【摘要】：隨著CMOS工藝特征尺寸的不斷縮小,晶體管的老化效應(yīng)嚴(yán)重影響了電路的可靠性,負(fù)偏置溫度不穩(wěn)定性(NBTI)是造成晶體管老化的主要因素之一。提出了一種基于固定故障插入的電路抗老化輸入矢量生成方法,在電路的合適位置插入固定故障,通過自動(dòng)測(cè)試向量生成(ATPG)工具獲取較小的備選抗老化矢量集合,再從中篩選出最優(yōu)矢量。由該方法生成的輸入矢量可以使電路在待機(jī)模式下處于最大老化恢復(fù)狀態(tài),同時(shí)具有較小的時(shí)間開銷。在ISCAS85電路中的仿真結(jié)果表明,與隨機(jī)矢量生成方法相比,在電路待機(jī)模式下加載本文方法生成的輸入矢量,可以達(dá)到最高17%的電路老化時(shí)延改善率。
[Abstract]:With the decreasing of CMOS process characteristic size, the aging effect of transistors seriously affects the reliability of the circuits. The negative bias temperature instability (NBTI) is one of the main factors causing the aging of transistors. In this paper, a method for generating anti-aging input vector of circuit based on fixed fault insertion is proposed. The fixed fault is inserted in the proper position of the circuit, and a small set of alternative anti-aging vectors is obtained by automatic test vector generation (ATPG) tool. The optimal vector is selected from it. The input vector generated by this method can make the circuit in the state of maximum aging recovery in standby mode, and it also has less time cost. The simulation results in the ISCAS85 circuit show that compared with the random vector generation method, the input vector generated by the proposed method can achieve a maximum improvement rate of 17% in the circuit aging delay compared with the random vector generation method in the standby mode of the circuit.
【作者單位】： 合肥工業(yè)大學(xué)電子科學(xué)與應(yīng)用物理學(xué)院;
【基金】：國家自然科學(xué)基金面上項(xiàng)目(61371025,61274036,61404001)
【分類號(hào)】：TN32
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本文編號(hào)：2133915