【摘要】：半導(dǎo)體紫外光電探測(cè)器在民用、軍事以及商業(yè)方面都有著廣泛的應(yīng)用,近年來(lái)引起了人們的極大研究興趣。ZnO由于其優(yōu)異的光學(xué)以及電學(xué)性質(zhì),在紫外光電探測(cè)器領(lǐng)域有著廣泛的應(yīng)用前景。全透明是電子產(chǎn)品未來(lái)發(fā)展的必然趨勢(shì),因此本文新提出在價(jià)格低廉的普通玻璃襯底上、常溫下制備全透明ZnO薄膜,以ZnO紫外光電探測(cè)器的制備及其光電性質(zhì)的研究為中心展開,對(duì)ZnO薄膜本身的制備和表征、紫外探測(cè)器的制備和表征分別進(jìn)行了深入的研究。首先選用磁控濺射法在普通玻璃襯底上制備ZnO薄膜,利用XRD以及PL分析比較了不同工藝參數(shù)下制備的樣品的薄膜質(zhì)量。先后研究了濺射功率、濺射壓強(qiáng)和退火處理對(duì)薄膜結(jié)晶質(zhì)量的影響,經(jīng)過(guò)分析比較XRD的特征衍射峰強(qiáng)度、半寬高、晶粒尺寸大小,以及比較PL譜中由缺陷引起的峰的強(qiáng)弱,得出最佳工藝參數(shù)。隨后在ZnO薄膜上制備MSM結(jié)構(gòu)紫外光電探測(cè)器,探索不同功函數(shù)的金屬電極、退火與否以及不同的退火氣氛、不同的叉指對(duì)數(shù)對(duì)探測(cè)器性能的影響,性能測(cè)試包括Ⅰ-Ⅴ特性曲線、開關(guān)比以及紫外光響應(yīng)度、紫外可見光抑制比等。所制備的ZnO紫外探測(cè)器的成本低廉,性能良好,在可見光區(qū)域透過(guò)率高于90%,實(shí)現(xiàn)了在普通玻璃襯底上、常溫下制備全透明ZnO紫外光電探測(cè)器。在保證紫外光電探測(cè)器性能的同時(shí),成本大大減小,所開展的工作對(duì)ZnO薄膜在光電領(lǐng)域的應(yīng)用具有一定的意義。
[Abstract]:Semiconductor UV photodetectors have been widely used in civil, military and commercial fields. In recent years, ZnO has attracted great interest because of its excellent optical and electrical properties. It has a wide application prospect in the field of UV photodetector. Full transparency is an inevitable trend in the future development of electronic products. Therefore, it is proposed in this paper to prepare fully transparent ZnO thin films on low price ordinary glass substrates at room temperature. The preparation and characterization of ZnO thin films and the preparation and characterization of UV detectors were studied in detail, focusing on the preparation and photoelectric properties of ZnO photodetectors. Firstly, ZnO thin films were prepared on ordinary glass substrates by magnetron sputtering. The quality of the films prepared under different technological parameters was analyzed and compared by XRD and PL. The effects of sputtering power, sputtering pressure and annealing treatment on the crystallization quality of XRD films were studied successively. The characteristic diffraction peak intensity, half width, grain size, and the intensity of defects in PL spectra were analyzed and compared. The optimum process parameters are obtained. Then the MSM structure UV photodetectors were fabricated on ZnO thin films. The effects of metal electrodes with different work functions, annealing or not, different annealing atmosphere and different interDigital logarithms on the performance of the detectors were investigated. The performance tests include I-V characteristic curve, switching ratio, UV light responsivity, UV-Vis suppression ratio and so on. The ZnO UV detector has the advantages of low cost and good performance. The transmittance of the UV detector is higher than 90 in the visible region. The transparent ZnO UV photodetector is fabricated on the ordinary glass substrate at room temperature. The cost is greatly reduced while the performance of UV photodetectors is guaranteed. The work carried out has a certain significance for the application of ZnO thin films in the field of photoelectricity.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN23

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本文編號(hào)：2154627