本文選題：PIN二極管 + 數(shù)值分析��； 參考：《南京理工大學(xué)》2015年碩士論文

【摘要】：在未來(lái)的高科技戰(zhàn)爭(zhēng)中,信息的控制權(quán)將變得越來(lái)越重要,因此通信系統(tǒng)將會(huì)成為高功率微波武器攻擊的重點(diǎn)。PIN二極管作為通信系統(tǒng)接收機(jī)前端限幅電路中的重要元件,比較容易受到高功率電磁脈沖的攻擊,因此分析PIN二極管瞬態(tài)物理特性,對(duì)了解PIN二極管的毀傷機(jī)理、加強(qiáng)雷達(dá)接收機(jī)的電磁防護(hù)具有重要的意義。本論文采用數(shù)值模型對(duì)PIN二極管進(jìn)行了模擬,數(shù)值模型相比于解析模型更適合深入分析半導(dǎo)體器件內(nèi)部物理量的分布。文章首先基于半導(dǎo)體漂移-擴(kuò)散方程組和熱傳導(dǎo)方程,利用時(shí)域譜元法(SETD)推導(dǎo)出PIN二極管瞬態(tài)電熱特性求解方程,通過(guò)算例驗(yàn)證了了PIN二極管正向?qū)�、反向截止的特�?計(jì)算了PIN二極管內(nèi)部溫度分布,并且分析了正弦波作用下PIN二極管內(nèi)部載流子的運(yùn)動(dòng)情況。接著論文介紹了半導(dǎo)體器件二次擊穿的物理機(jī)理,闡述了計(jì)算大電壓作用下PIN二極管電熱特性的電熱耦合分析方法。利用電熱耦合方法分析了電磁脈沖對(duì)PIN二極管的電流模式破壞,通過(guò)分析,確立了在電流模式破壞的過(guò)程中‘,PIN二極管經(jīng)歷的不同階段,并且發(fā)現(xiàn)在反向大電壓的作用下,PIN二極管P區(qū)和N區(qū)處比較容易受到熱損傷。最后,論文中將PIN管數(shù)值分析方法與基爾霍夫電流定律、電壓定律理論相結(jié)合,運(yùn)用牛頓迭代方法計(jì)算了不同幅度高功率正弦波作用下PIN管限幅電路的輸出電壓,分析了電路中PIN二極管內(nèi)部載流子的運(yùn)動(dòng)情況,研究了PIN限幅電路輸出電壓尖峰泄漏持續(xù)時(shí)間,發(fā)現(xiàn)雙管限幅器相較于單管限幅器,輸出電壓尖峰泄漏功率更小。并且高功率微波對(duì)限幅器電路中PIN二極管的損傷也得到了分析。
[Abstract]:In the future high-tech war, the control of information will become more and more important, so the communication system will become the focus of high-power microwave weapon attack. PIN diode will be an important component in the front-end limiting circuit of the communication system receiver. It is easy to be attacked by high power electromagnetic pulse, so it is of great significance to analyze the transient physical characteristics of PIN diode and to understand the damage mechanism of PIN diode and strengthen the electromagnetic protection of radar receiver. In this paper, the PIN diode is simulated with a numerical model. Compared with the analytical model, the numerical model is more suitable for the in-depth analysis of the distribution of physical quantities in semiconductor devices. Based on the drift diffusion equations and heat conduction equations, the transient electrothermal properties of PIN diodes are derived by using the time domain spectral element method (SETD). The forward and reverse cutoff characteristics of the PIN diodes are verified by an example. The internal temperature distribution of PIN diodes is calculated, and the motion of carriers in PIN diodes under the action of sine wave is analyzed. Then, the physical mechanism of secondary breakdown of semiconductor devices is introduced, and the electrothermal coupling analysis method for calculating the electrothermal characteristics of PIN diodes under the action of large voltage is described. The electrothermal coupling method is used to analyze the current-mode damage of PIN diode caused by electromagnetic pulse. Through the analysis, the different stages of PIN diode in the process of current mode failure are established. It is found that the P and N regions of PIN diodes are vulnerable to thermal damage under the action of high reverse voltage. Finally, the PIN tube numerical analysis method is combined with Kirchhoff's current law and voltage law theory, and the output voltage of PIN tube limiting circuit under different amplitude and high power sinusoidal wave is calculated by Newton iteration method. The movement of carriers in PIN diode is analyzed. The leakage duration of output voltage spike in PIN limiter is studied. It is found that the leakage power of output voltage spike is smaller than that of single transistor limiter. The damage of PIN diode in limiter circuit by high power microwave is also analyzed.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.4

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