本文選題：有機(jī)薄膜晶體管 + 雜化絕緣層�。� 參考：《燕山大學(xué)》2015年碩士論文

【摘要】：有機(jī)薄膜晶體管因具有制備工藝簡(jiǎn)單、成本低廉、柔韌性好等優(yōu)點(diǎn),被廣泛應(yīng)用于顯示、傳感器、集成電路等領(lǐng)域。其中,絕緣層的表面特性可以影響在它上面生長(zhǎng)的半導(dǎo)體層的結(jié)晶質(zhì)量,所以對(duì)整個(gè)器件的性能有至關(guān)重要的影響。本文制備出了一種有機(jī)"無(wú)機(jī)雜化絕緣薄膜,旨在結(jié)合無(wú)機(jī)材料的高介電常數(shù)與有機(jī)材料的低表面粗糙度,優(yōu)化器件性能。具體研究?jī)?nèi)容如下:首先,介紹有機(jī)薄膜晶體管的應(yīng)用領(lǐng)域、研究現(xiàn)狀以及目前存在的問(wèn)題,并詳細(xì)闡述其工作原理和基本結(jié)構(gòu),在此基礎(chǔ)上介紹有機(jī)薄膜晶體管的一些性能指標(biāo)和材料的選取。分析有機(jī)薄膜晶體管所用到的制備工藝,并闡述本文中器件的制備過(guò)程,對(duì)器件的測(cè)量?jī)x器及其原理進(jìn)行說(shuō)明。其次,對(duì)酞菁銅有機(jī)薄膜晶體管的有機(jī)絕緣層作用進(jìn)行深入研究。應(yīng)用PMMA修飾Si O2和PVA,制備的雙絕緣層器件的輸出電流和遷移率比單層器件得到提高。之后研究新型聚合物材料P(MMA-GMA)作為絕緣層的效果,對(duì)絕緣薄膜的厚度進(jìn)行有效減薄后,得到的器件性能明顯提升。再次,對(duì)比制備基于PVA/P(MMA-GMA)雙絕緣層與P(MMA-GMA)單絕緣層器件,雙層器件閾值電壓由-5V改善到-3V,遷移率由5.24×10-3cm2/Vs提高到1.15×10-2cm2/Vs,并對(duì)器件性能改善原因進(jìn)行分析。最后,研究基于Al2O3/P(MMA-GMA)雜化絕緣層制備的酞菁銅有機(jī)薄膜晶體管。確定磁控濺射法制備Al2O3薄膜的工藝參數(shù),用原子力顯微鏡及X射線衍射儀分析薄膜的生長(zhǎng)情況。
[Abstract]:Organic thin film transistors are widely used in display, sensor, integrated circuit and other fields because of their advantages of simple preparation, low cost, good flexibility and so on. The surface characteristics of the insulating layer can affect the crystallization quality of the semiconductor layer grown on it, so it has a crucial effect on the performance of the whole device. In this paper, an organic "inorganic hybrid insulating film" was prepared to optimize the device performance by combining the high dielectric constant of the inorganic material with the low surface roughness of the organic material. The specific research contents are as follows: firstly, the application field of organic thin film transistors, the present research situation and the existing problems are introduced, and the working principle and basic structure of the organic thin film transistors are described in detail. On this basis, some performance indexes and material selection of organic thin film transistors are introduced. The fabrication process of organic thin film transistors is analyzed, and the fabrication process of the devices in this paper is described. The measuring instruments and their principles are explained. Secondly, the function of organic insulating layer of copper phthalocyanine organic thin film transistor is studied. PMMA modified Sio _ 2 and PVA are used to improve the output current and mobility of the double-layer devices compared with single-layer devices. The effect of new polymer material P (MMA-GMA) as the insulating layer is studied. After the thickness of the insulating film is reduced effectively, the performance of the device is improved obviously. Thirdly, based on PVA / P (MMA-GMA) double insulation layer and P (MMA-GMA) single insulating layer device, the threshold voltage of double layer device is improved from -5V to -3V, and the mobility is increased from 5.24 脳 10 ~ (-3) cm ~ (-2) / Vs to 1.15 脳 10 ~ (-2) cm ~ (-2) / V _ s. Finally, the copper phthalocyanine organic thin film transistors based on Al _ 2O _ 3 / P (MMA-GMA) hybrid insulator are studied. The technological parameters of preparing Al _ 2O _ 3 thin films by magnetron sputtering were determined. The growth of Al _ 2O _ 3 thin films was analyzed by atomic force microscope and X-ray diffractometer.
【學(xué)位授予單位】：燕山大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN321.5

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本文編號(hào)：2101554