發(fā)布時間：2018-08-03 09:31

【摘要】：隨著有源相控陣?yán)走_(dá)高集成度和小型化的發(fā)展,對功率放大器的輸出功率、效率、尺寸等指標(biāo)也提出了更高的要求�；诘谌雽�(dǎo)體材料氮化鎵(GaN)的單片微波集成功率放大器以其具有高功率密度、高效率、耐高溫以及較強的抗輻射能力等優(yōu)點正成為全球研究的前沿和熱點,具有重要的研究價值和意義。而隨著下一代雷達(dá)系統(tǒng)工作頻率的提高,發(fā)展毫米波GaN功率放大器已迫在眉睫。本文在研究了GaN高電子遷移率晶體管(HEMT)的物理模型及無源器件的基礎(chǔ)上,設(shè)計并制作了Ka波段GaN HEMT單片微波集成功率放大器,放大器采用二級四路結(jié)構(gòu),最終芯片實物在片測試取得了較好的結(jié)果。主要工作如下:本文首先分析了功率放大器中的有源器件GaN HEMT的物理結(jié)構(gòu)及其工作原理;分析了單片微波集成電路設(shè)計中常用的微帶線、電阻、電感、電容等無源器件,利用HFSS進(jìn)行建模與仿真,分析得到無源器件的物理尺寸與器件取值、品質(zhì)因數(shù)Q的關(guān)系。在以上研究基礎(chǔ)上,完成了Ka波段GaN HEMT單片微波集成功率放大器的設(shè)計,主要涉及單級功率放大器設(shè)計、多級放大器的拓?fù)浣Y(jié)構(gòu)設(shè)計、穩(wěn)定性電路設(shè)計、匹配電路以及功率合成網(wǎng)絡(luò)的設(shè)計等。結(jié)合相關(guān)的流片工藝,利用ADS進(jìn)行了電路的整體仿真,并通過ADS自帶的Momentum工具進(jìn)行了版圖仿真和電磁場聯(lián)合仿真,最終設(shè)計的功率放大器取得到了較好的結(jié)果。最后,對設(shè)計的功率放大器完成了芯片實物制作和在片測試,測試結(jié)果顯示在33.5GHz~34.5GHz工作頻帶內(nèi),放大器輸出功率大于34dBm,增益大于7dB,帶內(nèi)增益平坦度優(yōu)于?0.5dB,功率附加效率高于8%,在34.2GHz頻點處,輸出功率最高達(dá)到34.9dBm,增益7.9dB,功率附加效率9.2%。
[Abstract]:With the development of high integration and miniaturization of active phased array radar, the output power, efficiency and size of power amplifier are required to be higher. The monolithic microwave integrated power amplifier based on the third generation semiconductor material gallium nitride (GaN) is becoming a hot spot in the world because of its advantages of high power density, high efficiency, high temperature resistance and strong radiation resistance. It has important research value and significance. With the improvement of the frequency of the next generation radar system, the development of millimeter wave GaN power amplifier is imminent. Based on the study of the physical model and passive devices of GaN high electron mobility transistor (HEMT), a Ka-band GaN HEMT monolithic microwave integrated power amplifier is designed and fabricated. The amplifier adopts a two-stage four-channel structure. Finally, good results are obtained in the chip test. The main work is as follows: firstly, the physical structure and working principle of the active device GaN HEMT in the power amplifier are analyzed, and the passive devices such as microstrip line, resistance, inductance, capacitance and so on in the design of monolithic microwave integrated circuit are analyzed. Using HFSS to model and simulate, the relationship between physical size and device value, quality factor Q of passive device is obtained. Based on the above research, the design of Ka-band GaN HEMT monolithic microwave integrated power amplifier is completed, which mainly involves the design of single-stage power amplifier, the topology design of multi-stage amplifier and the design of stability circuit. The design of matching circuit and power synthesis network. The whole circuit is simulated by ADS, and the layout simulation and electromagnetic field simulation are carried out by using the Momentum tool of ADS. The result of the power amplifier design is satisfactory. Finally, the designed power amplifier is fabricated and tested in the chip. The test results are shown in the 33.5GHz~34.5GHz operating band. The output power of the amplifier is greater than 34dBm, the gain is larger than 7dB.The in-band gain flatness is better than 0.5 dB, and the power additional efficiency is higher than 8. At the 34.2GHz frequency point, the output power is up to 34.9dBm, the gain is 7.9dB, and the power additional efficiency is 9.2dB.
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN722.75

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本文編號：2161323