本文選題：PIN二極管 + GaN��； 參考：《南京理工大學(xué)》2015年碩士論文

【摘要】：微波開關(guān)是微波控制電路中的重要組成部分,廣泛應(yīng)用于雷達(dá)、衛(wèi)星、通信、電子對抗及測量等方面,其主要作用是控制信號的通斷或者完成信號在不同信道間的切換。隨著各類半導(dǎo)體晶體管的不斷發(fā)展,目前主要用于微波開關(guān)設(shè)計的控制器件有PIN二極管、GaN高電子遷移率晶體管(HEMT)等。本文應(yīng)用兩種不同管子的控制器件分別設(shè)計了單刀單擲(SPST)及單刀雙擲(SPDT) 開關(guān),插入損耗、隔離度及回波損耗等性能良好。本論文的主要工作如下：1、對基于PIN二極管的開關(guān)設(shè)計方法進(jìn)行了較為深入的研究,結(jié)合微帶電路、有源電路等理論,折中考慮串聯(lián)型和并聯(lián)型開關(guān)的優(yōu)缺點,最終選擇采用串-并結(jié)合型結(jié)構(gòu)來設(shè)計單刀單擲(SPST)開關(guān)以及適用于L波段T/R組件的單刀雙擲(SPDT)開關(guān)。加工并測試了基于PCB的開關(guān)電路,測試結(jié)果與仿真結(jié)果較為吻合,部分指標(biāo)有所惡化,但是總體滿足指標(biāo)要求,性能較好。2、以GaN工藝為設(shè)計平臺,研究了GaN HEMT管的基本特性,對其所構(gòu)成的開關(guān)電路進(jìn)行了基本原理分析,結(jié)合新穎的具有帶阻濾波性能的R-C-R電路結(jié)構(gòu)設(shè)計了基于Dual-gate GaN HEMT管的高隔離度開關(guān)單片,在63%的帶寬范圍內(nèi)隔離度均大于60 dB。3、在前面開關(guān)設(shè)計的基礎(chǔ)上,研究了多狀態(tài)阻抗匹配網(wǎng)絡(luò)的分析與設(shè)計。該結(jié)構(gòu)主要應(yīng)用于一分四功率分配器、四陣列天線等,用較少數(shù)量的開關(guān),實現(xiàn)在不同狀態(tài)下的阻抗匹配,電路結(jié)構(gòu)緊湊,易于實現(xiàn)。本論文提出的基于PIN二極管和GaN HEMT管的開關(guān)電路,插入損耗小、隔離度高、結(jié)構(gòu)緊湊、易于實現(xiàn),可以應(yīng)用于一些通訊和雷達(dá)系統(tǒng)中。
[Abstract]:Microwave switch is an important part of microwave control circuit. It is widely used in radar, satellite, communication, electronic countermeasure and measurement. Its main function is to control the signal on and off or to complete the signal switching between different channels. With the development of semiconductor transistors, the control devices mainly used in the design of microwave switches are PIN diodes, gan high electron mobility transistors (HEMTs) and so on. In this paper, two kinds of control devices of different tubes are used to design SPST and SPDTT switches respectively. The insertion loss, isolation and echo loss are good. The main work of this thesis is as follows: 1. The design method of switch based on PIN diode is studied deeply. Combining the theory of microstrip circuit and active circuit, the advantages and disadvantages of series switch and parallel switch are considered. Finally, a series-and-combination structure is adopted to design the SPST switch and the SPDTT switch which is suitable for L band T / R module. The PCB based switch circuit is fabricated and tested. The test results are in good agreement with the simulation results, and some indexes are deteriorated. However, the performance of GaN HEMT transistor is studied on the basis of gan process. The basic principle of the switch circuit is analyzed, and the high isolation switch monolithic based on Dual-gate gan HEMT transistor is designed in combination with a novel R-C-R circuit structure with bandstop filtering performance. The isolation is greater than 60dB.3in the bandwidth range of 63%. Based on the previous switch design, the analysis and design of the multi-state impedance matching network are studied. The structure is mainly used in one four power divider, four array antennas and so on. With a small number of switches, impedance matching in different states is realized. The circuit structure is compact and easy to realize. The switch circuit based on PIN diode and gan HEMT proposed in this paper has the advantages of low insertion loss, high isolation, compact structure and easy implementation. It can be used in some communication and radar systems.
【學(xué)位授予單位】：南京理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN015

【引證文獻(xiàn)】

相關(guān)會議論文 前1條

1 劉斐珂;文光俊;龐宏;金海炎;嚴(yán)中;;單片微波開關(guān)技術(shù)及研究進(jìn)展[A];中國通信學(xué)會第五屆學(xué)術(shù)年會論文集[C];2008年

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本文編號：2013151