本文選題：薄膜體聲波諧振器(FBAR) + 頻率調(diào)諧��； 參考：《浙江大學》2015年碩士論文

【摘要】：隨著微電子產(chǎn)業(yè)的不斷發(fā)展,特別是可穿戴設備的興起,市場對電子元器件的要求越來越嚴苛。薄膜體聲波諧振器(FBAR)作為一種高頻器件,擁有很小的體積以及極高的品質(zhì)因數(shù),已逐漸被應用于無線收發(fā)電路。同時,基于FBAR器件的各類傳感器通常具有很高的靈敏度,受到了國內(nèi)外研究人員的關注�？梢灶A見,在未來微電子產(chǎn)品中,FBAR必將發(fā)揮更大的作用。 本文基于實驗室超凈間微納加工平臺,研究制備了高性能的FBAR器件。同時,從市場應用需求出發(fā),提出了一種新型的電調(diào)FBAR結構,并基于該結構,提出了多種新型的實際應用方案。具體的研究內(nèi)容和成果如下： 1、獲得了成熟穩(wěn)定的背刻蝕FBAR制備工藝。依托實驗室MEMS工藝環(huán)境,成功制備出了諧振頻率在1-3GHz的背刻蝕型FBAR器件。經(jīng)測試制得的器件Q值普遍在500以上,最好的器件Q值高達2068。 2、研究了FBAR的本征電調(diào)特性及其機理。對于工作頻率約為1.5GHz的FBAR,測試得到直流偏壓會引起15kHz/V或30kHz/V的頻率偏移,據(jù)此推出了直流偏壓對ZnO彈性系數(shù)的影響為+0.03%@+10V,并從壓電系數(shù)角度分析了出現(xiàn)上述兩種結果的原因,驗證了FBAR的本征電調(diào)機理。 3、提出了新型的電調(diào)FBAR器件。通過在FBAR壓電層和電極之間引入了一層半導體ZnO薄層,創(chuàng)造性的將肖特基勢壘二極管和FBAR壓電振蕩堆結合在一起,極大的提升了FBAR的電調(diào)能力。通過制備與測試,得到了調(diào)諧范圍達200kHz/V的電調(diào)FBAR器件,遠大于FBAR的本征電調(diào)結果。同時,提出了新型電調(diào)FBAR的等效模型,該模型與測試結果吻合的很好,為進一步研究提供了理論工具。 4、提出了新型電調(diào)FBAR的多種應用。包括(1)基于它的紫外光(UV)傳感器,在1mW/cm2光強下,頻率響應為140kHz,而傳統(tǒng)FBAR在同樣光強下,僅有40kHz的頻率響應,靈敏度有了很大的提升。(2)基于其電調(diào)能力提出了一種可以單芯片集成的溫度補償和頻率自校準方案,實現(xiàn)了FBAR的性能優(yōu)化。(3)本文還提出了一種可以實現(xiàn)全頻段調(diào)諧的電調(diào)FBAR濾波器陣列結構。這些應用都具有很大的市場前景。
[Abstract]:With the development of microelectronics industry, especially the rise of wearable devices, the market demands more and more stringent electronic components. Thin film bulk acoustic resonator (FBAR), as a kind of high frequency device, has been used in wireless transceiver because of its small volume and high quality factor. At the same time, all kinds of sensors based on FBAR devices usually have high sensitivity, which has attracted the attention of researchers at home and abroad. It can be predicted that FBAR will play a greater role in the future microelectronics products. In this paper, high performance FBAR devices are fabricated on the platform of laboratory super-clean micro-nano fabrication. At the same time, according to the market application requirements, a new type of electric tuning FBAR structure is proposed, and based on this structure, several new practical application schemes are proposed. The specific research contents and results are as follows: 1. A mature and stable preparation process of back etching FBAR has been obtained. Based on the laboratory MEMS process environment, a backetching FBAR device with resonant frequency of 1-3 GHz was successfully fabricated. The Q-value of FBAR is generally above 500, and the best is 2068.2. The intrinsic electromodulation characteristics and its mechanism of FBAR are studied. For FBARs whose operating frequency is about 1.5GHz, the frequency offset of 15kHz / V or 30kHz / V is obtained by measuring DC bias voltage. According to this, the effect of DC bias voltage on the elastic coefficient of ZnO is 0.03 @ 10V, and the reasons for the above two results are analyzed from the angle of piezoelectric coefficient. The intrinsic electromodulation mechanism of FBAR is verified. 3. A new type of FBAR device is proposed. By introducing a thin layer of semiconductor ZnO between the piezoelectric layer of FBAR and the electrode, the Schottky barrier diode and the FBAR piezoelectric oscillator stack are creatively combined, which greatly improves the electric tuning ability of FBAR. The tunable FBAR device with a tuning range of 200 kHz / V is obtained, which is much larger than the intrinsic tuning result of FBAR. At the same time, the equivalent model of the new electric regulation FBAR is put forward, which is in good agreement with the test results, which provides a theoretical tool for further research. 4. Several applications of the new electric regulation FBAR are proposed. Including (1) the UV sensor based on it, with a frequency response of 140 kHz at 1 MW / cm2 light intensity, whereas the conventional FBAR has a frequency response of only 40 kHz at the same light intensity. The sensitivity has been greatly improved. (2) based on its electromodulation capability, a single-chip temperature compensation and frequency self-calibration scheme is proposed. The performance of FBAR is optimized. (3) this paper also proposes an array structure of electrically tuned FBAR filter which can be tuned in full frequency band. These applications have great market prospects.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN629.1

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本文編號：2072831