【摘要】：磷化銦高電子遷移率晶體管(InP HEMT)具有高電子遷移率、優(yōu)良的噪聲性能和良好的抗輻射特性等優(yōu)點,非常適合制作低噪聲放大器,現(xiàn)在已經(jīng)逐步發(fā)展為MMIC甚至TMIC領(lǐng)域中一個非常有競爭力的技術(shù)。本文做了如下工作:1、介紹了太赫茲單片低噪聲放大器的最新進(jìn)展,簡要分析了InP HEMT的器件特性以及相關(guān)工藝,并對在片測試技術(shù)進(jìn)行了簡要的介紹,包括幾種常用的二端口校準(zhǔn)技術(shù)以及二端口去嵌技術(shù)。根據(jù)器件在片測試結(jié)果,建立小信號等效電路模型以及噪聲等效電路模型,設(shè)計了一款太赫茲單片低噪聲放大器。設(shè)計過程包括電路拓?fù)浣Y(jié)構(gòu)的選取,偏置電路和匹配電路的設(shè)計,電路的仿真與優(yōu)化,最后在版圖調(diào)整規(guī)則下確定了電路版圖。2、利用國內(nèi)自主研發(fā)的0.1μm InP HEMT工藝對太赫茲單片低噪聲放大器進(jìn)行了流片、測試及結(jié)果分析。在Vd=1.7V,Vg=0V偏置條件下,低噪聲放大器小信號增益在101.3~106.1GHz內(nèi)大于5dB,在104GHz處達(dá)到最大增益7.007dB,輸入、輸出回波損耗優(yōu)于-5dB。雖然電路實測結(jié)果與設(shè)計指標(biāo)有一定的差距,但在太赫茲InP HEMT單片低噪聲放大器研究方面利用自主工藝技術(shù)做了突破性的嘗試。本課題的研究對于提高我國在太赫茲技術(shù)領(lǐng)域的整體水平,縮小與國外領(lǐng)先水平的差距,打破發(fā)達(dá)國家對我國的技術(shù)封鎖具有重要的現(xiàn)實意義。
[Abstract]:Indium phosphide high electron mobility transistor (InP HEMT) has the advantages of high electron mobility, excellent noise performance and good radiation resistance, so it is very suitable for making low noise amplifiers. Now it has gradually developed into a very competitive technology in the field of MMIC and even TMIC. This paper introduces the latest progress of terahertz monolithic low noise amplifier (LNA), briefly analyzes the device characteristics and related processes of InP HEMT, and briefly introduces the on-chip testing technology. It includes several commonly used two-port calibration techniques and two-port deembedding techniques. According to the in-chip test results, the small signal equivalent circuit model and the noise equivalent circuit model are established, and a terahertz monolithic low noise amplifier is designed. The design process includes the selection of circuit topology, the design of bias circuit and matching circuit, the simulation and optimization of circuit. Finally, the circuit layout. 2 is determined under the layout adjustment rule. THz monolithic low noise amplifier (LNA) is fabricated by using the 0. 1 渭 m InP HEMT process developed in China, and the results are tested and analyzed. Under the VDX 1.7V VGG 0V bias condition, the small signal gain of the LNA is greater than 5 dB in 101.3~106.1GHz, and the maximum gain is 7.007 dB at 104GHz. The input and output echo loss is better than -5 dB. Although there is a certain gap between the measured results of the circuit and the design index, a breakthrough attempt has been made in the research of terahertz InP HEMT monolithic low noise amplifier using the independent process technology. The research of this subject has important practical significance to improve the whole level of our country in the field of terahertz technology, narrow the gap with the leading level of foreign countries, and break the technology blockade of developed countries to our country.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN722.3
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本文編號：2199563