The luminescence spectrum and luminous efficiency of SiC can be regulated by new technology.
【作者單位】： 北京工業(yè)大學(xué)激光工程研究院;北京工業(yè)大學(xué)材料科學(xué)與工程學(xué)院;
【基金】：國家自然科學(xué)基金(50875006) 北京市教委重點(diǎn)項(xiàng)目(KZ201310005005)
【分類號】：TN304.24

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1 胡小波;彭燕;陳秀芳;宋生;魏汝省;王麗煥;徐現(xiàn)剛;;SiC單晶中生長缺陷的研究進(jìn)展[A];第十六屆全國晶體生長與材料學(xué)術(shù)會議論文集-06晶體結(jié)構(gòu)、缺陷和表征[C];2012年

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