大功率射頻LDMOS器件設計優(yōu)化與建模
發(fā)布時間：2018-07-13 11:57
【摘要】：LDMOS(Lateral Double Diffused Metal Oxide Semiconductor)器件以其各方面的優(yōu)勢已經(jīng)基本取代雙極型器件成為射頻領域的主流技術,由于RF LDMOS器件巨大的市場前景和重要的軍用價值,成為了半導體行業(yè)研究的熱點,我國也已展開了對硅基RF LDMOS器件的研發(fā)工作。本設計的目標是獲得一款大功率RF LDMOS器件,該器件采用雙層源極場板和背面源結構,利用半導體仿真軟件優(yōu)化設計器件結構和各區(qū)域雜質注入劑量,使器件具有較好的直流特性和頻率特性,然后根據(jù)器件具體結構繪制器件版圖,并在上海華虹宏力半導體制造有限公司完成器件的制造。對小柵寬器件的直流測試結果表明,器件擊穿電壓大于100V,飽和電流密度大于180μA/μm,閾值電壓約為2.2V,對大柵寬封裝器件的測試結果表明,在頻率為1090MHz、漏源電壓為50V的測試條件下,器件最大輸出功率達到500W,效率達到45%,增益達到18dB,達到了設計指標的要求。本論文還嘗試性地對器件進行了小信號建模,提取了器件小信號等效電路中的寄生參數(shù)和本征參數(shù),并在ADS中進行了優(yōu)化,基本完成了器件小信號模型的建立。探討了大信號建模的意義和基本思想,介紹了一種大信號建模方法。
[Abstract]:LDMOS (Lateral diffused Metal oxide Semiconductor) devices have basically replaced bipolar devices as the mainstream technology in RF field with its advantages in various aspects. Because of the huge market prospect and important military value of RF LDMOS devices, LDMOS devices have become a hot research topic in semiconductor industry. Research and development of silicon-based RF LDMOS devices have also been carried out in China. The purpose of this design is to obtain a high power RF LDMOS device. The device uses double-layer source polar field plate and backside source structure, and the semiconductor simulation software is used to optimize the design of device structure and impurity injection dose in each region. The device has better DC and frequency characteristics. Then the layout of the device is drawn according to the specific structure of the device, and the fabrication of the device is completed in Shanghai Huahong Hongli Semiconductor Manufacturing Co., Ltd. The DC test results of small gate width devices show that the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. the test results for the large gate width packaging devices show that under the condition of 1090 MHz frequency and 50 V drain voltage, the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. The maximum output power of the device is 500 W, the efficiency is 45 and the gain is 18 dB. The parasitic and intrinsic parameters of the small signal equivalent circuit are extracted and optimized in ads, and the small signal model of the device is established. The significance and basic idea of large signal modeling are discussed, and a large signal modeling method is introduced.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN386.1
本文編號：2119293
[Abstract]:LDMOS (Lateral diffused Metal oxide Semiconductor) devices have basically replaced bipolar devices as the mainstream technology in RF field with its advantages in various aspects. Because of the huge market prospect and important military value of RF LDMOS devices, LDMOS devices have become a hot research topic in semiconductor industry. Research and development of silicon-based RF LDMOS devices have also been carried out in China. The purpose of this design is to obtain a high power RF LDMOS device. The device uses double-layer source polar field plate and backside source structure, and the semiconductor simulation software is used to optimize the design of device structure and impurity injection dose in each region. The device has better DC and frequency characteristics. Then the layout of the device is drawn according to the specific structure of the device, and the fabrication of the device is completed in Shanghai Huahong Hongli Semiconductor Manufacturing Co., Ltd. The DC test results of small gate width devices show that the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. the test results for the large gate width packaging devices show that under the condition of 1090 MHz frequency and 50 V drain voltage, the breakdown voltage is more than 100 V, the saturation current density is more than 180 渭 A / 渭 m, and the threshold voltage is about 2.2 V. The maximum output power of the device is 500 W, the efficiency is 45 and the gain is 18 dB. The parasitic and intrinsic parameters of the small signal equivalent circuit are extracted and optimized in ads, and the small signal model of the device is established. The significance and basic idea of large signal modeling are discussed, and a large signal modeling method is introduced.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：TN386.1
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