本文選題：晶片鍵合 + 智能剝離��； 參考：《南京大學(xué)學(xué)報(bào)(自然科學(xué))》2017年03期

【摘要】：絕緣體上鍺(Germanium-on-Insulator,GOI)結(jié)合了Ge材料及SOI(Silicon-on-Insulator)結(jié)構(gòu)的優(yōu)點(diǎn),是一種極具吸引力的Si基新型材料.GOI材料不僅具有高的電子和空穴遷移率,同時(shí)其獨(dú)特的全介質(zhì)隔離結(jié)構(gòu)可以避免短溝道效應(yīng),降低寄生電容和結(jié)漏電流.首先研究不同表面處理方法對(duì)體Ge與SiO2/Si晶片鍵合強(qiáng)度的影響,實(shí)驗(yàn)結(jié)果顯示采用N2等離子體活化處理結(jié)合氨水溶液(NH4OH∶H2O=1∶10)親水性處理,所得到的體Ge與SiO2/Si晶片的鍵合效果較好,其鍵合強(qiáng)度3.8 MPa.利用智能剝離技術(shù)(Smart-Cut TM)制備了絕緣體上鍺材料.SEM測(cè)試顯示GOI材料鍵合質(zhì)量良好,界面清晰平整,并且Ge層大部分面積無(wú)空洞.實(shí)驗(yàn)分析得到GOI材料的壓應(yīng)力及XRD(004)搖擺曲線中Ge峰的不對(duì)稱是由GOI表面的注氫損傷層引起的.真空500℃退火30min對(duì)于注入損傷層的應(yīng)力具有釋放作用,但無(wú)法修復(fù)注入損傷.用溶液(NH4OH∶H2O2∶H2O=1∶1∶10)腐蝕去除注入損傷層后,應(yīng)力層被去除,并且獲得Ge峰半高寬僅為70.4arc sec的GOI材料.
[Abstract]:Germanium-on-Insulator (GOI), which combines the advantages of GE and SOI (Silicon-on-Insulator), is an attractive Si-based material. GOI not only has high electron and hole mobility, but also can avoid short channel effect. Reduce parasitic capacitance and leakage current. The effect of different surface treatment methods on bonding strength between GE and Sio _ 2 / Si wafer was studied. The experimental results showed that N _ 2 plasma activation combined with NH _ 4o _ H _ 2O: 1: 10 (NH _ 4o _ H _ 2O: 1: 10) was used. The bonding effect of the bulk GE and Sio _ 2 / Si wafer is good, and the bonding strength is 3.8 MPA. The germanium material on insulator prepared by smart stripping technique (Smart-Cut TM). SEM test shows that the bonding quality of GOI material is good, the interface is clear and smooth, and there is no cavity in most GE layer area. The experimental results show that the pressure stress of GOI and the asymmetry of GE peak in XRD (004) rocking curve are caused by the damage layer on GOI surface by hydrogen injection. Vacuum annealed at 500 鈩，

本文編號(hào)：2063954