本文選題：SPIC + 隔離驅(qū)動(dòng)��； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：在電力能源日益緊張的今天,節(jié)能倍受關(guān)注,功率器件得到了廣泛應(yīng)用,得益于功率器件和集成電路制造工藝的快速發(fā)展,智能功率集成電路(SPIC)在照明、汽車(chē)電子、工業(yè)控制、航空航天設(shè)備等方面,憑借其高可靠性、低功耗、高穩(wěn)定性和小體積,有著功率組件和功率模塊無(wú)法替代的優(yōu)勢(shì),被廣泛應(yīng)用于各個(gè)領(lǐng)域。根據(jù)功率器件對(duì)柵極驅(qū)動(dòng)信號(hào)的要求,基于CSMC的1μm BCD工藝平臺(tái),設(shè)計(jì)了一種雙通道柵驅(qū)動(dòng)電路,高低端輸出信號(hào)間具有一定的死區(qū)時(shí)間,主要用于驅(qū)動(dòng)半橋連接的功率器件。該柵驅(qū)動(dòng)電路內(nèi)部集成了完善的監(jiān)測(cè)與保護(hù)功能,在電源出現(xiàn)欠壓或者功率器件電流過(guò)大時(shí),保護(hù)電路反饋回控制信號(hào),關(guān)斷高低端輸出信號(hào),在電壓恢復(fù)正常后,再正常輸出,在電流恢復(fù)正常后,經(jīng)過(guò)一定的恢復(fù)時(shí)間能正常輸出驅(qū)動(dòng)信號(hào)。本電路的特點(diǎn)為:兼容前級(jí)電路發(fā)出的電壓幅度為5 V或者3.3 V的控制信號(hào),內(nèi)部集成了磁隔離驅(qū)動(dòng)電路,不需要集成耐高壓的功率器件,相比其他的電平位移結(jié)構(gòu),有更低的功耗和更高的系統(tǒng)可靠性。本文的主要工作:具體分析了功率器件對(duì)柵極驅(qū)動(dòng)信號(hào)的要求,并基于此,設(shè)計(jì)了一種雙通道柵驅(qū)動(dòng)電路的整體框圖和具體指標(biāo)。針對(duì)電路總體框圖中的子模塊電路,做了功能介紹,并通過(guò)比較分析,采用合理的電路結(jié)構(gòu),設(shè)計(jì)了子模塊電路的電路圖,并進(jìn)行了仿真,對(duì)結(jié)果做了分析。在子模塊電路中,著重介紹了輸入級(jí)電路、監(jiān)測(cè)與保護(hù)電路和隔離驅(qū)動(dòng)電路。最后,給出了整體的仿真電路,并做了驅(qū)動(dòng)電路的整體仿真。
[Abstract]:Nowadays, energy conservation is becoming more and more concerned, and power devices have been widely used. Thanks to the rapid development of power devices and integrated circuit manufacturing technology, intelligent power integrated circuit (SPIC) has been used in lighting, automotive electronics, industrial control. Because of its high reliability, low power consumption, high stability and small volume, aerospace equipment has the irreplaceable advantages of power modules and power modules, and has been widely used in various fields. Based on the 1 渭 m BCD technology platform of CSMC, a two-channel gate drive circuit is designed according to the requirements of the power device for the gate drive signal. There is a dead time between the high and low output signals, which is mainly used to drive the half-bridge connected power device. The gate drive circuit is integrated with perfect monitoring and protection functions. When the power supply is undervoltage or the current of the power device is too large, the protection circuit feedback back the control signal, turn off the output signal at the high and low end, and after the voltage returns to normal, Normal output, after the current return to normal, after a certain recovery time can normally output the driving signal. The characteristic of the circuit is that it is compatible with the control signal of voltage amplitude of 5 V or 3.3 V sent out by the previous stage circuit, and the magnetic isolation drive circuit is integrated internally, which does not need to integrate the high voltage resistant power device, compared with the other level displacement structure, Lower power consumption and higher system reliability. The main work of this paper is as follows: the requirements of power devices for gate drive signal are analyzed in detail, and based on this, a block diagram and specific specifications of a two-channel gate drive circuit are designed. This paper introduces the function of the sub-module circuit in the overall block diagram of the circuit. Through comparison and analysis, the circuit diagram of the sub-module circuit is designed by adopting a reasonable circuit structure, and the simulation is carried out, and the result is analyzed. In the sub-module circuit, the input stage circuit, the monitoring and protection circuit and the isolation drive circuit are introduced. Finally, the whole simulation circuit is given, and the whole simulation of the driving circuit is done.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN402

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 ;Amantys加快在中國(guó)的發(fā)展[J];中國(guó)電子商情(基礎(chǔ)電子);2013年11期

2 ;高速柵極驅(qū)動(dòng)集成電路系列[J];電子制作;2005年11期

3 John Hargenrader;;應(yīng)用廣泛的車(chē)用柵極驅(qū)動(dòng)器[J];集成電路應(yīng)用;2013年05期

4 王志堅(jiān);;H橋IGBT柵極驅(qū)動(dòng)設(shè)計(jì)與應(yīng)用[J];太原科技;2009年01期

5 王瑞;;大功率IGBT柵極驅(qū)動(dòng)電路的研究[J];電氣自動(dòng)化;2014年03期

6 HenryE.Santana,冰;帶快速?gòu)?fù)位的光電隔離柵極驅(qū)動(dòng)[J];電子產(chǎn)品世界;1996年12期

7 李正中,孫德剛;高壓浮動(dòng)MOSFET柵極驅(qū)動(dòng)技術(shù)[J];通信電源技術(shù);2003年03期

8 ;安捷倫推出符合軍用標(biāo)準(zhǔn)的IGBT柵極光電耦合器[J];電子元器件應(yīng)用;2004年09期

9 ;MAX17075:高度集成升壓調(diào)節(jié)器[J];世界電子元器件;2009年06期

10 盛祖權(quán);張立;;IGBT模塊驅(qū)動(dòng)及保護(hù)技術(shù)[J];電力電子;2004年01期

相關(guān)重要報(bào)紙文章 前1條

1 記者 馬麗元 實(shí)習(xí)記者 唐燾逸;CISSOID與上海諾衛(wèi)卡簽訂經(jīng)銷(xiāo)協(xié)議 宣布正式進(jìn)軍中國(guó)市場(chǎng)[N];中國(guó)航空?qǐng)?bào);2014年

相關(guān)碩士學(xué)位論文 前4條

1 趙帥;一種雙通道柵極驅(qū)動(dòng)電路設(shè)計(jì)[D];電子科技大學(xué);2015年

2 王志軍;非晶硅集成柵極驅(qū)動(dòng)器在TFT-LCD中的應(yīng)用[D];上海交通大學(xué);2009年

3 陳永淑;IGBT的可靠性模型研究[D];重慶大學(xué);2010年

4 陳功;大功率IGBT串并聯(lián)技術(shù)研究[D];湖南大學(xué);2014年

，

本文編號(hào)：2051621