本文選題：銦鎵鋅氧化物 + 薄膜晶體管��； 參考：《北京理工大學(xué)》2015年碩士論文

【摘要】：柔性顯示器件是未來顯示技術(shù)領(lǐng)域的一個(gè)熱門研究方向,而與此同時(shí)非晶銦鎵鋅氧化物薄膜晶體管(α-IGZO TFT)則因其相比傳統(tǒng)的非晶硅薄膜晶體管具有遷移率高、均勻性好、可以大面積低溫制備等優(yōu)點(diǎn)被視為后者的潛在代替者,對(duì)于柔性襯底上的非晶銦鎵鋅氧化物薄膜晶體管的研究長(zhǎng)期以來受到了各國(guó)研究者們的關(guān)注。我們利用射頻磁控濺射、等離子體增強(qiáng)化學(xué)氣相沉積法(PECVD)、熱蒸發(fā)沉積等鍍膜技術(shù),完成了在柔性襯底聚酰亞胺(polyimide,PI)薄膜表面制備α-IGZO TFT器件的工作,針對(duì)存在的相關(guān)問題進(jìn)行了工藝上的改良,并且探索了改善方案的工藝參數(shù)與TFT器件電學(xué)性能及穩(wěn)定性之間的關(guān)系。采用疊層SiNx/SiO2薄膜作為絕緣層薄膜的方法制備了柔性襯底上α-IGZO TFT器件。由于SiNx材料具備更高的介電常數(shù)而SiO2材料與IGZO薄膜有著更好的界面接觸,通過兩者厚度的合理搭配找到最優(yōu)的工藝參數(shù)(SiNx/SiO2 200nm/50nm),我們得到了比采用同等厚度的單層SiNx或者SiO2絕緣層器件更好的柔性α-IGZO TFT器件性能,并且取得更好的彎曲及偏壓穩(wěn)定性。針對(duì)柔性襯底容易在薄膜本征應(yīng)力的影響下發(fā)生形變而在制備過程中造成不良影響的問題,通過對(duì)PECVD制備SiNx和SiO2薄膜的工藝進(jìn)行摸索,找到高低頻配比時(shí)間與薄膜應(yīng)力關(guān)系,在疊層SiNx/SiO2水氧隔絕層的制備過程中通過工藝組合找到應(yīng)力平衡的最優(yōu)參數(shù)實(shí)現(xiàn)最終器件的整體應(yīng)力平衡,并同時(shí)取得最佳的器件性能和穩(wěn)定性。對(duì)柔性襯底上α-IGZO TFT器件的退火進(jìn)行了研究,發(fā)現(xiàn)將進(jìn)行過一次大氣退火的器件在冷卻后進(jìn)行二次大氣退火可以取得很大的改善效果,有更高的飽和遷移率(3.9 cm2/V·s)、更小的亞閾值擺幅(1.27 V/decade)和更好的穩(wěn)定性,針對(duì)這種改善我們通過退火工藝比對(duì)找到了最優(yōu)工藝參數(shù),并且通過數(shù)據(jù)分析和相關(guān)測(cè)試結(jié)果確認(rèn)了這種改善來自于二次退火對(duì)IGZO薄膜造成的影響。
[Abstract]:Flexible display devices are a hot research field in the field of display technology in the future, while amorphous indium gallium zinc oxide thin film transistors (偽 -IGZO TFT) have higher mobility and better uniformity than traditional amorphous silicon thin film transistors. The advantages such as large area low temperature fabrication are regarded as potential substitutes for the latter. The research of amorphous indium gallium zinc oxide thin film transistors on flexible substrates has been paid much attention by researchers all over the world for a long time. Using RF magnetron sputtering, plasma enhanced chemical vapor deposition (PECVD) and thermal evaporation deposition techniques, 偽 -IGZO TFT devices have been fabricated on the surface of polyimide (Pi) thin films on flexible substrates. In order to solve the related problems, the relationship between the process parameters of the improved scheme and the electrical properties and stability of TFT devices is explored. 偽 -IGZO TFT devices on flexible substrates were fabricated by using laminated SiNx / SiO2 thin films as insulating films. Because of the higher dielectric constant of the SiNx material and the better interface contact between the Sio _ 2 material and the IGZO film, By finding the optimal process parameters (Sinx / SiO2 200nm/50nm), we obtain better flexible 偽 -IGZO TFT devices with better bending and bias stability than single-layer SiNx or SiO2 insulator devices with the same thickness. In order to solve the problem that flexible substrates are easily deformed under the influence of intrinsic stress of thin films and have adverse effects in the preparation process, the relationship between the time of high and low frequency ratio and the stress of thin films is found by exploring the process of PECVD preparation of SiNx and Sio _ 2 films. The optimum parameters of stress balance are found through the process combination during the preparation of the layered SiNx / Sio _ 2 water-oxygen insulator layer. The overall stress balance of the final device is realized, and the optimal device performance and stability are obtained at the same time. The annealing of 偽 -IGZO TFT devices on flexible substrates is studied. We have higher saturation mobility (3.9cm ~ 2 / V s),) and better stability with a smaller subthreshold swing (1.27V / decade). For this improvement, we find the optimal process parameters through annealing process comparison. The effect of secondary annealing on IGZO thin films is confirmed by data analysis and related test results.
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN321.5

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 馮魏良;黃培;;柔性顯示襯底的研究及進(jìn)展[J];液晶與顯示;2012年05期

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本文編號(hào)：2073546