【摘要】：為了確定激光晶體在不同溫度下的自發(fā)輻射光譜(熒光譜),實(shí)驗(yàn)研究了閾值附近微片激光器的輸出光譜特性。當(dāng)抽運(yùn)功率略小于閾值時(shí),微片激光器輸出經(jīng)干涉的自發(fā)輻射光;當(dāng)抽運(yùn)功率大于閾值時(shí),微片激光器輸出激光。測量了激光閾值與晶體溫控的關(guān)系,結(jié)果表明激光閾值隨晶體溫度的升高而增加,其變化率為0.017 W/℃。在不同溫控條件下,對閾值以下的自發(fā)輻射光譜包絡(luò)進(jìn)行了擬合測量,結(jié)果表明隨著晶體溫度的升高自發(fā)輻射光譜包絡(luò)峰值降低,下降率為0.681%/℃;光譜包絡(luò)中心波長發(fā)生紅移,漂移率為3.1pm/℃。
[Abstract]:In order to determine the spontaneous emission spectra (fluorescence spectra) of laser crystals at different temperatures, the output spectra of microchip lasers near the threshold are experimentally studied. When the pump power is slightly lower than the threshold, the microchip laser outputs the interference spontaneous emission, and when the pump power is greater than the threshold, the microchip laser outputs the laser. The relationship between laser threshold and crystal temperature control is measured. The results show that the laser threshold increases with the increase of crystal temperature, and the change rate is 0.017 W / 鈩，

本文編號：2154174