本文選題：壓電半導(dǎo)體桿 + 解析解��； 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：壓電半導(dǎo)體是一種兼具壓電性和半導(dǎo)體特性雙重物理屬性的材料。在外力作用下,壓電半導(dǎo)體內(nèi)部產(chǎn)生的壓電勢(shì),它能對(duì)半導(dǎo)體特性進(jìn)行有效調(diào)控,這使壓電半導(dǎo)體材料在未來(lái)新型功能電子器件上有廣闊應(yīng)用前景。對(duì)壓電半導(dǎo)體材料的力學(xué)行為進(jìn)行理論研究,可為新型壓電半導(dǎo)體器件的創(chuàng)新開(kāi)發(fā)和結(jié)構(gòu)設(shè)計(jì)提供理論指導(dǎo)。為此,本文針對(duì)一維壓電半導(dǎo)體桿,開(kāi)展了如下三個(gè)方面的工作:一、針對(duì)兩端自由的一維壓電半導(dǎo)體桿,考慮電場(chǎng)和載流子的非線性耦合項(xiàng),導(dǎo)出了其自平衡狀態(tài)下的解析解。在自平衡狀態(tài)下,壓電半導(dǎo)體桿一側(cè)處于拉伸狀態(tài),另一側(cè)處于壓縮狀態(tài),桿內(nèi)的機(jī)械場(chǎng)、電場(chǎng)和載流子分布在桿的兩端區(qū)域變化十分劇烈,而在桿的中間區(qū)域變化比較平緩。二、針對(duì)兩端受軸向拉力的一維壓電半導(dǎo)體桿,把電流密度的非線性項(xiàng)進(jìn)行線性化處理,導(dǎo)出其在軸向拉力作用下的解析解,理論研究了一維壓電半導(dǎo)體桿在軸向拉力作用下的力學(xué)行為。壓電半導(dǎo)體桿內(nèi)的機(jī)械場(chǎng)、電場(chǎng)和載流子的分布在桿兩端區(qū)域變化劇烈,在桿中間區(qū)域變化則較小,并且桿內(nèi)的電場(chǎng)、電位移、應(yīng)變和位移都是關(guān)于桿的中點(diǎn)對(duì)稱(chēng)分布的。三、針對(duì)一端固定一端自由的一維壓電半導(dǎo)體桿,把漂移電流的非線性項(xiàng)進(jìn)行線性化處理,導(dǎo)出了其在自由端受剪力作用下的解析解,理論研究了一維壓電半導(dǎo)體彎曲變形的力學(xué)行為。桿內(nèi)電勢(shì)和載流子的分布為在桿的固定端附近區(qū)域變化較為劇烈,隨著遠(yuǎn)離固定端,電勢(shì)和載流子趨向于一個(gè)恒定值。
[Abstract]:Piezoelectric semiconductor is a kind of material with both piezoelectric and semiconductor properties. The piezoelectric potential produced by the piezoelectric semiconductor under external force can effectively regulate the characteristics of the semiconductor, which makes the piezoelectric semiconductor material have a broad application prospect in the future new functional electronic devices. The theoretical study on the mechanical behavior of piezoelectric semiconductor materials can provide theoretical guidance for the innovative development and structural design of new piezoelectric semiconductor devices. For this reason, this paper has carried out the following three aspects of work for one-dimensional piezoelectric semiconductor rod: first, considering the nonlinear coupling term of electric field and carrier for the one-dimensional piezoelectric semiconductor rod with free ends. The analytical solution in the state of self-equilibrium is derived. In the state of self-equilibrium, the piezoelectric semiconductor rod is in the state of tension on one side and compression on the other side. The mechanical field, electric field and carrier distribution in the two ends of the rod vary dramatically, but the change in the middle region of the rod is relatively gentle. Secondly, the nonlinear term of current density is linearized for one dimensional piezoelectric semiconductor rod with axial tension at both ends, and its analytical solution under axial tension is derived. The mechanical behavior of one-dimensional piezoelectric semiconductor rod under axial tension is studied theoretically. In the mechanical field of piezoelectric semiconductor rod, the distribution of electric field and carrier varies dramatically in the two ends of the rod, but in the middle of the rod, the variation is small, and the electric field, electric displacement, strain and displacement in the rod are all about the symmetrical distribution of the middle point of the rod. Thirdly, the nonlinear term of drift current is linearized for one dimensional piezoelectric semiconductor rod with one end fixed and one end free, and its analytical solution under shear force at the free end is derived. The mechanical behavior of one-dimensional piezoelectric semiconductor bending deformation is studied theoretically. The distribution of electric potential and carrier in the rod varies sharply near the fixed end of the rod. With the distance from the fixed end, the potential and carrier tend to a constant value.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：TN304.9

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本文編號(hào)：2040671