本文選題：紅外探測(cè)器 + 數(shù)值模擬　； 參考：《中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院上海技術(shù)物理研究所)》2017年碩士論文

【摘要】：與其他光電倍增器件相比,雪崩光電二極管(APD)具有量子效率高、探測(cè)效率高、結(jié)構(gòu)穩(wěn)定、覆蓋波段廣、探測(cè)速率快等優(yōu)點(diǎn)。以APD為基礎(chǔ)制備的雪崩器件已經(jīng)在很多軍事以及民用領(lǐng)域中得到了廣泛應(yīng)用。隨著第三代紅外成像探測(cè)器概念的提出,研發(fā)具有低噪聲、低成本、高靈敏度、高溫工作的高性能雪崩器件已經(jīng)成為第三代紅外成像探測(cè)器發(fā)展的一個(gè)主要方向。目前APD面臨的主要問(wèn)題是暗電流較大,對(duì)器件的載流子輸運(yùn)以及光增益產(chǎn)生機(jī)制均缺乏了解,導(dǎo)致研發(fā)成本與周期均居高不下。有鑒于此,本文使用Sentaurus-TCAD成功對(duì)銦鎵砷以及碲鎘汞紅外雪崩光電二極管進(jìn)行了建模仿真,以理論分析為器件的制備提供理論指導(dǎo)與結(jié)構(gòu)優(yōu)化,旨在降低器件研制經(jīng)費(fèi)與時(shí)間,提高器件性能。具體研究?jī)?nèi)容包括:1.通過(guò)數(shù)值模擬的方法細(xì)化分析出了SAGCM InGaAs/InP APD器件暗電流的成分,結(jié)果表明SRH暗電流在各偏壓范圍下始終主導(dǎo)暗電流。對(duì)于InGaAs吸收層中復(fù)合中心對(duì)暗電流的影響的分析顯示器件的暗電流特性明顯受到復(fù)合中心濃度與位置的制約。對(duì)于少子壽命和暗電流之間的聯(lián)系進(jìn)行了分析,研究結(jié)果可用于在實(shí)際器件制備與測(cè)試中對(duì)器件的少子壽命進(jìn)行估算。2.通過(guò)數(shù)值模擬的方法對(duì)臺(tái)面結(jié)與平面結(jié)兩種結(jié)構(gòu)的HgCdTe APD綜合性能進(jìn)行了分析,結(jié)果表明其暗電流特性極大地受到內(nèi)建電場(chǎng)的影響。另外通過(guò)調(diào)整優(yōu)化倍增區(qū)厚度,可以影響到器件的暗電流和增益,應(yīng)當(dāng)根據(jù)具體的工作需求來(lái)選擇合適的結(jié)構(gòu)參數(shù)。最后對(duì)平面結(jié)結(jié)角處局域電場(chǎng)的分析表明,通過(guò)改善工藝來(lái)降低結(jié)角尖銳程度可以有效降低器件的暗電流。同時(shí)對(duì)與臺(tái)面結(jié)的分析表明,其暗電流特性極大地受到倍增區(qū)摻雜濃度的制約。研究結(jié)果可用于指導(dǎo)碲鎘汞APD器件結(jié)構(gòu)的設(shè)計(jì)和優(yōu)化。
[Abstract]:Compared with other photomultiplier devices, avalanche photodiode (APD) has the advantages of high quantum efficiency, high detection efficiency, stable structure, wide coverage and fast detection rate. The avalanche device based on APD has been widely used in many military and civil fields. With the concept of third generation infrared imaging detectors, the avalanche diode is widely used. It is proposed that the development of high performance avalanche devices with low noise, low cost, high sensitivity and high temperature has become a major direction for the development of the third generation infrared imaging detectors. The main problem facing APD is that the dark current is large, the carrier transport and the optical gain generation mechanism are lack of understanding, resulting in the cost of research and development and the cost of research and development. In view of this, the modeling and Simulation of indium and gallium arsenic and mercury cadmium telluride avalanche photodiode are successfully modeled by Sentaurus-TCAD. Theoretical analysis is used to provide theoretical guidance and structural optimization for the preparation of devices. The purpose is to reduce the cost and time of device development and improve the performance of the devices. The specific research contents include: 1. links. The dark current composition of the SAGCM InGaAs/InP APD device is refined and analyzed by the method of over numerical simulation. The result shows that the dark current of the SRH dark current dominates the dark current throughout the bias range. The analysis of the influence of the composite center on the dark current in the InGaAs absorption layer shows that the dark current characteristic of the device is obviously influenced by the concentration and position of the complex center. The relationship between the lifetime and the dark current is analyzed. The results can be used to estimate the lifetime of the devices in the actual device preparation and test. The HgCdTe APD comprehensive performance of the two structures of the table junction and the plane junction is analyzed by the numerical simulation method. The results show that the dark current characteristic is very great. In addition, by adjusting the thickness of the multiplier area, the dark current and gain of the device can be affected, and the appropriate structural parameters should be selected according to the specific work requirements. Finally, the analysis of the local electric field at the plane junction angle shows that the device can effectively reduce the device by improving the process to reduce the angle of the junction. The dark current analysis shows that the dark current characteristics are greatly restricted by the doping concentration in the multiplier region. The results can be used to guide the design and optimization of the structure of HgCdTe APD devices.
【學(xué)位授予單位】：中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院上海技術(shù)物理研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN215;TN312.7

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本文編號(hào)：2012245