【摘要】：微波單片集成電路(MMIC)具有體積小、可靠性高、大量生產(chǎn)造價低等特點滿足人們對當(dāng)代通信系統(tǒng)的需求,無論在軍用領(lǐng)域還是民用領(lǐng)域都具有很強(qiáng)的吸引力。微波功率放大器(PA)是構(gòu)成相控陣?yán)走_(dá)T/R組件的重要部分,而X波段的電磁波波長短,反射率強(qiáng),應(yīng)用在該波段的雷達(dá)在軍事方面具有很大的實用價值。高功率微波放大器(HPA)一直是MMIC功率放大器研究的重點難點,HPA通常需要采用功率合成的方法實現(xiàn),輸出功率多為5W以上的水平。當(dāng)前X波段功率放大器的缺點有單管的增益不足,輸出功率小,效率低等,單管的性能制約著功率合成后HPA的性能。通過對場效應(yīng)晶體管建模技術(shù)、微波PA相關(guān)理論的深入學(xué)習(xí)研究,結(jié)合文獻(xiàn)資料,提出所要設(shè)計的微波單片集成功率放大電路的預(yù)期性能指標(biāo)。設(shè)計研究了一款X波段單管單片驅(qū)動功率放大電路,可作為5W高功率微波放大器的驅(qū)動級使用。實現(xiàn)的目標(biāo)是較高的功率輸出、較好的效率、較小的體積,較高的可靠性。課題研究設(shè)計使用臺灣WIN半導(dǎo)體公司0.25um GaAs PHEMT工藝模型,采用ADS仿真平臺完成功率放大電路的設(shè)計、仿真、驗證。涉及的關(guān)鍵技術(shù)有器件的選擇、偏置電路、負(fù)載牽引技術(shù)、匹配網(wǎng)絡(luò)等。所設(shè)計的功率放大電路工作在8-12GHz的頻段內(nèi),增益超過10dB,帶內(nèi)波動2dB,1dB壓縮點輸出功率約29dBm,功率附加效率38%,輸入輸出電壓駐波比2.5。當(dāng)雙音輸出功率為25dBm時,三階交調(diào)系數(shù)小于-30dBc。本次設(shè)計研究的功率放大電路各指標(biāo)的實現(xiàn)符合預(yù)期要求,效率、線性度、增益均良好,單管匹配,減小了體積和功耗,降低了成本,提高了可靠性。29dBm的輸出功率的實現(xiàn)為后續(xù)高功率放大器的研究設(shè)計打下了基礎(chǔ),研究成果具有一定的理論與實際應(yīng)用價值。
[Abstract]:Microwave monolithic integrated circuit (MMIC) has the characteristics of small size, high reliability and low production cost to meet the needs of modern communication systems. Microwave power amplifier (PA) is an important part of the T / R module of phased array radar. The X-band electromagnetic wave has a short wavelength and strong reflectivity. The radar used in this band has great practical value in military field. High power microwave amplifier (HPA) is always the key and difficult point in the research of MMIC power amplifier. At present, the shortcomings of X-band power amplifier are lack of gain of single transistor, low output power, low efficiency and so on. The performance of single transistor restricts the performance of HPA after power synthesis. Based on the modeling technology of field-effect transistor and the study of microwave PA theory, the expected performance index of microwave monolithic integrated power amplifier circuit is proposed. An X band monolithic drive power amplifier is designed and studied, which can be used as the driving stage of 5 W high power microwave amplifier. The goal is higher power output, better efficiency, smaller volume and higher reliability. The 0.25um GaAs PHEMT process model of Taiwan WIN Semiconductor Company and the ADS simulation platform are used to design, simulate and verify the power amplifier circuit. The key technologies involved are device selection, bias circuit, load traction technology, matching network and so on. The designed power amplifier circuit operates in the frequency band of 8-12GHz. The gain is more than 10 dB, the in-band fluctuation is 2 dB / 1 dB, the output power is about 29dBm, the additional power efficiency is 38 and the VSWR of input and output voltage is 2.5. When the dual tone output power is 25dBm, the third order intermodulation coefficient is less than -30 dBc. The realization of the power amplifier circuit in this design meets the expected requirements. The efficiency, linearity and gain are all good. The single transistor matching reduces the volume and power consumption, and reduces the cost. The realization of output power with improved reliability of .29dBm lays a foundation for the subsequent research and design of high power amplifier. The research results have certain theoretical and practical application value.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN722.75

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本文編號：2187870