本文選題：壓接型絕緣柵雙極型晶體管(IGBT) + 單芯片子模組　； 參考：《半導(dǎo)體技術(shù)》2017年10期

【摘要】：壓接型絕緣柵雙極型晶體管(IGBT)器件因具有雙面散熱、短路失效和易于串聯(lián)等優(yōu)點(diǎn),正逐步應(yīng)用到柔性直流輸電等領(lǐng)域。但其在工作過程中的熱學(xué)、力學(xué)特性與傳統(tǒng)焊接式IGBT模塊相比有很大差異,故存在不同的長(zhǎng)期可靠性問題�；谟邢拊ń⒘藟航有虸GBT器件單芯片子模組多物理場(chǎng)耦合仿真模型,研究了三種功率循環(huán)仿真條件下器件的熱學(xué)和力學(xué)特性,并且在功率循環(huán)過程中利用金屬彈塑性模型來模擬材料的瞬態(tài)特性。仿真結(jié)果表明,IGBT芯片發(fā)射極表面與發(fā)射極鉬片相接觸的邊緣是應(yīng)力集中區(qū)域,芯片發(fā)射極表面柵極缺口和四周邊角處有明顯的塑性變形。同時(shí),將仿真結(jié)果與實(shí)際失效的IGBT芯片進(jìn)行了對(duì)比,進(jìn)一步驗(yàn)證了仿真模型的有效性和適用性。
[Abstract]:Voltage-connected insulated gate bipolar transistor (IGBT) devices are gradually applied to flexible direct current transmission due to their advantages of double-sided heat dissipation, short-circuit failure and ease of series. However, the thermal and mechanical properties of IGBT in the working process are different from those of the traditional IGBT module, so there are different long-term reliability problems. Based on the finite element method (FEM), the simulation model of multi-physical field coupling for single-chip submodules of IGBT devices is established, and the thermal and mechanical properties of the devices under three kinds of power cycle simulation conditions are studied. Metal elastoplastic model is used to simulate the transient characteristics of the material during the power cycle. The simulation results show that the edge of contact between the emitter surface of IGBT chip and the emitter molybdenum wafer is a stress concentration area, and there is obvious plastic deformation at the gate gap and around the edge corner of the emitter surface of the chip. At the same time, the simulation results are compared with the actual failure IGBT chip, which further verifies the validity and applicability of the simulation model.
【作者單位】： 華北電力大學(xué)新能源電力系統(tǒng)國(guó)家重點(diǎn)實(shí)驗(yàn)室;國(guó)家電網(wǎng)全球能源互聯(lián)網(wǎng)研究院;
【基金】：國(guó)家電網(wǎng)公司科技項(xiàng)目(5455GB160006)
【分類號(hào)】：TN322.8

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1 ;半導(dǎo)體超晶格的電子態(tài)與聲子模理論[J];中國(guó)科學(xué)基金;1994年02期

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