【摘要】：設(shè)計(jì)了一種應(yīng)用于EEPROM的低電源電壓的片內(nèi)升壓電路。基于電壓倍乘電路,獲得兩倍于電源電壓的驅(qū)動(dòng)電壓,用來(lái)驅(qū)動(dòng)高壓電荷泵電路得到EEPROM擦寫(xiě)用的15 V高壓,實(shí)現(xiàn)EEPROM在1.3 V電壓下穩(wěn)定的工作。同時(shí),基于負(fù)溫度特性的電壓分壓電路實(shí)現(xiàn)電荷泵輸出高壓的負(fù)溫度特性,提升了存儲(chǔ)器在整個(gè)工作溫度范圍(-40℃~85℃)內(nèi)的可靠性。設(shè)計(jì)的高壓產(chǎn)生電路在0.13μm Embedded EEPROM CMOS工藝實(shí)現(xiàn),工作電壓為1.3 V~1.75 V,面積大小為600μm×80μm。
[Abstract]:An on-chip boost circuit with low power supply voltage applied to EEPROM is designed. Based on the voltage doubling circuit, the drive voltage is obtained, which is used to drive the high voltage charge pump circuit to get 15 V high voltage for EEPROM erasure, and to realize the stable operation of EEPROM at 1.3 V voltage. At the same time, the voltage divider circuit based on the negative temperature characteristic realizes the negative temperature characteristic of the charge pump output high voltage, and improves the reliability of the memory in the whole working temperature range (-40 鈩，

本文編號(hào)：2180321