氮化鎵功率晶體管應(yīng)用技術(shù)研究
發(fā)布時間：2018-07-06 09:27
本文選題：氮化鎵 + 反向?qū)?/strong> ； 參考：《南京航空航天大學(xué)》2015年碩士論文
【摘要】：硅(Si)功率器件發(fā)展至今已接近其性能極限,難以滿足開關(guān)電源高頻、高效率、高功率密度的需求。氮化鎵(Ga N)功率晶體管作為寬禁帶半導(dǎo)體材料的典型代表,因其開關(guān)速度快、寄生參數(shù)小、電氣參數(shù)優(yōu)越而受到廣泛關(guān)注。近年來多家半導(dǎo)體廠商已相繼推出Ga N器件,因此,開展氮化鎵功率晶體管的應(yīng)用研究工作顯得十分迫切。本文首先分析了低壓和高壓Ga N功率晶體管的性能優(yōu)勢與不足。低壓增強(qiáng)型Ga N晶體管體積小、寄生參數(shù)小等優(yōu)勢適宜高頻工作;但其反向?qū)▔航蹈摺Ⅱ?qū)動電壓范圍窄。高壓耗盡型Ga N晶體管驅(qū)動技術(shù)簡單,反向恢復(fù)特性優(yōu)異,但其難以實現(xiàn)真正意義的ZVS,這一定程度限制了工作頻率的提高。在特性分析的基礎(chǔ)上,針對低壓Ga N晶體管反向?qū)▔航蹈摺Ⅱ?qū)動電壓范圍窄的不足,本文提出一種適用于低壓Ga N晶體管的改進(jìn)型三電平驅(qū)動方式,該方式通過合理設(shè)置死區(qū)時間并利用假性開通原理,減小了反向?qū)〒p耗、抑制了驅(qū)動電壓的振蕩。一臺12V輸入、1.2V/20A輸出、1MHz開關(guān)頻率的原理樣機(jī)驗證了所提方案的可行性。對高壓Ga N功率晶體管,本文通過對比實驗驗證了封裝寄生參數(shù)對高頻工作性能的影響,得出了表貼式封裝適宜高頻工作的結(jié)論。論文指出了高壓Ga N功率晶體管結(jié)電容小有利于減小LLC諧振變換器死區(qū)時間,從而優(yōu)化關(guān)斷損耗和導(dǎo)通損耗,提高變換器效率。實驗室制作完成了400V輸入、12V/25A輸出、1MHz開關(guān)頻率的原理樣機(jī)并與Si MOSFET進(jìn)行了對比實驗,結(jié)果表明Ga N器件的高頻開關(guān)性能和效率優(yōu)勢明顯。
[Abstract]:Silicon (Si) power devices have been developed close to their performance limits, and it is difficult to meet the needs of high frequency, high efficiency and high power density of switching power supply. Gallium nitride (gan) power transistors, as typical representatives of wide band gap semiconductor materials, have attracted wide attention due to their high switching speed, small parasitic parameters and superior electrical parameters. In recent years, many semiconductor manufacturers have introduced gan devices one after another, so it is very urgent to research the application of Gallium nitride power transistors. Firstly, the performance advantages and disadvantages of low voltage and high voltage gan power transistors are analyzed. The low voltage enhanced gan transistor has the advantages of small volume and small parasitic parameters, but its reverse on-voltage drop is high and its driving voltage range is narrow. The drive technology of high voltage depleted gan transistor is simple and the reverse recovery characteristic is excellent, but it is difficult to realize the true meaning of ZVS, which limits the increase of working frequency to a certain extent. On the basis of characteristic analysis, an improved three-level drive mode for low-voltage gan transistors is proposed in this paper, aiming at the shortcomings of high reverse on-voltage drop and narrow driving voltage range of low-voltage gan transistors. By setting the dead time reasonably and using the false turn-on principle, the reverse conduction loss is reduced and the oscillation of the driving voltage is restrained. A 12V input 1.2V / 20A output 1MHz switching frequency prototype verifies the feasibility of the proposed scheme. For high voltage gan power transistors, the effect of parasitic parameters on the performance of high frequency is verified by comparison experiments, and the conclusion is drawn that the package is suitable for high frequency operation. In this paper, it is pointed out that the small capacitor of high voltage gan power transistor junction is beneficial to reduce the dead time of LLC resonant converter, thus optimize the turn-off loss and on-loss, and improve the efficiency of the converter. A 400V input 12V / 25A output 1MHz switching frequency prototype has been fabricated and compared with that of Si MOSFET. The results show that the high frequency switching performance and efficiency advantages of gan devices are obvious.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN323.4
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