基于棱鏡擴束的光柵外腔半導(dǎo)體激光器的研究
發(fā)布時間:2018-07-26 07:38
【摘要】:外腔半導(dǎo)體激光器在縱模模式、激光線寬、調(diào)諧范圍、波長穩(wěn)定度等方面具有突出優(yōu)點,在光頻標、高分辨光譜、原子物理學(xué)等科學(xué)領(lǐng)域有著廣泛的應(yīng)用。激光器的線寬作為一個很重要的指標,一直受到了人們的關(guān)注。在本文中,利用棱鏡擴束的新方案被提出用于外腔半導(dǎo)體激光器線寬的壓窄。最開始介紹了激光二極管的基本工作原理,分析了半導(dǎo)體二極管外腔對線寬壓窄的作用,同時介紹了光柵作用下連續(xù)可調(diào)等理論,隨后對棱鏡擴束原理與色散壓窄線寬進行了研究,并設(shè)計和搭建了基于棱鏡擴束的光柵外腔半導(dǎo)體激光器,給出了設(shè)計方案和機械圖紙,并完成了加工和組裝。建立了激光器一般主動穩(wěn)頻的數(shù)學(xué)模型,對穩(wěn)頻模型進行了仿真,通過雙重PID控制改進了穩(wěn)頻鎖定方案,實現(xiàn)了激光器的長時間鎖定。對激光器的一般性能進行了數(shù)據(jù)記錄,得到了注入電流、控溫溫度、激光功率、輸出波長四個參量之間的關(guān)系。最后利用拍頻實驗與自外差實驗,對比了改進型的激光器與原有激光器之間的輸出激光線寬,進一步證實了棱鏡擴束對外腔半導(dǎo)體激光器壓窄線寬的貢獻。具體包括以下幾個方面:1.概述了外腔半導(dǎo)體激光器的工作原理。首先分析了激光二極管激發(fā)激光的機理,通過對二極管內(nèi)腔與擴展外腔的理論分析和計算,介紹了外腔在調(diào)諧和線寬壓窄中的貢獻,然后通過對光柵基本方程的介紹,分析了其一般的調(diào)諧過程,并給出了機械設(shè)計上實現(xiàn)連續(xù)可調(diào)的方案。其次,介紹了外腔半導(dǎo)體激光器中的濾波方法,主要通過色散濾波器件——棱鏡擴束器與光柵的建模分析,深入探討了色散對線寬壓窄的作用,通過對線寬表達式的深入探討,最后計算了棱鏡擴束的光柵外腔半導(dǎo)體激光器線寬公式。2.介紹了基于棱鏡擴束外腔半導(dǎo)體激光器的實現(xiàn)方案,以及選擇與確定了激光器各個組件的參數(shù),詳細地分析了各個部件的安裝方式和機械結(jié)構(gòu)需求,然后利用SolidWorks軟件設(shè)計了激光器的機械結(jié)構(gòu),完成了機械加工與組裝。其次分析了激光器控制電路組成,著重介紹了半導(dǎo)體二極管驅(qū)動電路與系統(tǒng)溫度控制電路。最后完成了整個激光器的組裝搭建和波長穩(wěn)定輸出。3.提出了一種新的激光穩(wěn)頻溫度和PZT控制方案。利用雙重比例-積分-微分電路(PID)同時控制激光器中的壓電陶瓷和控溫元件,可以同時克服快速的與緩慢的外界擾動,滿足長期鎖定的要求。理論上建立了激光器主動穩(wěn)頻系統(tǒng)的數(shù)學(xué)模型,分析了環(huán)境因素的影響,并在模型中引入了擾動項,得出單調(diào)連續(xù)變化的環(huán)境擾動將帶來穩(wěn)態(tài)誤差。仿真結(jié)果表明雙重控制鎖相環(huán)可以改善這種穩(wěn)態(tài)誤差,并且在調(diào)節(jié)時間、超調(diào)量等方面也具有明顯的優(yōu)勢。最后通過標準具PDH穩(wěn)頻實驗,將激光器鎖在了標準具穩(wěn)定的腔模上,鎖定效果良好。4.實驗上測試和評估了研制的利用棱鏡擴束新型光柵外腔半導(dǎo)體激光器的基本性能,得到了激光器注入電流、控溫溫度、激光功率、輸出波長之間的關(guān)系,并利用自外差實驗,對比了改進型的激光器與原有激光器之間的輸出激光線寬,進一步證實了棱鏡擴束對外腔半導(dǎo)體激光器壓窄線寬的貢獻;同時利用拍頻實驗驗證了自外差線實驗線寬測量數(shù)據(jù)的真實性。最后分析了基于棱鏡擴束的光柵外腔半導(dǎo)體激光器的優(yōu)點和需要改進的地方。
[Abstract]:External cavity semiconductor lasers have outstanding advantages in the longitudinal mode mode, laser linewidth, tuning range, wavelength stability and so on. It has extensive applications in the fields of optical frequency standard, high resolution spectroscopy, atomic physics and other scientific fields. The line width of laser as an important index has been paid attention to. In this paper, the prism is expanded. The new scheme is proposed to narrow the line width of the external cavity semiconductor laser. First, the basic principle of the laser diode is introduced. The effect of the outer cavity of the diode on the line width narrowing is analyzed. The theory of continuous tunability under the action of the grating is introduced. Then the principle of the beam expansion and the dispersion narrowing line width are studied. The design and construction of a grating external cavity semiconductor laser based on prism are designed and built. The design and mechanical drawings are given, and the processing and assembly are completed. A mathematical model of the frequency stabilization of the laser is established. The frequency stabilization model is simulated and the frequency locking scheme is changed by double PID control. The long time of the laser is realized. The general performance of the laser is recorded. The relationship between the injection current, temperature control temperature, laser power, and the output wavelength of the four parameters is obtained. Finally, the output laser linewidth between the improved laser and the original laser is compared by using the beat frequency experiment and the self heterodyne experiment, and the prism beam enlargement is further confirmed. The contribution of the narrow linewidth of the external cavity semiconductor laser, including the following aspects: 1. the principle of the external cavity semiconductor laser is summarized. First, the mechanism of laser diode laser excitation is analyzed. The contribution of the external cavity to the tuning and linewidth narrowing is introduced by analyzing and calculating the diode inner cavity and the extended outer cavity. After introducing the basic equation of the grating, the general tuning process is analyzed, and the continuous adjustable scheme is given in the mechanical design. Secondly, the filtering method in the external cavity semiconductor laser is introduced, mainly through the modeling and analysis of the dispersion filter, the prism beam expander and the optical grid, and the dispersion effect on the line width pressure is deeply discussed. The narrow effect, through the in-depth discussion of the line width expression, the final calculation of the line width formula of the grating external cavity semiconductor laser with prism expansion.2. introduces the realization scheme of the prism external cavity semiconductor laser based on the prism, and the selection and determination of the parameters of each component of the laser, and the detailed analysis of the installation methods of each component. The mechanical structure of the machine is needed, then the mechanical structure of the laser is designed by SolidWorks software, and the mechanical processing and assembly are completed. Secondly, the composition of the laser control circuit is analyzed. The semiconductor diode driver circuit and the system temperature control circuit are emphatically introduced. Finally, the assembly and construction of the whole laser and the stable output.3. of the wavelength are completed. A new laser frequency stabilization temperature and PZT control scheme are proposed. The dual proportional integral differential circuit (PID) is used to control the piezoceramic and temperature control elements in the laser at the same time. It can simultaneously overcome the fast and slow external disturbances and meet the requirement of long-term locking. The influence of environmental factors is analyzed, and the disturbance term is introduced in the model. It is concluded that the environment disturbance with monotone continuous change will bring steady state error. The simulation results show that the dual control phase locked loop can improve the steady-state error and have obvious advantages in the adjustment time and overshoot. Finally, the standard PDH frequency stabilization experiment is carried out. The laser is locked on the stable cavity die of the etalon, and the locking effect is good.4. test and evaluation of the basic performance of a new type of grating external cavity semiconductor laser using prism. The relationship between the injection current, temperature control temperature, laser power and output wavelength is obtained, and the self heterodyne experiment is used to compare the change of the laser beam. The output laser linewidth between the input laser and the original laser further confirms the contribution of the prism to the narrow linewidth of the external cavity semiconductor laser. At the same time, the authenticity of the measured data is verified by the beat frequency experiment. Finally, the advantages of the grating external cavity semiconductor laser based on the prism beam expansion are analyzed. Points and areas that need to be improved.
【學(xué)位授予單位】:國防科學(xué)技術(shù)大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN248.4
本文編號:2145319
[Abstract]:External cavity semiconductor lasers have outstanding advantages in the longitudinal mode mode, laser linewidth, tuning range, wavelength stability and so on. It has extensive applications in the fields of optical frequency standard, high resolution spectroscopy, atomic physics and other scientific fields. The line width of laser as an important index has been paid attention to. In this paper, the prism is expanded. The new scheme is proposed to narrow the line width of the external cavity semiconductor laser. First, the basic principle of the laser diode is introduced. The effect of the outer cavity of the diode on the line width narrowing is analyzed. The theory of continuous tunability under the action of the grating is introduced. Then the principle of the beam expansion and the dispersion narrowing line width are studied. The design and construction of a grating external cavity semiconductor laser based on prism are designed and built. The design and mechanical drawings are given, and the processing and assembly are completed. A mathematical model of the frequency stabilization of the laser is established. The frequency stabilization model is simulated and the frequency locking scheme is changed by double PID control. The long time of the laser is realized. The general performance of the laser is recorded. The relationship between the injection current, temperature control temperature, laser power, and the output wavelength of the four parameters is obtained. Finally, the output laser linewidth between the improved laser and the original laser is compared by using the beat frequency experiment and the self heterodyne experiment, and the prism beam enlargement is further confirmed. The contribution of the narrow linewidth of the external cavity semiconductor laser, including the following aspects: 1. the principle of the external cavity semiconductor laser is summarized. First, the mechanism of laser diode laser excitation is analyzed. The contribution of the external cavity to the tuning and linewidth narrowing is introduced by analyzing and calculating the diode inner cavity and the extended outer cavity. After introducing the basic equation of the grating, the general tuning process is analyzed, and the continuous adjustable scheme is given in the mechanical design. Secondly, the filtering method in the external cavity semiconductor laser is introduced, mainly through the modeling and analysis of the dispersion filter, the prism beam expander and the optical grid, and the dispersion effect on the line width pressure is deeply discussed. The narrow effect, through the in-depth discussion of the line width expression, the final calculation of the line width formula of the grating external cavity semiconductor laser with prism expansion.2. introduces the realization scheme of the prism external cavity semiconductor laser based on the prism, and the selection and determination of the parameters of each component of the laser, and the detailed analysis of the installation methods of each component. The mechanical structure of the machine is needed, then the mechanical structure of the laser is designed by SolidWorks software, and the mechanical processing and assembly are completed. Secondly, the composition of the laser control circuit is analyzed. The semiconductor diode driver circuit and the system temperature control circuit are emphatically introduced. Finally, the assembly and construction of the whole laser and the stable output.3. of the wavelength are completed. A new laser frequency stabilization temperature and PZT control scheme are proposed. The dual proportional integral differential circuit (PID) is used to control the piezoceramic and temperature control elements in the laser at the same time. It can simultaneously overcome the fast and slow external disturbances and meet the requirement of long-term locking. The influence of environmental factors is analyzed, and the disturbance term is introduced in the model. It is concluded that the environment disturbance with monotone continuous change will bring steady state error. The simulation results show that the dual control phase locked loop can improve the steady-state error and have obvious advantages in the adjustment time and overshoot. Finally, the standard PDH frequency stabilization experiment is carried out. The laser is locked on the stable cavity die of the etalon, and the locking effect is good.4. test and evaluation of the basic performance of a new type of grating external cavity semiconductor laser using prism. The relationship between the injection current, temperature control temperature, laser power and output wavelength is obtained, and the self heterodyne experiment is used to compare the change of the laser beam. The output laser linewidth between the input laser and the original laser further confirms the contribution of the prism to the narrow linewidth of the external cavity semiconductor laser. At the same time, the authenticity of the measured data is verified by the beat frequency experiment. Finally, the advantages of the grating external cavity semiconductor laser based on the prism beam expansion are analyzed. Points and areas that need to be improved.
【學(xué)位授予單位】:國防科學(xué)技術(shù)大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN248.4
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