本文選題：MOCVD + 在線監(jiān)測(cè)��； 參考：《應(yīng)用光學(xué)》2017年04期

【摘要】：根據(jù)金屬有機(jī)物化學(xué)氣相沉積(MOCVD)在線紅外測(cè)溫的發(fā)展需要,提出一種3波長(zhǎng)免探測(cè)孔有效面積校準(zhǔn)和反射率修正的測(cè)溫方法。給出了探測(cè)1 300nm、1 150nm、940nm 3波長(zhǎng)的在線測(cè)溫探頭設(shè)計(jì)方案和光路圖,將該探頭應(yīng)用于THOMAS SWAN CCS MOCVD 5.08cm(2英寸)Si(111)襯底上生長(zhǎng)10μm GaN外延層的在線測(cè)溫。測(cè)量結(jié)果表明:在700℃~1 100℃范圍內(nèi),探頭多次測(cè)量的重復(fù)性誤差在1.0℃內(nèi),在950℃~1 100℃范圍內(nèi),以EpiTT紅外測(cè)溫儀為參考,探頭測(cè)溫精度在1℃內(nèi),距離容差性為2mm。該探頭應(yīng)用于我國(guó)自主研發(fā)的MOCVD 5.08cm Si(111)襯底上生長(zhǎng)InGaN/GaN MQW結(jié)構(gòu)藍(lán)光LED外延片,可得最低測(cè)溫量程為435℃,nGaN生長(zhǎng)過(guò)程中測(cè)量噪聲為0.75℃。結(jié)果分析表明:該3波長(zhǎng)免修正在線紅外測(cè)溫法對(duì)于高質(zhì)量單層薄膜外延生長(zhǎng)具有一定可行性,對(duì)于多層復(fù)雜結(jié)構(gòu)外延生長(zhǎng)需要進(jìn)一步改進(jìn)。
[Abstract]:According to the development needs of metal organic chemical vapor deposition (MOCVD) on line infrared temperature measurement, a temperature measurement method with three wavelengths without detection hole effective area calibration and reflectivity correction is proposed. In this paper, the design scheme and optical circuit diagram of the on-line temperature measurement probe for detecting the wavelength of 1 300 nm ~ (-1) 150 nm ~ (-1) nm are presented. The probe is applied to the measurement of the temperature of 10 渭 m gan epitaxial layer grown on the THOMAS Swan CCS MOCVD 5.08cm (2 inch) Si (111) substrate. The results show that in the range of 700 鈩，

本文編號(hào)：2109571