【摘要】：新器件、新材料和新工藝不斷推動著集成電路按照摩爾定律快速發(fā)展。越來越高的集成度,越來越小的特征尺寸和越來越大的晶圓面積對超精密加工技術(shù)提出了更高的挑戰(zhàn)�；瘜W機械平坦化(chemical mechanical planarization,簡稱CMP)作為目前應用最廣泛的全局平坦化方法一直是研究的熱點。拋光液是整個CMP工藝中最主要的耗材,其性能的好壞直接決定著整個晶圓的全局平坦化效果。河北工業(yè)大學微電子研究所自主研發(fā)的FA/O系列銅布線堿性拋光液在不加BTA的基礎(chǔ)上,得到了很好的平坦化效果。能夠有效解決碟形坑、腐蝕坑和表面粗糙度大的技術(shù)難題,并且對設(shè)備的腐蝕性弱,環(huán)保性好,具有非常好的產(chǎn)業(yè)化前景。然而該系列堿性拋光液也存在著所有拋光液都存在的共性問題,即穩(wěn)定性差。FA/O系列銅布線堿性拋光液的穩(wěn)定性主要包含兩個方面:(1)一方面是拋光液原液的穩(wěn)定性,原液指的是沒有經(jīng)過稀釋和加入氧化劑的拋光液,各組分濃度較高,使用時需要用大量去離子水稀釋。(2)另一方面是拋光液使用液的穩(wěn)定性,使用液指的是經(jīng)過稀釋和加入氧化劑之后直接用來使用的拋光液。穩(wěn)定性問題得不到解決,拋光液無法實現(xiàn)產(chǎn)業(yè)化。針對堿性拋光液穩(wěn)定性問題,本文主要做了以下研究:(1)首先,分析了原液的不穩(wěn)定機理。通過單因素實驗研究了螯合劑濃度、活性劑濃度、SiO2磨料濃度及配置工藝對原液穩(wěn)定性的影響。(2)然后,分析了使用液的不穩(wěn)定機理。通過正交實驗研究了H2O2氧化劑濃度、螯合劑濃度對使用液穩(wěn)定性的影響。(3)另外,分析了H2O2穩(wěn)定劑的作用機理。研究了不同類型H2O2穩(wěn)定劑對使用液穩(wěn)定性的影響。(4)最后,研究了不同類型螯合劑對拋光液使用液穩(wěn)定性的影響。最終在前人的研究基礎(chǔ)上,進一步延長了原液的穩(wěn)定時間,同時也有效延長了使用液的穩(wěn)定時間。原液穩(wěn)定半年以上,粗拋液穩(wěn)定12小時以上,精拋液穩(wěn)定24小時以上,基本可以滿足產(chǎn)業(yè)化應用的要求。
[Abstract]:New devices, new materials and new technologies have continuously promoted the rapid development of integrated circuits in accordance with Moore's law. The increasing integration, smaller and smaller feature size and increasing wafer area have challenged the ultra precision machining technology. Chemical mechanical planarization (chemical mechanical planarization, referred to as CMP) is currently used as the present. The most widely used global planarization method has always been the hot spot of research. The polishing liquid is the most important material in the whole CMP process. Its performance is directly determined by the overall planarization effect of the whole wafer. The FA/O series copper wiring alkaline polishing liquid developed by the Institute of microelectronics of Hebei University of Technology has been obtained on the basis of without BTA. It has good flatting effect. It can effectively solve the technical problems of big dish pit, corrosion pit and surface roughness, and it has weak corrosion to the equipment, good environmental protection, and has a very good industrialization prospect. However, this series of alkaline polishing liquid also exists the common problem of all polishing liquid, that is,.FA/O series copper wiring with poor stability. The stability of alkaline polishing liquid mainly consists of two aspects: (1) the stability of the raw liquid of the polishing liquid on the one hand, the original liquid refers to the polishing solution without dilution and oxidizing agent. The concentration of each component is higher and the use of a large amount of deionized water is needed to dilute the solution. (2) the other is the stability of the use liquid of the polishing solution, and the use of liquid refers to the process. The stability problem can not be solved and the polishing solution can not be industrialized. In this paper, the following research is made on the stability problem of alkaline polishing liquid. (1) first, the instability mechanism of the original liquid is analyzed. The concentration of chelating agent, the concentration of active agent, and Si are studied by the single factor experiment. The effect of O2 abrasive concentration and configuration process on the stability of the original liquid. (2) the instability mechanism of the liquid was analyzed. The influence of the concentration of H2O2 oxidant and the concentration of chelating agent on the stability of the use liquid was studied by orthogonal experiment. (3) the action mechanism of H2O2 stabilizers was analyzed. The stability of different types of H2O2 stabilizers for the use of liquid stability was studied. 4. (4) finally, the effects of different types of chelating agents on the stability of the liquid use liquid were studied. On the basis of previous studies, the stability time of the original liquid was further extended and the stability time of the liquid was prolonged. The crude liquid was stable for more than half a year, the crude liquid was stable for more than 12 hours and the polishing liquid was stable for 24 hours. On the other hand, it can basically meet the requirements of industrial application.
【學位授予單位】：河北工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN305.2

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1 蔡婷;劉玉嶺;王辰偉;陳蕊;高嬌嬌;;弱堿性多羥多胺拋光液穩(wěn)定性[J];微納電子技術(shù);2013年12期

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本文編號：2152626