基于內聚力模型的紅外焦平面探測器失效分析
發(fā)布時間：2018-07-29 16:37
【摘要】：紅外焦平面探測器(Infrared Focal Plane Array,IRFPA)是航空航天紅外遙感、氣象、國防和科學實驗儀器等領域實現(xiàn)探測和追蹤的重要組件。為提高靈敏度和信噪比,In Sb面陣探測器需要通過制冷設備從300K的室溫迅速地下降至液氮溫度(77K)。然而在熱沖擊過程中,由于InSb面陣探測器特定的層狀結構、低溫工作環(huán)境和各材料間線膨脹系數(shù)等材料參數(shù)屬性的不同性,將會在InSb面陣探測器的器件內部引起過應力/變,進而導致光敏元芯片(InSb)分層,甚至會有裂紋萌生、擴展。上述分層和碎裂問題嚴重制約著紅外焦平面探測器的可靠性和適用性,已經成為紅外焦平面探測器批量生產中的主要障礙之一。本文是以課題組前期對InSb面陣探測器的結構仿真為背景,基于有限元分析和雙線性內聚力模型相結合,在128×128陣列In Sb焦平面探測器的等效有限元模型中選取出Von Mises應力最大的N電極區(qū)域進行預置裂紋處理,即在N電極和InSb芯片的接觸面內以及InSb芯片的內部添加內聚力元素并且合理地選取InSb芯片的裂紋擴展參數(shù),進而形成預置裂紋,模擬出InSb光敏元芯片分層、碎裂的裂紋過程以及分層、碎裂失效后的應力/變分布特征。InSb芯片的分層失效數(shù)據顯示,在處于同一位置的兩內聚節(jié)點的應變數(shù)據中,只有Z軸上的相對應變量是隨著加載時間慢慢增大的,驗證了本文選取I型失效模式研究InSb芯片分層失效中裂紋擴展的正確性。采用降溫載荷模式的實驗結果表明:In Sb面陣探測器的形變方向與實際的形變方向是相反的,尤其是在InSb光敏元芯片與In柱陣列的連接處較為明顯。鑒于材料參數(shù)的線彈性,調整參考溫度并且采用升溫載荷模式,模擬出分層后N電極正上方區(qū)域的In Sb芯片呈帶狀凸起,N電極附近局部剖面呈現(xiàn)對稱的鐘型分布,而且InSb芯片上表面形成的凸起和凹陷部分呈周期性的二維分布,上述仿真結果幾乎與實際的InSb面陣探測器形變照片是完全匹配的。在InSb芯片發(fā)生分層和碎裂失效后,表面上均存在著較大的應力梯度,其中應力梯度密集區(qū)域和裂縫最大值區(qū)域是和實際的InSb芯片碎裂最大概率區(qū)域相吻合的。最后,給出一種新型三維裂紋擴展模擬方法,詳細地給出了添加內聚力元素的APDL程序,并對計算過程中出現(xiàn)的不收斂性做出簡要的分析。本文給出了課題組前期分析所不具有的InSb面陣探測器結構分析理論,而且演示了In Sb芯片的裂紋萌生、擴展以及裂紋擴展后的應力/變分布特征,完善了課題組前期的InSb面陣探測器結構分析的理論體系,為研究器件的失效裂紋擴展提供了參考依據。
[Abstract]:Infrared focal plane detector (Infrared Focal Plane) is an important component in the field of aerospace infrared remote sensing, meteorology, national defense and scientific experimental instruments. In order to improve the sensitivity and signal-to-noise ratio (SNR) of InSb array detectors, the temperature of liquid nitrogen (77K) has to be rapidly reduced from 300K to 77K. However, in the process of thermal shock, due to the different properties of material parameters such as the specific layered structure of the InSb array detector, the working environment at low temperature and the coefficient of linear expansion among different materials, the overstress / variation will be caused in the device of the InSb array detector. In turn, the Guang Min meta-chip (InSb) delamination and even crack initiation and propagation. The problem of delamination and fragmentation has seriously restricted the reliability and applicability of the infrared focal plane detector and has become one of the main obstacles in the mass production of the infrared focal plane detector. This paper is based on the structural simulation of InSb array detector in the early stage of the research group, based on the combination of finite element analysis and bilinear cohesive force model. In the equivalent finite element model of 128 脳 128 array in Sb focal plane detector, the N electrode region with the largest Von Mises stress is selected for pre-crack treatment. That is to say, adding cohesion elements into the interface between N electrode and InSb chip and inside the InSb chip, and selecting the crack growth parameters of InSb chip reasonably, and then forming the preset crack, and simulating the delamination of InSb Guang Min meta-chip. Fracture process and delamination, stress / variation distribution characteristics after fracture failure. The delamination failure data of InSb chip show that, in the strain data of two cohesive nodes in the same position, Only the corresponding variables on the Z axis increase with the loading time, which verifies the correctness of the mode I failure mode to study the crack propagation in the delamination failure of InSb chips. The experimental results using the cooling load mode show that the deformation direction of the InSb in SB array detector is opposite to that of the actual one, especially at the junction between the InSb Guang Min element chip and the in column array. In view of the linear elasticity of the material parameters, adjusting the reference temperature and adopting the temperature rise load mode, it is simulated that the in SB chip in the upper region of the N electrode after delamination shows a symmetrical bell-like distribution near the local profile of the N electrode. Moreover, the protrusions and depressions formed on the surface of InSb chip show periodic two-dimensional distribution. The simulation results are almost identical to the actual deformation photos of InSb array detectors. After the delamination and fracture failure of InSb chip, there is a large stress gradient on the surface, and the stress gradient dense region and the crack maximum region are consistent with the actual maximum probability region of InSb chip fragmentation. Finally, a new three-dimensional crack propagation simulation method is presented, and the APDL program of adding cohesive force elements is given in detail, and the non-convergence in the calculation process is analyzed briefly. In this paper, the structure analysis theory of InSb array detector is presented, which is not available in the previous analysis of our group, and the characteristics of crack initiation, propagation and stress / variation distribution after crack propagation are demonstrated. The theoretical system for structural analysis of InSb array detectors in the early stage of the research group is perfected, which provides a reference for studying the failure crack propagation of the devices.
【學位授予單位】：河南科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN215
本文編號：2153311
[Abstract]:Infrared focal plane detector (Infrared Focal Plane) is an important component in the field of aerospace infrared remote sensing, meteorology, national defense and scientific experimental instruments. In order to improve the sensitivity and signal-to-noise ratio (SNR) of InSb array detectors, the temperature of liquid nitrogen (77K) has to be rapidly reduced from 300K to 77K. However, in the process of thermal shock, due to the different properties of material parameters such as the specific layered structure of the InSb array detector, the working environment at low temperature and the coefficient of linear expansion among different materials, the overstress / variation will be caused in the device of the InSb array detector. In turn, the Guang Min meta-chip (InSb) delamination and even crack initiation and propagation. The problem of delamination and fragmentation has seriously restricted the reliability and applicability of the infrared focal plane detector and has become one of the main obstacles in the mass production of the infrared focal plane detector. This paper is based on the structural simulation of InSb array detector in the early stage of the research group, based on the combination of finite element analysis and bilinear cohesive force model. In the equivalent finite element model of 128 脳 128 array in Sb focal plane detector, the N electrode region with the largest Von Mises stress is selected for pre-crack treatment. That is to say, adding cohesion elements into the interface between N electrode and InSb chip and inside the InSb chip, and selecting the crack growth parameters of InSb chip reasonably, and then forming the preset crack, and simulating the delamination of InSb Guang Min meta-chip. Fracture process and delamination, stress / variation distribution characteristics after fracture failure. The delamination failure data of InSb chip show that, in the strain data of two cohesive nodes in the same position, Only the corresponding variables on the Z axis increase with the loading time, which verifies the correctness of the mode I failure mode to study the crack propagation in the delamination failure of InSb chips. The experimental results using the cooling load mode show that the deformation direction of the InSb in SB array detector is opposite to that of the actual one, especially at the junction between the InSb Guang Min element chip and the in column array. In view of the linear elasticity of the material parameters, adjusting the reference temperature and adopting the temperature rise load mode, it is simulated that the in SB chip in the upper region of the N electrode after delamination shows a symmetrical bell-like distribution near the local profile of the N electrode. Moreover, the protrusions and depressions formed on the surface of InSb chip show periodic two-dimensional distribution. The simulation results are almost identical to the actual deformation photos of InSb array detectors. After the delamination and fracture failure of InSb chip, there is a large stress gradient on the surface, and the stress gradient dense region and the crack maximum region are consistent with the actual maximum probability region of InSb chip fragmentation. Finally, a new three-dimensional crack propagation simulation method is presented, and the APDL program of adding cohesive force elements is given in detail, and the non-convergence in the calculation process is analyzed briefly. In this paper, the structure analysis theory of InSb array detector is presented, which is not available in the previous analysis of our group, and the characteristics of crack initiation, propagation and stress / variation distribution after crack propagation are demonstrated. The theoretical system for structural analysis of InSb array detectors in the early stage of the research group is perfected, which provides a reference for studying the failure crack propagation of the devices.
【學位授予單位】：河南科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN215
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