本文選題：表面?zhèn)鲗?dǎo)電子發(fā)射 + 負(fù)電阻特性��； 參考：《西安工業(yè)大學(xué)》2015年碩士論文

【摘要】：表面?zhèn)鲗?dǎo)電子發(fā)射顯示器件(SED)在能耗、分辨率、視角等方面較其他平板顯示(LCD/PDP)存在明顯的優(yōu)勢(shì)。但是,表面?zhèn)鲗?dǎo)電子發(fā)射顯示器件的陰極電子發(fā)射陣列的發(fā)射效率以及壽命阻礙了其發(fā)展,并且有研究者發(fā)現(xiàn)表面?zhèn)鲗?dǎo)電子發(fā)射顯示器件在電形成時(shí),其傳導(dǎo)電流與器件電壓呈現(xiàn)重復(fù)的壓控負(fù)阻(VCNR)現(xiàn)象。而且VCNR與器件的發(fā)射電流存在某種聯(lián)系——不出現(xiàn)VCNR則沒(méi)有發(fā)射電流。因此,揭示VCNR的形成機(jī)理且理清VCNR現(xiàn)象與電子發(fā)射特性的內(nèi)在規(guī)律可以為制備出性能優(yōu)異的SED提供理論基礎(chǔ)。本文以顆粒膜AlN/Al作為表面?zhèn)鲗?dǎo)電子發(fā)射顯示器件的陰極發(fā)射極材料,通過(guò)真空電形成,研究VCNR特性及其形成機(jī)理。采用磁控濺射和光刻技術(shù)制備發(fā)射陰極為AlN/Al材料的表面?zhèn)鲗?dǎo)顯示原理器件,研究了電形成次數(shù)、顆粒膜制備工藝、器件結(jié)構(gòu)、電形成環(huán)境、外加電場(chǎng)以及顆粒膜材料成份等,對(duì)器件的電學(xué)特性影響,根據(jù)電學(xué)特性的演變規(guī)律,探討了顆粒膜的電子發(fā)射機(jī)理以及器件VCNR特性,主要獲得以下結(jié)論：研究了不同電形成環(huán)境對(duì)VCNR的影響。實(shí)驗(yàn)表明在低真空和高真空兩種不同真空環(huán)境下,給器件加載相同的電壓電形成所呈現(xiàn)的現(xiàn)象不相同。具體表現(xiàn)為在低真空下,器件的傳導(dǎo)電流達(dá)到電流源額定上限且VCNR現(xiàn)象不可重復(fù),傳導(dǎo)電流變化劇烈且在薄膜陰極形成一條遠(yuǎn)大于2μm的狹縫：在高真空下,器件傳導(dǎo)電流很穩(wěn)定且VCNR現(xiàn)象可重復(fù),并在薄膜表面形成一條狹縫且寬度為952nm。研究了不同外加電場(chǎng)模式下器件電學(xué)特性的影響,對(duì)以Al-AlN為陰極發(fā)射極薄膜的基底上的背電極分別加載不同電壓(-5V、0V、+5V)。研究其對(duì)電子發(fā)射效率的影響以及對(duì)VCNR現(xiàn)象的影響。實(shí)驗(yàn)發(fā)現(xiàn)加載-5V電壓時(shí),器件的VCNR現(xiàn)象較明顯,器件的發(fā)射電流和發(fā)射效率增加。相反加載+5V時(shí),器件的發(fā)射電流和發(fā)射效率下降。研究了不同器件結(jié)構(gòu)對(duì)電學(xué)特性的影響,即制備不同膜層結(jié)構(gòu)的器件1(先制備銅電極后制備發(fā)射陰極)、器件2(先制備發(fā)射陰極再制備銅電極)。實(shí)驗(yàn)表明器件1的傳導(dǎo)電流低于器件2,出現(xiàn)VCNR現(xiàn)象時(shí)對(duì)應(yīng)的器件電壓大于器件2,且傳導(dǎo)電流穩(wěn)定,形成的狹縫尺寸適合表面電子發(fā)射。研究了材料成份對(duì)器件電學(xué)特性的影響。在氣體流量N2：Ar為3:90sccm的前提下,利用磁控濺射設(shè)備分別在工作氣壓為0.85Pa和1Pa下,制備了兩種不同性質(zhì)的發(fā)射極薄膜(顆粒膜),然后在真空中進(jìn)行電形成。結(jié)果表明0.85Pa下制備的顆粒膜導(dǎo)電性良好,但是傳導(dǎo)電流比較大且電形成后狹縫大于2μm,且觀測(cè)不到發(fā)射電流。其出現(xiàn)了VCNR現(xiàn)象較1Pa的早許多(相對(duì)于器件電壓)。但是1Pa下制備的器件與其相反,傳導(dǎo)電流比較穩(wěn)定且形成的狹縫較為理想在2μm以內(nèi),出現(xiàn)了明顯的發(fā)射電流。利用掃描式電子顯微鏡X光微區(qū)分析(SEM-EDS)研究了電形成之后器件的顆粒膜元素含量的變化,結(jié)果發(fā)現(xiàn)器件顆粒膜電形成后,A1元素發(fā)生了改變且其含量增加了4.29%。結(jié)合以上不同條件下器件宏觀電學(xué)特性以及顆粒膜的變化,確定器件VCNR特性和器件顆粒膜中導(dǎo)電元素A1含量直接相關(guān)。
[Abstract]:The surface conduction electron emission display (SED) has obvious advantages over other flat panel display (LCD/PDP) in energy consumption, resolution, and angle of view. However, the emission efficiency and life of the cathode electron emission array of the surface conduction electronic emission display device have hindered its development, and some researchers found the surface conduction electron emission display. When the device is formed, the conduction current and the device voltage present a repetitive pressure controlled negative resistance (VCNR) phenomenon. And there is some connection between the VCNR and the emission current of the device - no VCNR does not appear. Therefore, it is possible to reveal the formation mechanism of the VCNR and to clear the inherent laws of the VCNR phenomenon and the electron emission characteristics. The different SED provides the theoretical basis. In this paper, the granular membrane AlN/Al is used as the cathode emitter material for the surface conduction electron emission display device. The characteristics and formation mechanism of the VCNR are studied by vacuum electricity formation. The surface conduction display principle of the cathode is prepared by magnetron sputtering and photolithography, and the electrical formation time is studied. The preparation technology of the granular film, the structure of the device, the electric forming environment, the external electric field and the material composition of the granular film, and the influence on the electrical characteristics of the device and the evolution of the electrical characteristics, the electronic emission mechanism of the granular film and the VCNR characteristics of the device are discussed. The main results are as follows: the influence of different electric forming environment on the VCNR is studied. The experimental results show that under low vacuum and high vacuum two different vacuum conditions, the phenomenon of the same voltage and electric formation is different. It is shown that under low vacuum, the conduction current of the device reaches the rated upper limit of the current source and the VCNR phenomenon is not repeatable, the conduction current changes violently and is far greater than the film cathode. The 2 m slit: under high vacuum, the conduction current of the device is very stable and the VCNR phenomenon can be repeated, and a slit on the surface of the film is formed and the width is 952nm.. The effects of the electrical characteristics of the devices under different applied electric field modes are studied. The different voltages (-5V, 0V, +5V) on the back electrodes on the substrate of the cathode emitter film with Al-AlN are respectively loaded. The effect on the electron emission efficiency and the effect on the VCNR phenomenon are studied. The experiment shows that when loading -5V voltage, the VCNR phenomenon of the device is more obvious, the emission current and the emission efficiency of the device are increased. On the contrary, the emission current and the emission efficiency of the device are decreased. The influence of different device structures on the electrical properties is studied, that is, the preparation is not prepared. The device 1 with the same layer structure (preparation of the cathode after preparing the copper electrode), device 2 (first preparing the cathode for the emission cathode preparation). The experiment shows that the conduction current of the device 1 is lower than that of the device 2. The voltage of the device corresponding to the VCNR phenomenon is greater than the device 2, and the conduction current is stable, and the size of the slit is suitable for the surface electron emission. Under the condition of gas flow N2:Ar of 3:90sccm, two kinds of emitter films (particle films) with different properties were prepared under the condition of the gas flow rate of 0.85Pa and 1Pa, and the electric formation was then formed in the vacuum. The results showed that the electrical conductivity of the granular films prepared under 0.85Pa was good, but the results showed that the electrical conductivity of the films was good, but the results showed that the electrical conductivity of the film prepared under 0.85Pa was good. It is that the conduction current is larger and the electric current is more than 2 mu m, and the emission current is not observed. It appears that the VCNR phenomenon is much earlier than the 1Pa (relative to the device voltage). But the device prepared under the 1Pa is opposite, the conduction current is more stable and the slit is less than 2 mu m, and the obvious emission current appears. X optical microanalysis (SEM-EDS) is used to study the changes in the content of the elements in the particles after the electrical formation. The results show that the A1 element changes after the formation of the particle membrane of the device and its content increases the macroscopic electrical properties of the devices and the change of the granular film under the different conditions of the 4.29%. binding. The VCNR characteristics of the device are determined and the characteristics of the device are determined. The content of conductive element A1 in granular film is directly related.
【學(xué)位授予單位】：西安工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN141

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本文編號(hào)：2008371