WLAN高增益可調(diào)中繼放大器的設計
發(fā)布時間：2018-08-18 18:04
【摘要】：隨著無線通信技術(shù)的迅猛發(fā)展,無線局域網(wǎng)(WLAN,Wireless Local Area Networks)的應用也愈加廣泛。在無線局域網(wǎng)中,低噪聲放大器(LNA)和功率放大器(PA)作為射頻前端的關(guān)鍵模塊,對整個無線通信系統(tǒng)性能的好壞起著決定性的作用。由低噪放與功放組成的中繼放大器,可以在隧道、礦井等場合進行信號的中繼放大,使信號覆蓋范圍更廣、傳播距離更遠�；跓o線局域網(wǎng)設計了一款高增益可調(diào)的中繼放大器,該放大器模塊包括兩級低噪聲放大器、功率放大器和數(shù)控衰減器。低噪聲放大器和功率放大器的設計分別采用了晶體管和芯片兩種方式。低噪聲放大器模塊晶體管方式采用噪聲系數(shù)比較低的ATF55143和ATF54143兩級設計;芯片方式采用HITTITE的HMC286E兩級設計。功率放大器模塊晶體管方式采用ATF50189單級設計;芯片方式采用RFMD的RFPA5201E單級設計。數(shù)控衰減器模塊采用芯片HMC273設計。在電路設計過程中,使用電磁仿真軟件ADS2011對低噪放和功放進行原理圖以及版圖的聯(lián)合仿真設計,并在后期使用PCB設計軟件Altium Designer進行最終的布局布線。經(jīng)過實際的加工測試,兩種實現(xiàn)方式的低噪放均能實現(xiàn)至少26dB的增益,噪聲系數(shù)均小于2dB;兩種方式的功放輸出功率均能到達29dBm,晶體管方式能夠?qū)崿F(xiàn)10dB的增益,芯片方式能夠?qū)崿F(xiàn)30dB的增益;數(shù)控衰減器實現(xiàn)了 1到31dB的衰減控制。可以看出,測試結(jié)果與仿真結(jié)果有較好的一致性。設計實現(xiàn)了低噪聲、高增益及較大輸出功率的指標,達到了高增益可調(diào)中繼放大的目的。
[Abstract]:With the rapid development of wireless communication technology, WLAN (Wireless LAN) is widely used. Low noise amplifier (LNA) and power amplifier (PA) are the key modules of RF front-end in WLAN, which plays a decisive role in the performance of the whole wireless communication system. The relay amplifier composed of low noise amplifier and power amplifier can relay and amplify the signal in tunnels and mines, which makes the signal cover a wider range and spread farther. A high gain adjustable relay amplifier is designed based on WLAN. The amplifier module consists of a two-stage low-noise amplifier, a power amplifier and a numerical control attenuator. Low noise amplifier and power amplifier are designed by transistor and chip respectively. The low noise amplifier module transistor is designed by ATF55143 and ATF54143 with low noise coefficient, and the chip is designed by HMC286E with HITTITE. The transistor mode of power amplifier adopts ATF50189 single stage design, and the chip mode adopts RFPA5201E single stage design of RFMD. The module of numerical control attenuator is designed by chip HMC273. In the process of circuit design, the principle diagram and layout of low noise amplifier and power amplifier are designed by electromagnetic simulation software ADS2011, and the final layout and routing are carried out by PCB design software Altium Designer in the later stage. Through the actual processing test, the low noise amplifier of two kinds of realization can realize at least the gain of 26dB, the noise coefficient is less than 2 dB, the output power of both kinds of power amplifier can reach 29dBm. the gain of 10dB can be realized by transistor mode. The gain of 30dB can be realized by chip mode, and the attenuation control from 1 to 31dB is realized by numerical control attenuator. It can be seen that the test results are in good agreement with the simulation results. The targets of low noise, high gain and large output power are designed and realized, and the purpose of high gain adjustable relay amplification is achieved.
【學位授予單位】：大連海事大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722;TN925.93
本文編號：2190259
[Abstract]:With the rapid development of wireless communication technology, WLAN (Wireless LAN) is widely used. Low noise amplifier (LNA) and power amplifier (PA) are the key modules of RF front-end in WLAN, which plays a decisive role in the performance of the whole wireless communication system. The relay amplifier composed of low noise amplifier and power amplifier can relay and amplify the signal in tunnels and mines, which makes the signal cover a wider range and spread farther. A high gain adjustable relay amplifier is designed based on WLAN. The amplifier module consists of a two-stage low-noise amplifier, a power amplifier and a numerical control attenuator. Low noise amplifier and power amplifier are designed by transistor and chip respectively. The low noise amplifier module transistor is designed by ATF55143 and ATF54143 with low noise coefficient, and the chip is designed by HMC286E with HITTITE. The transistor mode of power amplifier adopts ATF50189 single stage design, and the chip mode adopts RFPA5201E single stage design of RFMD. The module of numerical control attenuator is designed by chip HMC273. In the process of circuit design, the principle diagram and layout of low noise amplifier and power amplifier are designed by electromagnetic simulation software ADS2011, and the final layout and routing are carried out by PCB design software Altium Designer in the later stage. Through the actual processing test, the low noise amplifier of two kinds of realization can realize at least the gain of 26dB, the noise coefficient is less than 2 dB, the output power of both kinds of power amplifier can reach 29dBm. the gain of 10dB can be realized by transistor mode. The gain of 30dB can be realized by chip mode, and the attenuation control from 1 to 31dB is realized by numerical control attenuator. It can be seen that the test results are in good agreement with the simulation results. The targets of low noise, high gain and large output power are designed and realized, and the purpose of high gain adjustable relay amplification is achieved.
【學位授予單位】：大連海事大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722;TN925.93
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