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CMOS毫米波壓控振蕩器的研究和設(shè)計(jì)

發(fā)布時(shí)間:2018-06-19 19:42

  本文選題:毫米波壓控振蕩器 + 寬頻帶; 參考:《杭州電子科技大學(xué)》2017年碩士論文


【摘要】:隨著無線通信技術(shù)的急速發(fā)展,尤其是5G計(jì)劃在不斷的推進(jìn),無線通信系統(tǒng)對帶寬的要求越來越高,這就使得毫米波頻段(30GHz~300GHz)可觀的頻譜資源愈發(fā)的具有吸引力。射頻收發(fā)系統(tǒng)是無線通信系統(tǒng)中不可或缺的一部分,對它的研究一直是毫米波頻段甚至是太赫茲頻段的主要內(nèi)容。壓控振蕩器(Voltage-controlled Oscillator,VCO)是雷達(dá)系統(tǒng)以及射頻收發(fā)系統(tǒng)中最為關(guān)鍵的一個(gè)模塊,得到了更加廣泛的關(guān)注。本文首先闡述了CMOS毫米波壓控振蕩器的意義,介紹了國內(nèi)外關(guān)于CMOS毫米波頻段壓控振蕩器的研究進(jìn)展,然后分析了壓控振蕩器的設(shè)計(jì)理論、實(shí)現(xiàn)方法和毫米波頻段VCO的性能要求。最后,基于CMOS工藝進(jìn)行毫米波VCO的設(shè)計(jì)。論文工作如下:1.對低相位噪聲壓控振蕩器的設(shè)計(jì)進(jìn)行了研究。在ADS仿真環(huán)境中,利用開口諧振環(huán)結(jié)構(gòu)設(shè)計(jì)電感,并在Cadence仿真環(huán)境中設(shè)計(jì)中心頻率為140GHz的VCO。與傳統(tǒng)螺旋電感相比,利用該結(jié)構(gòu)電感設(shè)計(jì)的壓控振蕩器的相位噪聲改進(jìn)1.1dBc/Hz。2.對寬頻帶壓控振蕩器的設(shè)計(jì)進(jìn)行了研究。在ADS仿真環(huán)境中,利用人工介電常數(shù)的概念并基于數(shù)字可控的差分傳輸線設(shè)計(jì)了感值可變的片上電感。通過理論分析并結(jié)合ADS仿真對數(shù)字可控差分傳輸線中各參數(shù)對感值的影響進(jìn)行分析和驗(yàn)證,并在Cadence仿真環(huán)境中利用GF65nm工藝進(jìn)行寬頻帶壓控振蕩器的設(shè)計(jì)。通過對電路的仿真數(shù)據(jù)進(jìn)行分析,實(shí)現(xiàn)了頻率調(diào)諧范圍約為6GHz(139.4GHz~145.3GHz)的寬頻帶壓控振蕩器。3.基于注入鎖定技術(shù)對正交壓控振蕩器展開了研究;谧⑷腈i定的分頻特性,利用兩個(gè)壓控振蕩器的二次諧波相互作為注入信號,實(shí)現(xiàn)兩個(gè)振蕩器的基波信號相位的正交。同時(shí)采用1/4?傳輸線增加振蕩器輸出二次諧波的振幅從而增加增加注入能量,提高注入鎖定產(chǎn)生正交信號的頻率范圍。在ADS中仿真優(yōu)化所需電感,在Cadence仿真環(huán)境中利用GF65nm工藝設(shè)計(jì)電路,仿真得出該電路的正交輸出頻率范圍為141.2GHz~144.8GHz,相位噪聲為-109.69dBc/Hz@10MHz,比單個(gè)壓控振蕩器的相位噪聲改進(jìn)1.75dBc/Hz。
[Abstract]:With the rapid development of wireless communication technology, especially the 5G plan, the bandwidth requirement of wireless communication system is becoming higher and higher, which makes the considerable spectrum resource of 30GHz / 300GHz in millimeter wave band more attractive. RF transceiver system is an indispensable part of wireless communication system. The research of RF transceiver is always the main content of millimeter wave band and even terahertz band. Voltage-controlled Oscillator VCO (VCO) is one of the most important modules in radar system and RF transceiver system. In this paper, the significance of CMOS millimeter-wave voltage-controlled oscillator is introduced, and the research progress of CMOS millimeter-wave VCO at home and abroad is introduced, and then the design theory of VCO is analyzed. Implementation method and performance requirements of millimeter wave band VCO. Finally, the design of millimeter wave VCO based on CMOS process is carried out. The work of the thesis is as follows: 1. The design of low phase noise voltage controlled oscillator is studied. In ads simulation environment, the open resonant ring structure is used to design the inductor, and the VCO with the center frequency of 140 GHz is designed in Cadence simulation environment. Compared with the traditional spiral inductor, the phase noise of the VCO designed by the inductor is improved by 1.1 dBc / Hz.2. The design of a wide band voltage controlled oscillator is studied. Based on the concept of artificial dielectric constant and digital controllable differential transmission line, an inductance with variable inductance is designed in ads simulation environment. Based on the theoretical analysis and the ads simulation, the influence of the parameters on the perceptual value in the digital controlled differential transmission line is analyzed and verified, and the broadband VCO is designed by using GF65nm process in Cadence simulation environment. By analyzing the simulation data of the circuit, a broadband voltage-controlled oscillator with a tunable frequency range of about 6GHz / 139.4GHz / 145.3GHz is realized. The orthogonal voltage controlled oscillator (OVCO) is studied based on injection locking technique. Based on the frequency-dividing characteristic of injection locking, the second harmonic of two voltage-controlled oscillators is used as the injection signal to realize the quadrature of the fundamental signal phase of the two oscillators. 1 / 4 at the same time? The transmission line increases the amplitude of the second harmonic output of the oscillator, thereby increasing the injection energy and increasing the frequency range of the quadrature signal generated by the injection lock. Using GF65nm technology to design circuit in Cadence simulation environment, the quadrature output frequency range of this circuit is 141.2GHz / 144.8 GHz, phase noise is -109.69dBc / Hz / Hz / Hzr @ 10MHz, which is 1.75dBc / Hz. Hz. which is better than the phase noise of a single voltage-controlled oscillator.
【學(xué)位授予單位】:杭州電子科技大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TN752

【參考文獻(xiàn)】

相關(guān)期刊論文 前5條

1 王志平;況立雪;陳磊;池保勇;;一種38.4~43.4 GHz CMOS壓控振蕩器[J];微電子學(xué);2016年03期

2 許亞蘭;江金光;劉江華;;Wide band low phase noise QVCO based on superharmonic injection locking[J];Journal of Semiconductors;2016年01期

3 成思s,

本文編號:2041045


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