本文選題：懸空波導(dǎo) + 多量子阱��； 參考：《南京郵電大學(xué)》2017年碩士論文

【摘要】：光電探測(cè)器作為現(xiàn)代光通信系統(tǒng)中的關(guān)鍵器件,在推動(dòng)社會(huì)信息化快速發(fā)展上發(fā)揮著至關(guān)重要的作用。尤其是光電探測(cè)器與不同結(jié)構(gòu)波導(dǎo)的集成,進(jìn)一步促進(jìn)了探測(cè)器在不同領(lǐng)域的應(yīng)用。具有高響應(yīng)速率、高可靠性、制作工藝簡(jiǎn)單等優(yōu)點(diǎn)的波導(dǎo)探測(cè)器,將是未來(lái)光通信器件的發(fā)展方向。本文對(duì)懸空波導(dǎo)結(jié)構(gòu)以及探測(cè)器制備工藝進(jìn)行了研究,成功實(shí)現(xiàn)了GaN多量子阱懸空波導(dǎo)探測(cè)器在Si襯底GaN基晶元上的單片集成。主要工作和成果如下:提出了一種GaN懸空結(jié)構(gòu)波導(dǎo),并使用FDTD數(shù)值分析法對(duì)波導(dǎo)的光耦合屬性進(jìn)行了仿真分析。GaN材料與空氣的高折射率差,使懸空結(jié)構(gòu)波導(dǎo)具有強(qiáng)光場(chǎng)限制功能。研究紫外光刻、深硅刻蝕和背后減薄刻蝕、電子束蒸鍍等主要工藝,實(shí)現(xiàn)了p-n結(jié)GaN多量子阱懸空波導(dǎo)探測(cè)器的集成制備。采用深硅刻蝕和背后減薄刻蝕雙面工藝實(shí)現(xiàn)了懸空結(jié)構(gòu)波導(dǎo)。之后,使用光學(xué)顯微鏡、掃描電鏡(SEM)和原子力顯微鏡(AFM)等設(shè)備對(duì)器件的結(jié)構(gòu)、電極區(qū)域和薄膜表面粗糙度進(jìn)行了測(cè)試和分析。搭建了GaN多量子阱懸空波導(dǎo)探測(cè)器主要特性參數(shù)測(cè)量系統(tǒng)。對(duì)器件主要特性參數(shù)進(jìn)行了測(cè)量并對(duì)結(jié)果進(jìn)行了分析。器件具有發(fā)光和探測(cè)雙重模式。器件能達(dá)到的最高光譜響應(yīng)度分別是在0 V偏壓和435 nm入射光波長(zhǎng)下大約為7.58 mAW-1,在3 V偏壓和401 nm入射光波長(zhǎng)下大約為140 mAW-1。此外,器件的金屬電極可用作反光鏡將部分入射光返回再吸收,進(jìn)一步提高器件光電流響應(yīng)。
[Abstract]:As a key device in modern optical communication system, photodetector plays an important role in promoting the rapid development of social informatization. Especially, the integration of photodetectors with different waveguides promotes the application of detectors in different fields. Waveguide detectors with high response rate, high reliability and simple fabrication process will be the development direction of optical communication devices in the future. In this paper, the structure of suspended waveguide and the fabrication process of the detector are studied, and the monolithic integration of gan multi-quantum well suspended waveguide detector on gan crystal on Si substrate is successfully realized. The main work and results are as follows: a kind of gan suspended waveguide is proposed, and the optical coupling properties of the waveguide are simulated by FDTD method. The difference of high refractive index between gan material and air is analyzed. The suspended waveguide has the function of limiting the strong light field. The integrated fabrication of p-n junction gan multi-quantum well suspended waveguide detectors has been achieved by studying the main processes such as UV lithography deep silicon etching and back thinning and electron beam evaporation. The suspended waveguide is realized by deep silicon etching and back thinning etching. The structure, electrode area and surface roughness of the film were measured and analyzed by means of optical microscope, scanning electron microscope (SEM) and atomic force microscope (AFM). The measurement system of main characteristic parameters of gan multi-quantum well suspended waveguide detector is built. The main characteristic parameters of the device are measured and the results are analyzed. The device has the dual mode of luminescence and detection. The maximum spectral responsivity of the device is about 7.58 mAW-1 at 0 V bias and 435 nm incident wavelength, and 140 mAW-1 at 3 V bias and 401 nm incident wavelength, respectively. In addition, the metal electrode of the device can be used as a reflector to return part of the incident light back to reabsorption and further improve the photocurrent response of the device.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN36

【參考文獻(xiàn)】

相關(guān)期刊論文 前4條

1 尹冬冬;何婷婷;韓勤;呂倩倩;張冶金;楊曉紅;;High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits[J];Journal of Semiconductors;2016年11期

2 崔榮;楊曉紅;呂倩倩;尹冬冬;尹偉紅;李彬;韓勤;;SOI波導(dǎo)與InGaAs/InP光電探測(cè)器的集成[J];激光與光電子學(xué)進(jìn)展;2014年11期

3 姜軍,周芳,曾俊英,楊鐵鋒;光刻技術(shù)的現(xiàn)狀和發(fā)展[J];紅外技術(shù);2002年06期

4 雷肇棣;光電探測(cè)器原理及應(yīng)用[J];物理;1994年04期

，

本文編號(hào)：2086590