【摘要】：隨著航空航天技術(shù)與核技術(shù)的不斷發(fā)展,越來(lái)越多精密的電子設(shè)備需要在輻照環(huán)境中使用,這些設(shè)備中包含的集成電路模塊在受到輻照影響后,電路的性能會(huì)發(fā)生退化甚至功能喪失。為了保證電子設(shè)備能夠在各種輻照環(huán)境中正常工作,對(duì)抗輻照的研究變得越來(lái)越重要。本文以提高厚柵NMOS晶體管的抗總劑量輻照效應(yīng)的性能作為出發(fā)點(diǎn)進(jìn)行研究。具體研究了雙柵MOS結(jié)構(gòu)對(duì)厚柵NMOS晶體管抗總劑量輻照效應(yīng)的性能提升。接著為雙柵MOS結(jié)構(gòu)提出了三種可行的分壓結(jié)構(gòu)。然后對(duì)三種分壓結(jié)構(gòu)的性能進(jìn)行了研究。最后對(duì)文中涉及的幾種電路進(jìn)行了版圖設(shè)計(jì)并制定了詳盡的輻照實(shí)驗(yàn)和測(cè)試方案。本文探討了總劑量輻照效應(yīng)的基本原理,并對(duì)總劑量輻照效應(yīng)對(duì)MOS晶體管的電學(xué)性能影響做了較為詳盡地闡述。本文對(duì)總劑量輻照效應(yīng)模型的建立進(jìn)行了研究分析,并利用Sentaurus TCAD軟件構(gòu)建了厚柵NMOS晶體管、薄柵NMOS晶體管和雙柵NMOS晶體管的3D模型并進(jìn)行了總劑量輻照效應(yīng)的仿真。研究發(fā)現(xiàn)雙柵MOS結(jié)構(gòu)可以提升厚柵NMOS晶體管抗總劑量輻照效應(yīng)的能力。本文首先針對(duì)雙柵MOS結(jié)構(gòu)提出了三種分壓結(jié)構(gòu),分別為電阻分壓結(jié)構(gòu)、二極管分壓結(jié)構(gòu)和PMOS分壓結(jié)構(gòu)。然后通過(guò)Cadence軟件對(duì)三種分壓結(jié)構(gòu)及其構(gòu)成的反相器性能進(jìn)行了研究。最后還通過(guò)對(duì)仿真模型的修改來(lái)模擬MOS器件受到總劑量輻照效應(yīng)影響之后的變化,并用修改之后的模型對(duì)電路的性能進(jìn)行了仿真。研究發(fā)現(xiàn),當(dāng)電路受到總劑量輻照效應(yīng)影響時(shí),采用二極管分壓結(jié)構(gòu)的雙柵MOS反相器對(duì)其開(kāi)關(guān)閾值漂移控制最好,采用PMOS分壓結(jié)構(gòu)的雙柵MOS反相器的傳播延時(shí)增長(zhǎng)量最少。本文對(duì)普通CMOS緩沖器和三種分別采用了不同分壓結(jié)構(gòu)的雙柵MOS緩沖器進(jìn)行了版圖設(shè)計(jì),在對(duì)版圖進(jìn)行了DRC和LVS檢查之后交由代工廠流。并為后續(xù)的總劑量輻照實(shí)驗(yàn)及電路性能測(cè)試制定了詳盡的方案。
[Abstract]:With the continuous development of aerospace technology and nuclear technology, more and more sophisticated electronic devices need to be used in irradiated environment. The performance of the circuit will deteriorate or even lose its function. In order to ensure that electronic devices can work properly in various irradiation environments, the research of anti-irradiation has become more and more important. The purpose of this paper is to improve the performance of thick gate NMOS transistors against total dose radiation. The effect of double gate MOS structure on the total dose radiation resistance of thick gate NMOS transistors is studied in detail. Then three feasible partial voltage structures are proposed for double gate MOS structures. Then, the performance of three kinds of partial pressure structures is studied. Finally, the layout of several circuits involved in the paper is designed and detailed irradiation experiments and test schemes are worked out. In this paper, the basic principle of total dose radiation effect is discussed, and the effect of total dose irradiation effect on the electrical properties of MOS transistor is described in detail. In this paper, the model of total dose irradiation effect is studied and analyzed, and 3D models of thick gate NMOS transistor, thin gate NMOS transistor and double gate NMOS transistor are constructed by using Sentaurus TCAD software and the total dose irradiation effect is simulated. It is found that the double gate MOS structure can enhance the ability of thick gate NMOS transistors to resist total dose radiation effects. In this paper, three voltage divider structures are proposed for double-gate MOS structures, which are resistive divider structure, diode divide-voltage structure and PMOS divide-voltage structure. Then, the performance of three voltage divider structures and their phase inverters are studied by Cadence software. Finally, the simulation model is modified to simulate the change of MOS device after the total dose radiation effect, and the performance of the circuit is simulated by the modified model. It is found that the double gate MOS inverter with diode divider structure has the best threshold drift control when the circuit is affected by the total dose radiation effect, and the double gate MOS inverter with PMOS divider structure has the least propagation delay growth. In this paper, the layout of ordinary CMOS buffers and three kinds of double-gate MOS buffers with different divide-voltage structures are designed. After the layout is checked by DRC and LVS, the layout is transferred to the proxy factory. A detailed scheme for the subsequent total dose irradiation experiment and circuit performance test is proposed.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN386

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本文編號(hào)：2201066