本文選題：毫米波單片集成電路 + 240GHz倍頻器�。� 參考：《杭州電子科技大學(xué)》2017年碩士論文

【摘要】：智能終端的普及和移動數(shù)據(jù)的快速增長造成了全球性的頻譜不足,使得無線服務(wù)提供商面臨前所未有的挑戰(zhàn)。毫米波技術(shù)被認(rèn)為是不斷滿足消費者對不斷增長的無線數(shù)據(jù)容量需求的關(guān)鍵技術(shù),同時,先進的硅基工藝使得在毫米波波段實現(xiàn)收發(fā)機的全集成成為可能。100GHz以上的系統(tǒng)可以應(yīng)用在通信、遙感、毫米波成像以及行星輻射探測等領(lǐng)域,存在的一個主要挑戰(zhàn)是缺少相對便宜的純凈的信號源。目前業(yè)界在高頻振蕩器上已經(jīng)開展了一些研究,但低頻振蕩器加倍頻器的方案因其具有較好的頻率穩(wěn)定性和相位噪聲,仍是一種常用的方法。此外,功率放大器是僅剩的幾個未能成功實現(xiàn)集成的電路,它的功能是在信號發(fā)射到空氣中之前放大信號到所需的功率水平,由于硅基工藝特定的限制,設(shè)計高線性度和效率的功率放大器仍是一項挑戰(zhàn)性的工作。本論文主要工作是開展240GHz倍頻器和140GHz功率放大器的技術(shù)研究并完成電路設(shè)計。1.介紹了毫米波技術(shù)的特點和研究方法,總結(jié)了D波段功率放大器和倍頻器的技術(shù)指標(biāo)以及拓?fù)浣Y(jié)構(gòu)。論文介紹了硅基集成電路中的器件和功率放大器的主要技術(shù)指標(biāo),并對提高功率放大器帶寬、增益、輸出功率以及線性度和效率的方法進行了詳細(xì)的闡述。同時,簡要介紹了倍頻器的主要技術(shù)指標(biāo)以及性能改善技術(shù)。2.基于0.13 SiGe BiCMOS工藝完成了240GHz倍頻器的設(shè)計和仿真。240GHz的倍頻器由120GHz的功率放大器和240GHz的二倍頻器兩個子模塊構(gòu)成。120GHz的功率放大器是由4級共射級結(jié)構(gòu)級聯(lián)組成的單端功率放大器。仿真結(jié)果表明,單端的功率放大器在120GHz處的小信號增益為21.97,3帶寬為24GHz(98-122GHz),飽和輸出功率為7.04,功率附加效率為7.5%,輸出1壓縮點為3.87,直流功耗為55.68。二倍頻器是經(jīng)典的push-push結(jié)構(gòu)。仿真結(jié)果表明,二倍頻器的最大輸出功率為3.84,最大增益為-4.76,直流功耗為35。240GHz的倍頻器實現(xiàn)了10的功率增益,0的輸出功率。3.完成了兩款基于65nm CMOS工藝的140GHz功率放大器的設(shè)計。第一款功率放大器采用三級全差分結(jié)構(gòu),前兩級為共源結(jié)構(gòu),最后一級為共源共柵結(jié)構(gòu)。仿真結(jié)果表明,該功率放大器在140GHz處的小信號增益為17.5,3帶寬為25GHz(130-155GHz),飽和輸出功率為7.9,輸出1壓縮點為5.2,功率附加效率為7.5%,直流功耗為80。第二款功率放大器采用四級全差分結(jié)構(gòu),四級全為共源結(jié)構(gòu)。仿真結(jié)果表明,該功率放大器在140GHz處的小信號增益為16.8,3帶寬為17GHz(136-153GHz),飽和輸出功率為11.3,輸出1壓縮點為6.55,功率附加效率為4%,直流功耗為160。提出了兩種對功率放大器結(jié)構(gòu)的改進技術(shù),可用于提高功率放大器的增益、輸出功率和效率。本論文對于毫米波倍頻器和功率放大器的設(shè)計方法作了較為詳細(xì)的分析和總結(jié)�；�0.13 SiGe Bi CMOS工藝設(shè)計了240GHz倍頻器,基于65nm CMOS工藝設(shè)計了兩款140GHz功率放大器。論文設(shè)計的倍頻器和功率放大器電路均達(dá)到了要求的性能指標(biāo)。
[Abstract]:The popularity of intelligent terminals and the rapid growth of mobile data have resulted in the global spectrum shortage, which makes wireless service providers face unprecedented challenges. Millimeter wave technology is considered to be the key technology to satisfy consumers' demand for increasing wireless data capacity. In the same time, advanced silicon based technology makes the millimeter wave segment. The full integration of the transceiver has become a possible system that can be applied to communications, remote sensing, millimeter wave imaging and planetary radiation detection. One of the main challenges is the lack of relatively cheap pure signal sources. At present, some research has been carried out on high frequency oscillators in the industry, but the frequency doubling of low frequency oscillators has been carried out in the industry. The scheme is still a common method because of its good frequency stability and phase noise. In addition, the power amplifier is the only one left unsuccessfully integrated circuit, its function is to amplify the signal before the signal is launched into the air to the required level of power, and to design a high line due to the specific limitation of the silicon based process. The power amplifier of sex and efficiency is still a challenging work. The main work of this paper is to carry out the technical research of the 240GHz frequency doubler and the 140GHz power amplifier and complete the circuit design..1. introduces the characteristics and research methods of the millimeter wave technology, and summarizes the technical indexes and topology of the D band power amplifier and frequency doubler. The main technical indexes of devices and power amplifiers in silicon based integrated circuits are introduced, and the methods to improve the bandwidth, gain, output power, linearity and efficiency of the power amplifier are described in detail. At the same time, the main technical standard of the frequency doubler and the performance improvement technology.2. based on 0.13 SiGe BiCMOS are briefly introduced. The process completes the design and Simulation of the 240GHz frequency doubler. The frequency doubler of.240GHz consists of a 120GHz power amplifier and two sub modules of the two frequency doubler of 240GHz. The power amplifier of the.120GHz is a single end power amplifier composed of cascade 4 common fire stage structures. The simulation results show that the single end power amplifier is small signal gain at 120GHz With the 21.97,3 bandwidth of 24GHz (98-122GHz), the saturation output power is 7.04, the power added efficiency is 7.5%, the output 1 compression point is 3.87, the DC power consumption is 55.68. two frequency doubler is the classic push-push structure. The simulation results show that the maximum output power of the two frequency doubler is 3.84, the maximum gain is -4.76, the DC power consumption of 35.240GHz doubler is realized. 10 power gain, 0 output power.3. completed the design of two 140GHz power amplifiers based on the 65nm CMOS process. The first power amplifier uses a three stage full differential structure, the first two is the common source structure and the last stage is a common source common grid structure. The simulation results show that the small signal gain of the power amplifier at 140GHz is 17.5,3 band. The width is 25GHz (130-155GHz), the saturation output power is 7.9, the output 1 compression point is 5.2, the power added efficiency is 7.5%, the DC power consumption is 80. second power amplifiers with four full differential structure, and the four level is all common source. The simulation results show that the small signal gain of the power amplifier at 140GHz is 17GHz (136-153GHz), and is full of 17GHz (136-153GHz). The output power is 11.3, the output 1 compression point is 6.55, the power added efficiency is 4%, the DC power is 160., and two kinds of improved power amplifier structure are proposed, which can be used to improve the gain, output power and efficiency of the power amplifier. Analysis and summary. Based on 0.13 SiGe Bi CMOS process, the 240GHz frequency doubler is designed, and two 140GHz power amplifiers are designed based on 65nm CMOS process. The frequency doubler and power amplifier circuit designed in this paper have achieved the required performance indicators.
【學(xué)位授予單位】：杭州電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN722.75;TN771

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本文編號：2004302