寄生電感對SiC MOSFET開關(guān)特性的影響
發(fā)布時(shí)間：2018-08-09 19:24
【摘要】：隨著開關(guān)頻率的增大,寄生電感對碳化硅(SiC)器件動態(tài)開關(guān)過程的影響程度也越來越大,無法充分發(fā)揮其高速開關(guān)下低開關(guān)損耗的性能優(yōu)勢。本文采用理論定性分析與實(shí)驗(yàn)定量研究相結(jié)合的方法,考慮相關(guān)寄生電感,對SiC MOSFET基本開關(guān)電路建立數(shù)學(xué)模型,確立影響開關(guān)特性的主要因素,然后通過SiC器件高速電路雙脈沖測試平臺,對各部分寄生電感對SiC器件開關(guān)性能的影響進(jìn)行系統(tǒng)研究,揭示寄生電感對SiC MOSFET開關(guān)特性的影響規(guī)律。在此基礎(chǔ)之上,根據(jù)SiC高速開關(guān)電路實(shí)際布局的限制,在布局緊湊程度或回路走線總長度相對不變的情況下,對各部分寄生電感的匹配關(guān)系進(jìn)行研究,歸納出SiC器件開關(guān)過程受寄生參數(shù)影響的特性規(guī)律,從而指導(dǎo)SiC基高速開關(guān)電路的優(yōu)化布局設(shè)計(jì)。
[Abstract]:With the increase of switching frequency, the parasitic inductance has more and more influence on the dynamic switching process of silicon carbide (SiC) devices, which can not give full play to its performance advantage of low switching loss at high speed switch. In this paper, a mathematical model of the basic switching circuit of SiC MOSFET is established by combining theoretical qualitative analysis with quantitative experimental study and considering the parasitic inductance, and the main factors affecting the switching characteristics are established. Then the influence of parasitic inductors on the switching performance of SiC devices is studied systematically on the basis of the dual-pulse test platform for high-speed circuits of SiC devices. The influence of parasitic inductors on the characteristics of SiC MOSFET switches is revealed. On this basis, according to the limitation of SiC high speed switch circuit layout, the matching relation of parasitic inductance of each part is studied under the condition that the layout is compact or the total length of circuit line is relatively constant. The characteristics of SiC switch process affected by parasitic parameters are summarized, which can guide the optimal layout design of SiC based high speed switch circuits.
【作者單位】： 南京航空航天大學(xué)多電飛機(jī)電氣系統(tǒng)工業(yè)和信息化部重點(diǎn)實(shí)驗(yàn)室;河海大學(xué)江蘇省輸配電裝備技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家自然科學(xué)基金(51677089)資助項(xiàng)目 中央高�；究蒲袠I(yè)務(wù)費(fèi)專項(xiàng)資金(NS2015039,NS20160047)資助項(xiàng)目 江蘇省普通高校研究生科研創(chuàng)新計(jì)劃(SJLX16_0107)資助項(xiàng)目
【分類號】：TN386
[Abstract]:With the increase of switching frequency, the parasitic inductance has more and more influence on the dynamic switching process of silicon carbide (SiC) devices, which can not give full play to its performance advantage of low switching loss at high speed switch. In this paper, a mathematical model of the basic switching circuit of SiC MOSFET is established by combining theoretical qualitative analysis with quantitative experimental study and considering the parasitic inductance, and the main factors affecting the switching characteristics are established. Then the influence of parasitic inductors on the switching performance of SiC devices is studied systematically on the basis of the dual-pulse test platform for high-speed circuits of SiC devices. The influence of parasitic inductors on the characteristics of SiC MOSFET switches is revealed. On this basis, according to the limitation of SiC high speed switch circuit layout, the matching relation of parasitic inductance of each part is studied under the condition that the layout is compact or the total length of circuit line is relatively constant. The characteristics of SiC switch process affected by parasitic parameters are summarized, which can guide the optimal layout design of SiC based high speed switch circuits.
【作者單位】： 南京航空航天大學(xué)多電飛機(jī)電氣系統(tǒng)工業(yè)和信息化部重點(diǎn)實(shí)驗(yàn)室;河海大學(xué)江蘇省輸配電裝備技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家自然科學(xué)基金(51677089)資助項(xiàng)目 中央高�；究蒲袠I(yè)務(wù)費(fèi)專項(xiàng)資金(NS2015039,NS20160047)資助項(xiàng)目 江蘇省普通高校研究生科研創(chuàng)新計(jì)劃(SJLX16_0107)資助項(xiàng)目
【分類號】：TN386
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1 楊柳,郭小波,王澤毅;三維寄生電感提取中一種多右端方程求解方法[J];電子學(xué)報(bào);2004年11期
2 王惠娟;萬里兮;呂W，
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