【摘要】：采用集成器件結(jié)構(gòu)和先進(jìn)工藝研制了一款等效低壓二極管。該等效低壓二極管的等效電路實(shí)質(zhì)是一個(gè)普通npn三極管和一個(gè)普通二極管并聯(lián)。這種結(jié)構(gòu)的器件的正向特性是普通二極管的正向壓降;反向特性是普通npn三極管的發(fā)射極E和集電極C之間的特性。選擇特有的版圖設(shè)計(jì)和工藝流程,可以將普通npn三極管的發(fā)射極E和集電極C之間的電壓VECO(實(shí)際也是等效低壓二極管的反向擊穿電壓)調(diào)整到5.1 V以下,該等效低壓二極管的反向漏電可達(dá)到納安級(jí),反向動(dòng)態(tài)電阻可達(dá)到10Ω以?xún)?nèi)。利用此特性,該等效低壓二極管適合于高頻千兆網(wǎng)口接口的保護(hù),可以避免傳輸信號(hào)丟失。
[Abstract]:An equivalent low voltage diode is developed by using integrated device structure and advanced technology. The equivalent circuit of the equivalent low voltage diode is a common npn transistor and a common diode in parallel. The forward characteristic of the device with this structure is the forward voltage drop of the ordinary diode and the reverse characteristic is the characteristic between the emitter E and the collector C of the ordinary npn transistor. The voltage VECO (reverse breakdown voltage of equivalent low voltage diode) between emitter E and collector C of the common npn transistor can be adjusted to less than 5.1V by selecting the unique layout design and process flow. The reverse leakage of the equivalent low voltage diode can reach the nano level and the reverse dynamic resistance can reach less than 10 惟. Using this characteristic, the equivalent low voltage diode is suitable for the protection of high frequency gigabit interface and can avoid the loss of transmission signal.
【作者單位】： 杭州士蘭集成電路有限公司;
【分類(lèi)號(hào)】：TN31
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本文編號(hào)：2188847