本文選題：IGZO + 射頻磁控濺射　； 參考：《山東大學(xué)》2015年碩士論文

【摘要】：相比于PN結(jié)二極管,由多數(shù)載流子導(dǎo)通的肖特基二極管具有響應(yīng)速率快,正向?qū)▔航档偷葍?yōu)點(diǎn),在直流、微波領(lǐng)域得到廣泛應(yīng)用。近年來(lái),以非晶In-Ga-Zn-O (a-IGZO)為代表的非晶氧化物半導(dǎo)體由于其高電子遷移率(10cm2/Vs)、可大面積均勻成膜、制備溫度低、可見(jiàn)光透明、柔性等優(yōu)點(diǎn)引起了人們廣泛重視。本文將針對(duì)IGZO基肖特基二極管的性能進(jìn)行了系統(tǒng)化的研究。論文由以下三個(gè)部分組成：(1)簡(jiǎn)單明了地解釋了肖特基二極管的工作原理,列出了二極管中存在的電荷傳輸過(guò)程,闡述了結(jié)電容和結(jié)擊穿兩個(gè)方面。列出了處理實(shí)驗(yàn)數(shù)據(jù)的基本公式,通過(guò)公式推導(dǎo)實(shí)驗(yàn)中各個(gè)參數(shù)。(2)介紹了整個(gè)實(shí)驗(yàn)工藝及設(shè)備,并指出了應(yīng)用這些設(shè)備過(guò)程中應(yīng)注意的事項(xiàng)。(3)詳細(xì)地介紹了本論文的實(shí)驗(yàn)成果：盡管近年來(lái)IGZO基薄膜晶體管得到了廣泛的研究,而相對(duì)于此種材料的肖特基二極管的研究卻非常少,盡管二極管是大部分集成電路和微波前段整流器方面關(guān)鍵組成部分。這里我們用射頻磁控濺射法在室溫下制備了IGZO基肖特基二極管,對(duì)二極管不同陽(yáng)極金屬、不同濺射功率、不同氧濃度、不同IGZO薄膜厚度等方面進(jìn)行了系統(tǒng)的研究,同時(shí)研究了這些條件下二極管的擊穿電壓特性。實(shí)驗(yàn)發(fā)現(xiàn),高功函數(shù)金屬Pd與其他金屬相比由于其表面易被氧化更易形成具有良好性能的肖特基二極管。在濺射過(guò)程中,極高的射頻功率和氧濃度都會(huì)導(dǎo)致Pd-IGZO接觸界面質(zhì)量下降,從而降低了二極管性能。在低功率(≤70W)和低的氧濃度(2.5%-5%)情況下制備的高性能肖特基二極管得到了高的整流率1.25×105,低的理想因子1.14,以及高的勢(shì)壘高度0.73 eV。不同IGZO薄膜厚度情況下,200nm-IGZO肖特基二極管具有高的擊穿電壓-15 V。整個(gè)實(shí)驗(yàn)過(guò)程都是在室溫下完成,說(shuō)明完全可能在柔性襯底上制備高性能的肖特基二極管。
[Abstract]:Compared with PN junction diodes, Schottky diodes with majority carrier conduction have the advantages of fast response rate and low forward on-voltage drop, so they are widely used in the field of direct current and microwave. In recent years, amorphous oxide semiconductors, represented by amorphous In-Ga-Zn-O (a-IGZO), have attracted much attention because of their high electron mobility (10cm ~ 2 / Vs), large area homogeneous film formation, low temperature, transparent visible light, flexibility and so on. The performance of IGZO Schottky diode is systematically studied in this paper. The thesis consists of the following three parts: (1) the working principle of Schottky diode is explained simply and clearly, the charge transfer process in the diode is listed, and the two aspects of closing capacitance and junction breakdown are expounded. The basic formulas for dealing with experimental data are listed, and the parameters in the experiment are deduced by formula. (2) the whole experiment process and equipment are introduced. It also points out the matters needing attention in the application of these devices. (3) the experimental results of this paper are introduced in detail: although IGZO based thin film transistors have been extensively studied in recent years, There is little research on Schottky diodes relative to this material, although diodes are a key component of most integrated circuits and microwave front rectifiers. In this paper, IGZO Schottky diodes are fabricated by RF magnetron sputtering at room temperature. Different anode metals, different sputtering power, different oxygen concentration and different thickness of IGZO thin films are systematically studied. At the same time, the breakdown voltage characteristics of the diodes under these conditions are studied. It is found that compared with other metals, PD with high power function is more easily oxidized to form Schottky diodes with good performance. During the sputtering process, the high RF power and oxygen concentration will lead to the degradation of Pd-IGZO contact interface quality, thus reducing the performance of the diode. The high performance Schottky diodes with low power (鈮，

本文編號(hào)：2056762