硅晶圓激光切割頭及切割性能的研究
發(fā)布時間：2018-07-29 12:29
【摘要】：硅晶圓是一種常用的半導體材料。傳統(tǒng)的硅晶圓切割方式為高速金剛石片接觸式切割,切割過程中容易產生崩邊等缺陷。激光切割作為非接觸式切割方法,能夠有效控制因接觸時應力不均勻而產生的缺陷。首先,根據(jù)雙振鏡激光切割頭的運動原理及光學系統(tǒng)基本原理,利用solidworks軟件設計了硅晶圓切割專用切割頭。主要設計內容包括切割頭光纖連接模塊、準直模塊及機器人連接模塊等。該切割頭切割范圍為200mm×200mm、切割精度為±0.05mm。經(jīng)實際硅晶圓切割驗證,本次設計雙振鏡激光切割頭滿足了設計及生產要求。利用設計的雙振鏡激光切割頭進行硅晶圓的皮秒激光切割試驗,通過改變皮秒激光輸出功率,激光脈沖頻率及切割速度等切割參數(shù)進行了切槽及隱晶切割試驗。硅晶圓的切槽試驗結果表明,切槽寬度與切槽深度隨激光輸出功率的增加而增大,隨激光脈沖頻率的增加而增大,隨切割速度的增加而減少;切槽的掛渣高度及飛濺寬度隨激光輸出功率的增加而增大,隨激光脈沖頻率的增加而增大,隨切割速度的增加而減小;通過正交試驗,獲得最佳工藝參數(shù)為激光功率30W、切割速度100mm/s、激光脈沖頻率40kHz。通過掃描電子顯微鏡(SEM)及能譜分析儀(EDS)等對最佳工藝參數(shù)下的切槽進行分析,由分析結果可知,雖然皮秒激光切割過程中能量密度較高,但切槽周圍幾乎沒有發(fā)現(xiàn)氧化現(xiàn)象,切槽周圍物質的物理性化學性能得到了保證。硅晶圓的隱晶切割試驗結果表明,最佳切割工藝參數(shù)為激光輸出功率0.88W、激光脈沖頻率80kHz、切割速度300mm/s;與硅晶圓的傳統(tǒng)切縫崩邊尺寸(70μm)比較,隱晶切割的崩邊尺寸(40μm)明顯減小,約減小了42%;與硅晶圓的水導激光切割的崩邊尺寸(42μm)相比,隱晶切割的崩邊尺寸減少了約5%。為了比較激光切割方法對硅晶圓的切割質量影響,采用了水導激光切割方法對硅晶圓進行了切割試驗,試驗結果表明,水導激光切槽最佳切割工藝參數(shù)為水壓13MPa、功率2W、切割速度500mm/min,水導激光切斷最佳工藝參數(shù)為水壓13MPa、功率2W、切割速度200mm/min;在最佳切割工藝參數(shù)下,切縫無熱影響區(qū)、切縫周圍無飛濺區(qū)、切縫邊緣平整、切縫垂直度好;根據(jù)切縫斷面的特征,將切縫斷面分成了三個區(qū)域,區(qū)域1(切縫上表面附近)、區(qū)域2(切縫中間區(qū)域)及區(qū)域3(切縫下表面附近),區(qū)域1的表面粗糙度約為8.037-14.621μm、區(qū)域2的表面粗糙度約為4.908-6.640μm、區(qū)域3的表面粗糙度約為6.344-7.108μm,由結果可知,三個區(qū)域的表面粗糙度差別較大,區(qū)域2的粗糙度最小,區(qū)域3次之,區(qū)域1的粗糙度最大;水導激光切縫崩邊尺寸約為42μm,與傳統(tǒng)切割崩邊尺寸(70μm)比較,減小了40%。
[Abstract]:Silicon wafer is a common semiconductor material. The traditional silicon wafer cutting method is high speed diamond wafer contact cutting. As a non-contact cutting method, laser cutting can effectively control the defects caused by non-uniform stress in contact. Firstly, according to the principle of motion and optical system of double-mirror laser cutting head, the special cutting head for silicon wafer cutting is designed by using solidworks software. The main design contents include optical fiber connection module, collimation module and robot connection module. The cutting range of the cutting head is 200mm 脳 200mm, and the cutting precision is 鹵0.05mm. Through the verification of silicon wafer cutting, the design of double mirror laser cutting head meets the requirements of design and production. The picosecond laser cutting test of silicon wafer was carried out by using the designed double mirror laser cutting head. The cutting and implicit crystal cutting experiments were carried out by changing the cutting parameters such as the output power of picosecond laser, the laser pulse frequency and the cutting speed. The results show that the notch width and depth increase with the increase of laser output power, increase with the increase of laser pulse frequency, and decrease with the increase of cutting speed. The slagging height and spatter width increase with the increase of laser output power, increase with the increase of laser pulse frequency and decrease with the increase of cutting speed. The optimum technological parameters are as follows: laser power 30W, cutting speed 100mm / s, laser pulse frequency 40kHz. Through scanning electron microscope (SEM) and energy dispersive analyzer (EDS) to analyze the groove under the optimum technological parameters, the results show that although the energy density is high in the process of picosecond laser cutting, there is almost no oxidation around the notch. The physical and chemical properties of the material around the groove are guaranteed. The experimental results show that the optimum cutting parameters are laser output power of 0.88 W, laser pulse frequency of 80 kHz and cutting speed of 300 mm / s. Compared with the conventional slit size of silicon wafer (70 渭 m), the dimension (40 渭 m) of cryptocrystalline cutting is obviously reduced. Compared with the size (42 渭 m) of the water-conducting laser cutting of silicon wafers, the size of edge breaking is reduced by about 5%. In order to compare the effect of laser cutting method on the cutting quality of silicon wafer, the water conduction laser cutting method was used to cut silicon wafer. The optimum cutting parameters are water pressure 13MPa, power 2W, cutting speed 500mm / min. The optimum parameters of water-conducting laser cutting are water pressure 13MPa, power 2W, cutting speed 200mm / min. There is no splash area around the joint, the edge of the joint is flat and the seam is perpendicular. According to the characteristics of the section of the cutting joint, the section is divided into three regions. Region 1 (near the top surface of the notch), region 2 (middle area of the notch) and region 3 (near the surface of the cut joint), the surface roughness of region 1 is about 8.037-14.621 渭 m, the surface roughness of region 2 is about 4.908-6.640 渭 m, the surface roughness of region 3 is about 6.344-7.108 渭 m, the results show that the surface roughness of region 1 is about 8.037-14.621 渭 m, and that of region 2 is about 6.344-7.108 渭 m. The surface roughness of the three regions is different greatly, the roughness of region 2 is the smallest, the roughness of region 3 is the second, and the roughness of region 1 is the largest, and the size of water conduction laser cutting seam is about 42 渭 m, which is reduced by 40% compared with the traditional cutting dimension (70 渭 m).
【學位授予單位】：沈陽工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN305.1
本文編號：2152679
[Abstract]:Silicon wafer is a common semiconductor material. The traditional silicon wafer cutting method is high speed diamond wafer contact cutting. As a non-contact cutting method, laser cutting can effectively control the defects caused by non-uniform stress in contact. Firstly, according to the principle of motion and optical system of double-mirror laser cutting head, the special cutting head for silicon wafer cutting is designed by using solidworks software. The main design contents include optical fiber connection module, collimation module and robot connection module. The cutting range of the cutting head is 200mm 脳 200mm, and the cutting precision is 鹵0.05mm. Through the verification of silicon wafer cutting, the design of double mirror laser cutting head meets the requirements of design and production. The picosecond laser cutting test of silicon wafer was carried out by using the designed double mirror laser cutting head. The cutting and implicit crystal cutting experiments were carried out by changing the cutting parameters such as the output power of picosecond laser, the laser pulse frequency and the cutting speed. The results show that the notch width and depth increase with the increase of laser output power, increase with the increase of laser pulse frequency, and decrease with the increase of cutting speed. The slagging height and spatter width increase with the increase of laser output power, increase with the increase of laser pulse frequency and decrease with the increase of cutting speed. The optimum technological parameters are as follows: laser power 30W, cutting speed 100mm / s, laser pulse frequency 40kHz. Through scanning electron microscope (SEM) and energy dispersive analyzer (EDS) to analyze the groove under the optimum technological parameters, the results show that although the energy density is high in the process of picosecond laser cutting, there is almost no oxidation around the notch. The physical and chemical properties of the material around the groove are guaranteed. The experimental results show that the optimum cutting parameters are laser output power of 0.88 W, laser pulse frequency of 80 kHz and cutting speed of 300 mm / s. Compared with the conventional slit size of silicon wafer (70 渭 m), the dimension (40 渭 m) of cryptocrystalline cutting is obviously reduced. Compared with the size (42 渭 m) of the water-conducting laser cutting of silicon wafers, the size of edge breaking is reduced by about 5%. In order to compare the effect of laser cutting method on the cutting quality of silicon wafer, the water conduction laser cutting method was used to cut silicon wafer. The optimum cutting parameters are water pressure 13MPa, power 2W, cutting speed 500mm / min. The optimum parameters of water-conducting laser cutting are water pressure 13MPa, power 2W, cutting speed 200mm / min. There is no splash area around the joint, the edge of the joint is flat and the seam is perpendicular. According to the characteristics of the section of the cutting joint, the section is divided into three regions. Region 1 (near the top surface of the notch), region 2 (middle area of the notch) and region 3 (near the surface of the cut joint), the surface roughness of region 1 is about 8.037-14.621 渭 m, the surface roughness of region 2 is about 4.908-6.640 渭 m, the surface roughness of region 3 is about 6.344-7.108 渭 m, the results show that the surface roughness of region 1 is about 8.037-14.621 渭 m, and that of region 2 is about 6.344-7.108 渭 m. The surface roughness of the three regions is different greatly, the roughness of region 2 is the smallest, the roughness of region 3 is the second, and the roughness of region 1 is the largest, and the size of water conduction laser cutting seam is about 42 渭 m, which is reduced by 40% compared with the traditional cutting dimension (70 渭 m).
【學位授予單位】：沈陽工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN305.1
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